Gallium‐Induced Perturbation of Zinc Selenide Quantum Dots Electronics

Abstract

A rare cationic chemistry of GaIII has been used to modulate the optical and electrochemical properties of selenide quantum dots. Three different types of 3‐mercaptopropionic acid (3MPA)‐capped quantum dots (ZnSe‐3MPA, Ga2Se3‐3MPA and Ga‐doped ZnSe‐3MPA) were synthesized in highly basic aqueous media (pH = 12.12) at room temperature. Three‐dimensional emission‐excitation matrix spectra (3D EEM), as well as, the ultraviolet visible spectroscopic bands of the Ga‐doped ZnSe‐3MPA were similar to the average values obtained for ZnSe‐3MPA and Ga2Se3‐3MPA. Electrochemical studies revealed that gallium‐induced vacancies caused a significant enhancement in the conductivity of the Ga‐doped ZnSe‐3MPA compared to the conductivity of a mixture of ZnSe‐3MPA and Ga2Se3‐3MPA.