Gain in 1.3 μm materials: InGaNAs and InGaPAs semiconductor quantum-well lasers

Hader, J.; Koch, S. W.; Moloney, Jerome V.; O’Reilly, Eoin P.

doi:10.1063/1.127067

Cited by 65 publications

(38 citation statements)

References 18 publications

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“…21 The maximum net gain of GeOI is $2500 cm À1 at k ¼ 1593 nm, comparable to III-V semiconductor QWs under a similar injection level of Dn $ 1 Â 10 19 cm À3 . 22 In addition to the optical gain at 1580-1605 nm, the optical bleaching spans from 1530 to 1605 nm, as shown in Fig. 2(b).…”

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confidence: 96%

Large inherent optical gain from the direct gap transition of Ge thin films

Wang

Kimerling

Michel

et al. 2013

Applied Physics Letters

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The recent demonstration of Ge-on-Si diode lasers renews the interest in the unique carrier dynamics of Ge involving both direct (Γ) and indirect (L) valleys. Here, we report a large inherent direct gap optical gain ≥1300 cm−1 at room temperature from both tensile-strained n+ Ge-on-Si films and intrinsic Ge-on-insulator using femtosecond transmittance spectroscopy captured before direct-to-indirect valley scattering. This inherent direct gap gain is comparable to III-V semiconductors. For n+ Ge, this transient gain is ∼25× larger than its steady state gain, suggesting that reducing Γ→L or enhancing L→Γ intervalley scattering may significantly increase the optical gain of Ge lasers.

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confidence: 96%

Large inherent optical gain from the direct gap transition of Ge thin films

Wang

Kimerling

Michel

et al. 2013

Applied Physics Letters

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“…[1][2][3][4][5][6][7][8] Compared with InGaAsP lasers at the same emission wavelength, GaInNAs lasers have the smaller temperature sensitivity of threshold current, and hence, higher characteristic temperature T 0 as predicted theoretically. 1,9 However, the recent reports show that the defect-related nonradiative recombination is still severe in this material 10 due to the difficulty in the growth of highquality nitride compounds.…”

Section: H Riechertmentioning

confidence: 87%

“…Figure 1 shows the measured pressure dependence of lasing energy, E lase , in GaInNAs together with the theoretical expectation of the ⌫ minimum, in GaInAs, and the nitrogen level. 2,3 The GaInAs has the same In content as GaInNAs studied. It is shown that as pressure increases the ⌫ minimum increases relatively rapidly while the N level increases a bit slowly.…”

Section: H Riechertmentioning

confidence: 99%

Unusual increase of the Auger recombination current in 1.3 μm GaInNAs quantum-well lasers under high pressure

Jin

Sweeney

Tomić

et al. 2003

Applied Physics Letters

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Single-mode quantum cascade lasers employing asymmetric Mach-Zehnder interferometer type cavities Appl. Phys. Lett. 101, 161115 (2012) Bistability patterns and nonlinear switching with very high contrast ratio in a 1550nm quantum dash semiconductor laser Appl. Phys. Lett. 101, 161117 (2012) Relative intensity noise of a quantum well transistor laser Appl. Phys. Lett. 101, 151118 (2012) Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate Appl. Phys. Lett. 101, 151113 (2012) Ground state terahertz quantum cascade lasers

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“…Within the band anti-crossing model, although there is no direct coupling between the nitrogen band and the valence bands, there is an indirect interaction through the coupling with the conduction band [10][11][12] . A 10x10 effective mass Hamiltonian is used for energy band structure calculations of an InGaNAs/GaAs QW including the conduction-valence interaction with the spin degenerate nitrogen band.…”

Section: Theoretical Modelmentioning

confidence: 99%

Linewidth enhancement factor and modulation bandwidth of lattice-matched 1.5 micron InGaAsN/GaAs quantum well lasers

et al. 2004

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The linewidth enhancement factors of lattice-matched 1.5 µm wavelength InGaNAs/GaAs and InGaAs/InP singlequantum-well structures have been calculated using microscopic theory including many-body effects and a 10x10 effective-mass Hamiltonian. For applications which require high gain and carrier densities, InGaNAs/GaAs quantum wells have a much lower linewidth enhancement factor over a temperature range 300-400 K than InGaAs. The linewidth enhancement factor of InGaNAs is almost independent of both carrier density and temperature compared with InGaAs. The small-signal modulation characteristics of these 1.5µm lattice-matched structures and their temperature dependence have also been calculated. It is found that the maximum bandwidth of the InGaNAs/GaAs quantum well lasers is about 2.3 times larger than that of the InGaAs/InP quantum well lasers due to the high differential gain. The slope efficiency for the 3dB bandwidth as a function of optical density is twice as large for InGaNAs/GaAs as for InGaAs/InP quantum well lasers. Key-words:InGaAsN materials, Semiconductor quantum wells, linewidth enhancement factor, small signal modulation, bandwidth. INTRODUCTIONInGaAsN/GaAs quantum wells (QWs) have recently been shown to be very promising materials systems as active media for long wavelength lasers at 1.3 µm and possibly 1.5 µm in optical communications systems 1 . The large conduction band offset in the InGaAsN system results in a much greater electron confinement compared with the InGaAsP system and should result in much improved high temperature performance in optimized devices 2,3 . In addition, the large refractive index difference in this AlAs-GaAs based system makes it possible to fabricate monolithic Bragg reflectors with a small number of mirror pairs. For use as practical laser systems, a number of key performance parameters need to be investigated for the InGaAsN system and compared with the standard InGaAsP system in order to be able to best choose the system for its particular application. We have carried out a modeling study of the linewidth enhancement factor (LWEF) and the small signal modulation characteristics as a function of carrier density and temperature. The results show that InGaAsN quantum wells have much superior properties over the InGaAs system which is presently used in communications systems lasers. There remains a problem with the growth of InGaAsN materials and as yet, lattice matched materials at 1.5 microns have not been grown. A preliminary report on our modeling studies has been published. 4 The LWEF is one of the most important parameters of the semiconductor lasers for many practical applications 5,6 . It describes the carrier induced coupling of the gain change to the refractive index change in the active region of the semiconductor laser. The laser linewidth, modulation-induced wavelength chirp, gain guiding, and sensitivity to feedback are dependent on the LWEF. To explore the optimization conditions, it is very important to investigate the dependencies of the LWEF o...

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Gain in 1.3 μm materials: InGaNAs and InGaPAs semiconductor quantum-well lasers

Cited by 65 publications

References 18 publications

Large inherent optical gain from the direct gap transition of Ge thin films

Large inherent optical gain from the direct gap transition of Ge thin films

Unusual increase of the Auger recombination current in 1.3 μm GaInNAs quantum-well lasers under high pressure

Linewidth enhancement factor and modulation bandwidth of lattice-matched 1.5 micron InGaAsN/GaAs quantum well lasers

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