Gain assisted propagation of surface plasmon polaritons on planar metallic waveguides

Nezhad, Maziar P.; Tetz, K.; Fainman, Yeshaiahu

doi:10.1364/opex.12.004072

Cited by 336 publications

(211 citation statements)

References 8 publications

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“…Independently of the preceding discussion about multilayered metallic thin films, it is valuable to mention that gain-assisted propagation of SPPs at the interface between a metal and a dielectric with optical gain have been the focus of much research activity (Avrutsky, 2004;Nezhad et al, 2004). In this context, Er 3+ -doped tellurite glasses as the dielectric medium is very attractive (Wang et al, 1994).…”

Section: Resultsmentioning

confidence: 99%

Light Transmission via Subwavelength Apertures in Metallic Thin Films

Rivera¹,

Ferri²,

Silva³

et al. 2012

Plasmonics - Principles and Applications

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Section: Resultsmentioning

confidence: 99%

Light Transmission via Subwavelength Apertures in Metallic Thin Films

Rivera¹,

Ferri²,

Silva³

et al. 2012

Plasmonics - Principles and Applications

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“…For photonic mode operation, as discussed in Sections 2.2 and 2.3 above, a thicker shield is usually used, to minimize cavity threshold gain [39,68]. For photonic mode operation, SiO 2 is the usual choice of shield material, since its low refractive index compared to SiN x yields better mode confinement [41]. However, both SiO 2 and SiN x largely prevent heat dissipation through the shield, due to their low thermal conductivities.…”

Section: Nanolaser Design For Improved Thermal Performancementioning

confidence: 99%

“…From a purely electromagnetic perspective, the optimal shield thickness for a given total device size, corresponding to minimal threshold gain of a photonic mode, can be determined numerically [39], and may be approximated analytically [40]. Lasing in an optically-pumped metallo-dielectric subwavelength laser, with such an optimized thickness of SiO 2 shield, was demonstrated at room temperature [41]. In the case of electrical injection, the dielectric also serves as the electrical insulation layer and the passivation layer.…”

Section: Introductionmentioning

confidence: 99%

Temperature effects in metal-clad semiconductor nanolasers

Smalley

Shane

et al. 2015

Nanophotonics

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Abstract:As the field of semiconductor nanolasers becomes mature in terms of both the miniaturization to the true sub-wavelength scale, and the realization of room temperature devices, the integrated treatment of multiple design aspects beyond pure electromagnetic consideration becomes necessary to further advance the field. In this review, we focus on one such design aspect: temperature effects in nanolasers. We summarize recent efforts in understanding the interplay of various temperaturedependent parameters, and study their effects on optical mode and emission characteristics. Building on this knowledge, nanolasers with improved thermal performance can be designed, and their performance evaluated. Although this review focuses on metal-clad semiconductor lasers because of their suitability for dense chip-scale integration, these thermal considerations also apply to the broader field of nanolasers.

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“…Under the assumption that SPPs are tightly bound [22] and the imaginary part of the permittivity for both the dielectric and plasmonic media is small with respect to the real part we can derive following relation for the real and imaginary parts of the propagation constant [20,23] (See Appendix A). …”

mentioning

confidence: 99%

Metatronic transistor amplifier

Chettiar

Engheta

2015

Phys. Rev. B

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Utilizing the notion of metamaterials, in recent years the concept of a circuit and lumped circuit elements have been extended to the optical domains, providing the paradigm of optical metatronics, i.e. metamaterial-inspired optical nanocircuitry as a powerful tool for design and study of more complex systems at the nanoscale. In this Letter we present a design for a new metatronic element, namely, a metatronic transistor that functions as an amplifier. As shown by our analytical and numerical study here, this metatronic transistor provides a gain as well as isolation between the input and output ports of such 2-port device. The cascadability and fan-out aspects of this element are also explored. * To whom correspondence should be addressed. E-mail: engheta@ee.upenn.edu 2 The recent advances in metamaterial technology have provided us with unprecedented control over designing materials to achieve a wide range of properties [1][2][3]. The concept of lumped elements is very well established in the realms of electronics and microwave circuits. Extending these concepts to optical frequencies was at first challenging for a multitude of reasons. Firstly, to be considered a lumped element the size of the element should be significantly smaller than the operating wavelength and although this is easily achievable at low frequency and microwave frequencies it is far more challenging at optical frequencies, but this has been achieved using the technology of nanofabrication. Secondly, the material property for conductors (such as metals) is significantly different at optical frequencies compared to lower frequencies. This makes it challenging to easily switch between wave mode and circuit mode, which is fairly trivial at microwave frequencies due to the availability of efficient conductors, but in metatronics [4][5][6][7][8][9][10][11][12][13][14][15], which is a confluence of the plethora of well-established techniques in electronics transplanted into the much shorter wavelengths such as optical regimes [4][5][6][7], this issue has been dealt with using the displacement currents [6][7][11][12]. Thirdly, some of the well-developed active lumped elements in the radio frequency (rf) and microwave like semiconductor transistors and diodes may not, in principle, be extended exactly to optical frequencies due to the frequency limitation imposed on account of the finite effective mass of the charged carriers. Hence, the evident next stage in the evolution of the field of metatronics is to introduce active elements like transistors, diodes, amplifiers and oscillators.At microwave frequencies the systems consists of two broad categories of components apart from sources, the first one is the conduits that carry the energy in the 3 form of modes or waves. For the sake of abstraction, these conduits can be generally considered to be two-port (or multiple-port) structures such as waveguides or transmission lines. The second class of components represents the lumped elements, which could be single-port elements like loads and an...

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Gain assisted propagation of surface plasmon polaritons on planar metallic waveguides

Cited by 336 publications

References 8 publications

Light Transmission via Subwavelength Apertures in Metallic Thin Films

Light Transmission via Subwavelength Apertures in Metallic Thin Films

Temperature effects in metal-clad semiconductor nanolasers

Metatronic transistor amplifier

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