2020
DOI: 10.1016/j.optcom.2020.126166
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Gain spectral narrowing of semiconductor laser based on dual-core vertical coupler structure

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“…In 2019, Stefanos et al in the TU/e [79] used MRR as an internal cavity to improve the wavelength selectivity and achieved a InP-based monolithic integration laser with a linewidth of 63 kHz. Our team have adopted a dual-core vertical coupling structure to compensate for the loss in the passive waveguide [80] , meanwhile, amplified spontaneous emission noise can be filtered due to their gain narrowing phenomenon [81] . Based on this and our proposed structure, kHz-level monolithic integrated narrow linewidth semiconductor lasers are expected [82,83] .…”
Section: Summary and Prospectmentioning
confidence: 99%
“…In 2019, Stefanos et al in the TU/e [79] used MRR as an internal cavity to improve the wavelength selectivity and achieved a InP-based monolithic integration laser with a linewidth of 63 kHz. Our team have adopted a dual-core vertical coupling structure to compensate for the loss in the passive waveguide [80] , meanwhile, amplified spontaneous emission noise can be filtered due to their gain narrowing phenomenon [81] . Based on this and our proposed structure, kHz-level monolithic integrated narrow linewidth semiconductor lasers are expected [82,83] .…”
Section: Summary and Prospectmentioning
confidence: 99%