Gallium antimonide device related properties

Milnes, A. G.; Polyakov, A. Y.

doi:10.1016/0038-1101(93)90002-8

Cited by 206 publications

(71 citation statements)

References 114 publications

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“…1 Promising device structures such as avalanche photodiodes ͑APD͒ with a high ratio of the ionization coefficients of holes and electrons have been demonstrated by earlier workers. 2 Until now, a majority of the p-n junction devices have been fabricated by epitaxial growth techniques.…”

mentioning

confidence: 99%

“…EBIC measurements with metal on p-GaSb structures could not have been performed due to Fermi level pinning close to the valence band edge. 1 This results in low barrier heights of metal on p-GaSb and therefore low efficiency of excess charge carriers separation. However, if as in other materials, IM causes local p-to n-type conversion, EBIC measurements should be possible.…”

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confidence: 99%

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p- to n-type conversion in GaSb by ion beam milling

Panin

Dutta

Piqueras

et al. 1995

Applied Physics Letters

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Inversion in conductivity type of GaSb from p- to n- has been observed as a result of argon ion beam milling. Electron beam induced current (EBIC) measurements have been employed for detecting the type conversion. Enhancement in the luminescence intensity is seen after ion beam treatment. The type conversion is proposed to occur due to a combined effect of generation of native donors and gettering of native acceptors originally present in the as-grown samples.

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confidence: 99%

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confidence: 99%

p- to n-type conversion in GaSb by ion beam milling

Panin

Dutta

Piqueras

et al. 1995

Applied Physics Letters

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“…Consequently, they became promising candidates for applications in long wavelength lasers and photodetectors for fibre optic communication systems [1]. However, due to free-carrier absorption, undoped-GaSb substrates have a strong absorption in the IR wavelength region of interest which is difficult to eliminaten [2].…”

Section: Introductionmentioning

confidence: 99%

The Effect of Growth Temperature and V/III Flux Ratio of MOCVD Antimony Based Semiconductors on Growth Rate and Surface Morphology

2017

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Abstract. Epitaxial Al Ga Sb x 1xlayers on GaSb and GaAs substrates have been grown by atmospheric pressure metalorganic chemical vapor deposition using TMAl, TMGa and TMSb. Nomarski microscope and a profiler were employed to examine the surface morphology and growth rate of the samples. We report the effect of growth temperature and V/III flux ratio on growth rate and surface morphology. Growth temperatures in the range of 520qC and 680qC and V/III ratios from 1 to 5 have been investigated. A growth rate activation energy of 0.73 eV was found. At low growth temperatures between 520 and 540qC, the surface morphology is poor due to antimonide precipitates associated with incomplete decomposition of the TMSb. For layers grown on GaAs at 580qC and 600qC with a V/III ratio of 3 a high quality surface morphology is typical, with a mirror-like surface and good composition control. It was found that a suitable growth temperature and V/III flux ratio was beneficial for producing good AlGaSb layers. Undoped AlGaSb grown at 580oC with a V/III flux ratio of 3 at the rate of 3.5 μm/hour shows p-type conductivity with smooth surface morphology.

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“…Recently, we have been investigating the applicability of various surface passivation methods to GaSb, 5,6 a III-V compound semiconductor that is gaining importance. 7 A previous investigation on hydrogenation of GaSb by a rf plasma technique has already demonstrated the existence of a surface defect layer. 8 By slow chemical etching, it has been found possible to remove this defect layer.…”

Section: Introductionmentioning

confidence: 99%

Passivation of surface and bulk defects in p -GaSb by hydrogenated amorphous silicon treatment

Dutta

Sreedhar

Bhat

et al. 1996

Journal of Applied Physics

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Passivation of point and extended defects in GaSb has been observed as a result of hydrogenated amorphous silicon ͑a-Si:H͒ treatment by the glow discharge technique. Cathodoluminescence ͑CL͒ images recorded at various depths in the samples clearly show passivation of defects on the surface as well as in the bulk region. The passivation of various recombination centers in the bulk is attributed to the formation of hydrogen-impurity complexes by diffusion of hydrogen ions from the plasma. a-Si:H acts as a protective cap layer and prevents surface degradation which is usually encountered by bare exposure to hydrogen plasma. An enhancement in luminescence intensity up to 20 times is seen due to the passivation of nonradiative recombination centers. The passivation efficiency is found to improve with an increase in a-Si:H deposition temperature. The relative passivation efficiency of donors and acceptors by hydrogen in undoped and Te-compensated p-GaSb has been evaluated by CL and by the temperature dependence of photoluminescence intensities. Most notably, effective passivation of minority dopants in tellurium compensated p-GaSb is evidenced for the first time.

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Gallium antimonide device related properties

Cited by 206 publications

References 114 publications

p- to n-type conversion in GaSb by ion beam milling

p- to n-type conversion in GaSb by ion beam milling

The Effect of Growth Temperature and V/III Flux Ratio of MOCVD Antimony Based Semiconductors on Growth Rate and Surface Morphology

Passivation of surface and bulk defects in p -GaSb by hydrogenated amorphous silicon treatment

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