GaAs<sub>0.75</sub>P<sub>0.25</sub>/Si Dual-Junction Solar Cells Grown by MBE and MOCVD

Grassman, Tyler J.; Chmielewski, Daniel J.; Carnevale, Santino D.; Carlin, John A.; Ringel, S. A.

doi:10.1109/jphotov.2015.2493365

Cited by 102 publications

(55 citation statements)

References 27 publications

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“…12 Despite this high efficiency, monolithic two-terminal tandems represent arguably the most elegant tandem design but pose formidable challenges in terms of hetero-epitaxial material growth. [334][335][336][337][338] III-V/silicon tandem solar cells fabricated via growth of III-V layer stacks on epitaxial substrates combined with lift-off and layer transfer techniques have been demonstrated, but remain difficult to scale to large volume production. [339][340][341][342][343] However, a method for the growth of III-V layers on non-epitaxial substrates has recently been introduced that could change this situation.…”

Section: Outlook Beyond Single-junction Solar Cellsmentioning

confidence: 99%

High-efficiency crystalline silicon solar cells: status and perspectives

Battaglia

Cuevas

Wolf

2016

Energy Environ. Sci.

885

575

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Section: Outlook Beyond Single-junction Solar Cellsmentioning

confidence: 99%

High-efficiency crystalline silicon solar cells: status and perspectives

Battaglia

Cuevas

Wolf

2016

Energy Environ. Sci.

885

575

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“…[8] However, a relatively high threading dislocation density after lattice grading still limits the performance of III-V on Si solar cells. [9][10][11] Other issues such as the degradation of minority carrier lifetime in Si due to the overgrowth by metalorganic vapor-phase epitaxy (MOVPE) or molecular-beam epitaxy (MBE) have been studied intensively [12][13][14][15] and can be avoided today. One possibility is applying a SiN x diffusion barrier on the back side of the Si bottom cell to avoid in-diffusion of contaminants from the wafer carrier during high-temperature epitaxy.…”

Section: Introductionmentioning

confidence: 99%

Direct Growth of a GaInP/GaAs/Si Triple‐Junction Solar Cell with 22.3% AM1.5g Efficiency

et al. 2019

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III-V on Si multijunction solar cells exceede the efficiency limit of Si singlejunction devices but are often challenged by expensive layer transfer techniques. Here, progress in the development of direct epitaxial growth for GaInP/GaAs/Si triple-junction solar cells is reported. III-V absorbers with a total thickness of 4.9 μm are grown onto a Si bottom cell using metal organic vapor phase epitaxy. A new record efficiency of 22.3% under AM1.5g conditions is reached herein, outperforming the previous value of 19.7%. This improvement is possible through better nucleation conditions for the first GaP layer on Si and consequently the reduction of threading dislocations within the III-V absorbers from 1.4 Â 10 8 to 2.2 Â 10 7 cm À2 . Further efficiency improvements toward 30% require even lower threading dislocation densities in the order of 1 Â 10 6 cm À2 , better light trapping in the Si bottom cell, and a reduction of parasitic absorption within the GaAs y P 1-y graded buffer.

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“…Regarding highly efficient tandem absorber structures for solar energy conversion, group IV substrates are often preferred over III/V substrates: Germanium, for example, is more suitable as substrate used in the industry, when manufacturing standard triple‐junction solar cells, than GaAs, since the bandgap energy is lower and substrate costs are considerably cheaper. III/V‐on‐Si integration is considered to further reduce costs of solar cells, to increase efficiency, and is also desired for microelectronics . In contrast to III/V crystal structures, both Si and Ge substrates do only have covalent bonds between two atoms of the identical kind and are thus nonpolar lattice structures.…”

Section: Epitaxial Reference Surfacesmentioning

confidence: 99%

In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

Supplie

May

Brückner

et al. 2017

Adv Materials Inter

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which he pioneered and established. In general, interfaces do not only determine electronic properties of the final device; their atomic order also highly affects growth kinetics and defect formation. Moreover, the design of solid-liquid and hybrid interfaces determines their chemical reactivity and stability. In situ monitoring of interface preparation, formation, and interfacial reactions thus promises efficient process control. Paired with a detailed understanding of interface formation mechanisms, however, the true power of in situ control is to allow for specific modification and tuning of interface formation for the device of choice. There are several excellent reviews on in situ approaches covering wide ranges of materials from basic science to applications as well as varieties of preparation and analysis techniques. [2][3][4][5][6][7][8][9][10][11] As indicated in Figure 1, this review will be focused on in situ control over interfaces of materials that are relevant for photoinduced reactions in high-efficiency solar energy conversion and sensing applications with in situ control of semiconductor/polymer/ biological interfaces. We will restrict the techniques to realistic and complex, non-ultrahigh-vacuum (UHV) ambient, where in situ control is most demandingbut also highly desired. The more complex the interfacial reactions are, the more important is the in situ characterization. Ex situ approaches can contribute to an indirect understanding of interface formation, but to understand and, finally, control the dynamic processes taking place, real-time measurements are appropriate. The challenge, we are facing, is twofold: On the one hand, increased interaction with the surrounding ambient causes higher complexity. Yet at the same time, it decreases the number of applicable techniques. On the other hand, those techniques are often elaborate and not necessarily easy to interpret. In a nutshell, we will discuss four main topics:(i) Surface preparation during growth of structures for highefficiency solar energy conversion: World-record conversion efficiencies in both photovoltaics [12,13] and solar water splitting [14] are achieved with multijunction solar cells based on epitaxial III/V compound semiconductor structures. We will discuss in situ controlled preparation Solar energy conversion and photoinduced bioactive sensors are representing topical scientific fields, where interfaces play a decisive role for efficient applications. The key to specifically tune these interfaces is a precise knowledge of interfacial structures and their formation on the microscopic, preferably atomic scale. Gaining thorough insight into interfacial reactions, however, is particularly challenging in relevant complex chemical environment. This review introduces a spectrum of material systems with corresponding interfaces significant for efficient applications in energy conversion and sensor technologies. It highlights appropriate analysis techniques capable of monitoring critical physicochemical reactions in situ during non-vacuu...

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GaAs_0.75P_0.25/Si Dual-Junction Solar Cells Grown by MBE and MOCVD

Cited by 102 publications

References 27 publications

High-efficiency crystalline silicon solar cells: status and perspectives

High-efficiency crystalline silicon solar cells: status and perspectives

Direct Growth of a GaInP/GaAs/Si Triple‐Junction Solar Cell with 22.3% AM1.5g Efficiency

In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

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GaAs0.75P0.25/Si Dual-Junction Solar Cells Grown by MBE and MOCVD

Cited by 102 publications

References 27 publications

High-efficiency crystalline silicon solar cells: status and perspectives

High-efficiency crystalline silicon solar cells: status and perspectives

Direct Growth of a GaInP/GaAs/Si Triple‐Junction Solar Cell with 22.3% AM1.5g Efficiency

In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

Contact Info

Product

Resources

About

GaAs_0.75P_0.25/Si Dual-Junction Solar Cells Grown by MBE and MOCVD