Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation

Maximov, M. V.; Asryan, Levon V.; Shernyakov, Yu. M.; Tsatsul’nikov, A. F.; Kaiander, I.; Nikolaev, V. V.; Kovsh, A. R.; Mikhrin, S. S.; Ustinov, V. M.; Zhukov, A. E.; Alfërov, Zh. I.; Ledenstou, N.N.; Bimberg, D.

doi:10.1109/3.918581

Cited by 78 publications

(25 citation statements)

References 28 publications

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“…(4)] increases and hence so does 1/η opt, th . This is in agreement with [14]- [16], where such nonmonotonic dependence on L was observed experimentally for QD lasers (cf. Fig.…”

Section: Carrier Density Internal Loss and Reciprocal Optical Efficsupporting

confidence: 90%

Feasibility of conventional method of extracting internal loss and internal quantum efficiency in edge-emitting quantum dot lasers

Asryan

2006

Quantum Dots, Particles, and Nanoclusters III

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Feasibility is discussed of the conventional method of determining internal loss coefficient and internal quantum efficiency from a measured plot of the reciprocal slope efficiency versus the cavity length L in semiconductor edgeemitting quantum dot (QD) lasers. The limitations are imposed by the cavity-length-dependence of internal loss and quantum efficiency themselves. The effect of internal loss is quantitatively analyzed, which originates from the dependence of internal loss on the carrier density, with the latter being L-dependent. In short cavities, a plot of the reciprocal slope efficiency versus the cavity length can significantly deviate from a straight line; particularly, the reciprocal slope efficiency increases with reducing the cavity length in short cavities. This plot asymptotically approaches an inclined line only in long cavities. Correspondingly, only infinitely-long-cavity (no mirror loss) values of the internal loss coefficient and the internal quantum efficiency can be extracted using the standard procedure. These latter differ significantly from those in short-cavity devices, thus strongly limiting the practicality of the procedure. For L longer than several hundred microns, the limitations are strong in a single-QD-layer laser and moderate in a multiple-QD-layer laser.

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“…(4)] increases and hence so does 1/η opt, th . This is in agreement with [14]- [16], where such nonmonotonic dependence on L was observed experimentally for QD lasers (cf. Fig.…”

Section: Carrier Density Internal Loss and Reciprocal Optical Efficsupporting

confidence: 90%

Feasibility of conventional method of extracting internal loss and internal quantum efficiency in edge-emitting quantum dot lasers

Asryan

2006

Quantum Dots, Particles, and Nanoclusters III

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“…It has been demonstrated that InAs or InGaAs QD lasers near 1.3 m have a continuous-wave with a low threshold current density of 19 A/cm 2 at room temperature and a single lateral-mode maximum power of 210 mW. 6 In these long-wavelength InAs-GaAs QD lasers, the deep confinement potentials lead to multiple energy levels and lasing from well-resolved higher-energy transitions. Several important effects obtained from the electroluminescence are related to the energy levels of the spatially lateral simple harmonic oscillators in the QDs.…”

mentioning

confidence: 99%

Temperature dependence of photoreflectance in InAs/GaAs quantum dots

Lai

Chang

et al. 2003

Applied Physics Letters

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An accurate determination of the electronic transitions of InAs/InGaAs/InP quantum dots for midinfrared lasers using simultaneous complementary spectroscopic techniques J. Appl. Phys. 104, 083109 (2008); 10.1063/1.3005903Wetting layer states of In As ∕ Ga As self-assembled quantum dot structures: Effect of intermixing and capping layer Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with roomtemperature emission at 1.3 μm

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“…11 for the case of 1.28 µm edge-emitting laser based on 3-fold stacked InAs QDs [ 32 ]. This symmetric shape of the gain spectrum together with relatively low modal gain can be, indeed, responsible for the remarkaby weak wavelength chirp in QD lasers [ 33 ].…”

Section: Reduced Linewidth Enhancement Factormentioning

confidence: 98%

Long-wavelength (1.3-1.5 micron) quantum dot lasers based on GaAs

et al. 2004

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The molecular beam epitaxy of self-assembled quantum dots (QDs) has reached a level such that the principal advantages of QD lasers can now be fully realized. We overview the most important recent results achieved to date including excellent device performance of 1.3 µm broad area and ridge waveguide lasers (J th <150A/cm 2 , I th =1.4 mA, differential efficiency above 70%, CW 300 mW single lateral mode operation), suppression of non-linearity of QD lasers, which results to improved beam quality, reduced wavelength chirp and sensitivity to optical feedback. Effect of suppression of side wall recombination in QD lasers is also described. These effects give a possibility to further improve and simplify processing and fabrication of laser modules targeting their cost reduction. Recent realization of 2 mW single mode CW operation of QD VCSEL with all-semiconductor DBR is also presented. Long-wavelength QD lasers are promising candidate for mode-locking lasers for optical computer application. Very recently 1.7-ps-wide pulses at repetition rate of 20 GHz were obtained on mode-locked QD lasers with clear indication of possible shortening of pulse width upon processing optimization. First step of unification of laser technology for telecom range with QD-lasers grown on GaAs has been done. Lasing at 1.5 µm is achieved with threshold current density of 0.8 kA/cm 2 and pulsed output power 7W.

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Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation

Cited by 78 publications

References 28 publications

Feasibility of conventional method of extracting internal loss and internal quantum efficiency in edge-emitting quantum dot lasers

Feasibility of conventional method of extracting internal loss and internal quantum efficiency in edge-emitting quantum dot lasers

Temperature dependence of photoreflectance in InAs/GaAs quantum dots

Long-wavelength (1.3-1.5 micron) quantum dot lasers based on GaAs

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