Gain of a heterojunction bipolar phototransistor

Chand, Naresh; Houston, P.A.; Robson, P.N.

doi:10.1109/t-ed.1985.21988

Cited by 70 publications

(33 citation statements)

References 17 publications

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“…13͑b͒. Chand et al 4 have shown, using models, that the current gain and photosensitivity in an HPT increases with the depletion layer thickness.…”

Section: Sicl Intensity and Ebic As A Function Of External Biasmentioning

confidence: 99%

“…[1][2][3][4] The optimum HPT design, in order to achieve high photosensitivity with low dark current, requires that the absorption of light in the emitter and the base regions be minimized, 4 thereby requiring the insertion of lower band gap absorption layers in the collector region. 5 Due largely to the transparent nature of GaAs substrate and the maturity of GaAs-based epitaxial growth techniques, the InGaAs/AlGaAs/GaAs-based system, in which InGaAs/GaAs layers form the absorption region in the collector and AlGaAs/GaAs acts as the emitter-base heterojunction, is a leading candidate for HPTs that can be vertically integrated into parallel optical systems.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Influence of structural defects on carrier recombination and current gain in an InGaAs/AlGaAs/GaAs heterojunction phototransistor

Lin

Rich

Sjolund

et al. 1996

Journal of Applied Physics

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P-type interface charge control layers for enabling GaN/SiC separate absorption and multiplication avalanche photodiodes Appl. Phys. Lett. 101, 093506 (2012) Recent improvements of the JET lithium beam diagnostic Rev. Sci. Instrum. 83, 10D533 (2012) Bulk and interfacial deep levels observed in In0.53Ga0.47As/GaAs0.5Sb0.5 multiple quantum well photodiodeWe have studied the influence of structural defects on the spatial variation of radiative and nonradiative recombination in an InGaAs/AlGaAs/GaAs resonant cavity enhanced npn heterojunction phototransistor ͑HPT͒ structure using cathodoluminescence ͑CL͒ and electron beam-induced current ͑EBIC͒ imaging. Absorber layers of InGaAs/GaAs multiple quantum wells ͑MQWs͒ are used to provide the photosensitivity for light with wavelengths that are transparent to the GaAs substrate. The current gain of the HPT under an applied bias voltage depends on the hole accumulation efficiency in the base and therefore on the hole lifetime. Strain relaxation-induced misfit dislocations in the MQWs are found to create regions of enhanced nonradiative recombination thereby reducing locally the hole accumulation efficiency and current gain. The reduction in the local EBIC signal caused by the dark line defects is less than ϳ20%, suggesting that misfit dislocations in this sample have a relatively small impact on overall device performance. EBIC and CL are found to be excellent complementary probes of the hole accumulation efficiency and relative recombination rates, owing to the high spatial resolution ͑ϳ1 m͒ of excitation of the electron beam used in these techniques. The temperature dependence of the EBIC and spectrally integrated CL images is examined for 85рTр300 K, and reveals that nonradiative recombination in the vicinity of misfit dislocations is predominantly thermally activated with observed spatial variations in lifetime and activation energy.

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“…13͑b͒. Chand et al 4 have shown, using models, that the current gain and photosensitivity in an HPT increases with the depletion layer thickness.…”

Section: Sicl Intensity and Ebic As A Function Of External Biasmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Influence of structural defects on carrier recombination and current gain in an InGaAs/AlGaAs/GaAs heterojunction phototransistor

Lin

Rich

Sjolund

et al. 1996

Journal of Applied Physics

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“…One of the first multibarrier structures with internal photocurrent gain is a bipolar phototransistor (Campbell, 1982). A phototransistor can have high gain through the internal bipolar-transistor action, which was significantly improved by utilizing a wide-gap emitter (Chand et al, 1985), or by utilizing punch-through transistors (Esener & Lee, 1985). It should be noted that the inherent to transistors large areas degrades their high-frequency performance.…”

Section: An Overview Of Multibarrier Photodiode Structuresmentioning

confidence: 99%

Physical Principles of Photocurrent Generation in Multi-Barrier Punch-Through-Structures

Каримов¹,

Yodgorova²,

Abdulkhaev³

2011

Photodiodes - World Activities in 2011

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“…For calculation of I ph , the recombination should also be taken into account along with the flux absorption nonlinearities discussed above. For the subcollector, the primary photogenerated current can be written as [2] , e 1 1 …”

Section: Absorption Model For Phototransistorsmentioning

confidence: 99%

Spectral Response Modelling of Heterojunction Phototransistors for Short Wavelength Transmission

Khan

Rezazadeh

Subramaniam

2008

2008 European Microwave Integrated Circuit Conference

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An accurate spectral response model for phototransistors has been proposed. The model is based on the calculation of photogenerated carriers through absorption in base, collector and sub-collector regions of phototransistor. Absorption pattern in AlGaAs/GaAs heterojunction phototransistors has been analysed and discussed using the proposed model. Collection efficiency, being strictly a geometry and wavelength dependent parameter, is not considered unity unlike all the precedents and its importance is highlighted. With the aid of the absorption model, absolute responsivity of a phototransistor is predicted for the first time. Power absorption profile and quantum efficiency have also been modelled. The analysis is performed for short wavelength transmission and the measurements corroborate the simulated results.

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Gain of a heterojunction bipolar phototransistor

Cited by 70 publications

References 17 publications

Influence of structural defects on carrier recombination and current gain in an InGaAs/AlGaAs/GaAs heterojunction phototransistor

Influence of structural defects on carrier recombination and current gain in an InGaAs/AlGaAs/GaAs heterojunction phototransistor

Physical Principles of Photocurrent Generation in Multi-Barrier Punch-Through-Structures

Spectral Response Modelling of Heterojunction Phototransistors for Short Wavelength Transmission

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