Gallium Nitride as an Electromechanical Material

Rais‐Zadeh, Mina; Gokhale, Vikrant J.; Ansari, Azadeh; Faucher, M.; Théron, Didier; Cordier, Y.; Buchaillot, L.

doi:10.1109/jmems.2014.2352617

Cited by 190 publications

(79 citation statements)

References 122 publications

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“…While early work has been published on AlGaN films for acoustic resonators, those results may have been limited by the fabrication processes [248][249][250] or material quality. [251] Recently, simulations of AlN acoustic resonators using undoped PVD AlN and undoped MOCVD-AlN predicted significant benefits of using highly oriented, single-crystal AlN films with high e 33 .…”

Section: Electromechanical Filtersmentioning

confidence: 99%

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Tsao

Chowdhury

Hollis

et al. 2017

Adv Elect Materials

965

463

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Section: Electromechanical Filtersmentioning

confidence: 99%

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Tsao

Chowdhury

Hollis

et al. 2017

Adv Elect Materials

965

463

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“…The acoustic FP resonators are patterned from Gallium Nitride (GaN) (0001) epitaxially grown on c-plane sapphire substrate [24]. GaN is a piezoelectric material with low mechanical damping [25]. Due to its lower acoustic shear velocity than that of the sapphire substrate, the acoustic waves can be guided by the GaN layer, where an acoustic cavity can be further formed by lateral confinement through a pair of PnC acoustic mirrors, schematically shown in Fig.…”

Section: Designmentioning

confidence: 99%

High quality factor surface Fabry-Perot cavity of acoustic waves

Zou

et al. 2018

Applied Physics Letters

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Surface acoustic wave (SAW) resonators are critical components in wireless communications and many sensing applications. They have also recently emerged as subject of study in quantum acoustics at the single phonon level. Acoustic loss reduction and mode confinement are key performance factors in SAW resonators. Here we report the design and experimental realization of a high quality factor Fabry-Perot SAW resonators formed in between tapered phononic crystal mirrors patterned on a GaN-on-sapphire material platform . The fabricated SAW resonators are characterized by both electrical network analyzer and optical heterodyne vibrometer. We observed standing Rayleigh wave inside the cavity, with an intrinsic quality factor exceeding 1.3 × 10 4 at ambient conditions.

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“…The heat powers from the gate areas pass through the GaN channel, the SiC substrate, and the AuSn preform finally reach the metallic carrier. Due to the inverse relationship between the thermal conductivity and the doping density in a semiconductor, thermal conductivity of GaN at room temperature (273 K) varies in the range of 100‐250 W/m K depending on doping type and density . Also, the thermal conductivity ( k ) of semiconductors decreases by temperature, so that the thermal conductivity of GaN, which is 150 W/m K at room temperature, can decrease to 59 W/m K at 573 K (Equation ).…”

Section: Thermal Analysis Of the Conventionally Assembled Transistormentioning

confidence: 99%

Thermal analysis of microwave GaN-HEMTs in conventional and flip-chip assemblies

Feghhi

Joodaki

2018

Int J RF Microw Comput Aided Eng

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Temperature rising which originates from self‐heating degrades the electrical characteristics, reliability, and lifetime of high‐power GaN‐HEMTs. In this article, a systematic analytical approach for thermal evaluation of microwave GaN‐HEMTs is constructed through combining and scrutinizing some of the basic static thermal analysis methods to provide a deeper insight into the process of the channel temperature rising and self‐heating with a much lower computational burden. The proposed systematic thermal analysis has been applied to two different assembly methods: conventional mounting and flip‐chip mounting. Although the mathematical and empirical equations used are simple enough to save time, the effects of several phenomena and different conditions on the channel temperature have been taken into account. These include heat crowding phenomenon, the effect of temperature‐dependent thermal conductivity of the transistor constituent materials, transistor geometry, die‐attach material properties, and bump dimensions. To validate the accuracy of the calculations, all the analytical analyses are followed by 3D thermal simulations in ANSYS software. The simulation results confirm the accuracy of the analytical calculations.

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Gallium Nitride as an Electromechanical Material

Cited by 190 publications

References 122 publications

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

High quality factor surface Fabry-Perot cavity of acoustic waves

Thermal analysis of microwave GaN-HEMTs in conventional and flip-chip assemblies

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