Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers

Kirstaedter, N.; Schmidt, Oliver G.; Ledentsov, N. N.; Bimberg, D.; Ustinov, V. M.; Egorov, A. Yu.; Zhukov, A. E.; Maximov, M. V.; Kop’ev, P. S.; Alfërov, Zh. I.

doi:10.1063/1.117419

Cited by 308 publications

(98 citation statements)

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“…They allow direct electrical pumping and provide high optical gain from a few hundred per cm for bulk semiconductors 21 to > 5×10 4 cm -1 in quantum dot structures 28 . Even higher optical gain, up to many thousands per cm for bulk semiconductors, has been inferred from recent experiments on metallic lasers and nanowire lasers 17,18,20,29,30 .…”

Section: Active Materials For Small Lasersmentioning

confidence: 99%

Advances in small lasers

2014

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In recent years there have been significant advances in the size and characteristics of small lasers, i.e. lasers with dimensions or modes sizes close to or smaller than the wavelength of emitted light. This work has primarily been led by innovative use of new materials and cavity designs. This article reviews some of the latest developments, particularly in metallic and plasmonic lasers, improvements in small dielectric lasers, and the emerging area of small bio-compatible/bioderived lasers. We examine the different approaches employed in small lasers to reduce size and how they lead to significant differences , particularly between metal and dielectric cavity lasers. We present potential applications for the various forms of small lasers and indicate where further developments are required.

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Section: Active Materials For Small Lasersmentioning

confidence: 99%

Advances in small lasers

2014

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“…For both pure InSb QDs (~1.25 nm) and larger InAs0.6Sb0.4 QDs (~3 nm), the electron-hole wave function overlap lies within the range 35%-40% (using both simulation methods), which is lower than in type I QDs and W-structures [18,19]. However, due to the high QD density, an exceptionally high material gain of ~20 × 10 4 cm −1 can be estimated for our type II QD, which is in the same range as for type I QDs [13]. Despite the smaller electron-hole wave function overlap, these type II QDs can serve as an efficient gain medium for mid-infrared laser diodes.…”

Section: Gain From Insb Qdsmentioning

confidence: 72%

“…From Figure 2, the modal gain of the QD laser was estimated to be ~29 cm −1 , (i.e., 2.9 cm −1 per QD layer on average). This value is lower than typical (InAs) type I QDs emitting in the near-infrared range which is in the order of 10 cm −1 [13,14], but is close to that of type II QWs emitting at a similar wavelength [12]. The relatively lower modal gain from type II structures is closely related to the large spatial separation between electrons and holes compared with type I structures, which results in a much smaller electron-hole wave function overlap.…”

Section: Gain From Insb Qdsmentioning

confidence: 75%

Gain and Threshold Current in Type II In(As)Sb Mid-Infrared Quantum Dot Lasers

Zhuang

Krier

2015

Photonics

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Abstract:In this work, we improved the performance of mid-infrared type II InSb/InAs quantum dot (QD) laser diodes by incorporating a lattice-matched p-InAsSbP cladding layer. The resulting devices exhibited emission around 3.1 µm and operated up to 120 K in pulsed mode, which is the highest working temperature for this type of QD laser. The modal gain was estimated to be 2.9 cm −1 per QD layer. A large blue shift (~150 nm) was observed in the spontaneous emission spectrum below threshold due to charging effects. Because of the QD size distribution, only a small fraction of QDs achieve threshold at the same injection level at 4 K. Carrier leakage from the waveguide into the cladding layers was found to be the main reason for the high threshold current at higher temperatures.

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“…Room temperature lasing energy was close to optical transition energy in a wetting layer (WL) [10]. Extremely high material and differential gain have been reported for these lasers, however, poor optical confinement factor led to moderate values of modal gain [14]. Important improvements in threshold characteristics of quantum dot diode lasers became possible due to the use of vertically coupled quantum dots in the active region [15].…”

Section: Threshold Characteristicsmentioning

confidence: 99%

Semiconductor Quantum Dot Heterostructures (Growth and Applications)

Ustinov

2000

Nanostructured Films and Coatings

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The reduction of dimensionality of the carrier motion in quantum nanostructures brings new, interesting effects in semiconductor physics. In addition, it opens an exciting possibility of improving the device performance. It has been predicted that the delta-function like density of states inherent for the objects with three-dimensional quantum confinement (quantum dots) should lead to the decrease in threshold current density, and improvement of its temperature stability (for semiconductor injection lasers when the quantum dot heterostructures are used as an active region). In the present work we discuss the synthesis of InAs/GaAs quantum dots by using selforganization phenomena at the initial stages of strained layer heteroepitaxy. We show that the driving force for the island formation is strain accumulating during the deposition of the lattice mismatched material. Quantum dot size and shape are presented and their optical properties are discussed. The characteristics of quantum dot injection lasers are shown. The ways to reduce threshold current density and improve its temperature stability are demonstrated. The band-gap and strain engineering are shown to be effective tools for controlling the quantum dot optical emission range.

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Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers

Cited by 308 publications

References 0 publications

Advances in small lasers

Advances in small lasers

Gain and Threshold Current in Type II In(As)Sb Mid-Infrared Quantum Dot Lasers

Semiconductor Quantum Dot Heterostructures (Growth and Applications)

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