GaAs solid state detectors for particle physics

Beaumont, S.P.; Bertin, R.; Booth, C. N.; Buttar, C. M.; Carraresi, L.; Cindolo, F.; Colocci, M.; Combley, F.; D’Auria, S.; Papa, C. Del; Doḡru, M.; Edwards, M.; Fiori, F.; Foster, F.; Francescato, A.; Hou, Yaonan; Houston, P.A.; Jones, B.K.; Lynch, J.G.; Lisowski, B.; Matheson, J.; Nava, F.; Nuti, Marco; O’Shea, V.; Pelfer, P. G.; Raine, C.; Santana, J.; Saunders, I.J.; Seller, P.; Sharp, P.; Skillikorn, I.O; Sloan, T.; Smith, K. M.; Tartoni, N.; Have, I. ten; Turnbull, R.M.; Vinattieri, A.; Zichichi, A.

doi:10.1016/0168-9002(92)91217-w

Cited by 41 publications

(6 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Fig [1] Detector leakage current increase vs. proton irradiation fluence. The current increases initially and then remains flat at a factor of 2 higher value in the range of interest.…”

Section: Measurements and Resultsmentioning

confidence: 99%

“…GaAs had been proposed as a radiation hard detector material for tracking particles in this very forward region, where the radiation environment will be harshest and precludes the use of standard types of semiconductor radiation detectors. Extensive studies [1] have already been carried out on the resistance to radiation damange of this material using Gamma radiation. The purpose of this study was to evaluate the damage from neutrons and charged particles with particular emphasis on pions, as these are foreseen to be one of the dominant sources of damage to semiconductor particle detectors at the LHC.…”

Section: Introductionmentioning

confidence: 99%

“…Extensive studies [1] have already been carried out on the resistance to radiation damange of this material using Gamma radiation. The purpose of this study was to evaluate the damage from neutrons and charged particles with particular emphasis on pions, as these are foreseen to be one of the dominant sources of damage to semiconductor particle detectors at the LHC.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Radiation-induced damage in GaAs particle detectors

Bates

Viá

O’Shea

et al. 1997

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

The motivation for investigating the use of GaAs as a material for detecting particles in experiments for AbstractThe motivation for investigating the use of GaAs as a material for detecting particles in experiments for High Energy Physics (HEP) arose from its perceived resistance to radiation damage. This is a vital requirement for detector materials that are to be used in experiments at future accelerators where the radiation environments would exclude all but the most radiation resistant of detector types.

show abstract

“…Fig [1] Detector leakage current increase vs. proton irradiation fluence. The current increases initially and then remains flat at a factor of 2 higher value in the range of interest.…”

Section: Measurements and Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Radiation-induced damage in GaAs particle detectors

Bates

Viá

O’Shea

et al. 1997

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

show abstract

“…Trapping of a carrier occurs when its trapping time is shorter than the transit time. Furthermore, the detrapping mechanism is taken into account in this model [17][18][19][20]. Normally the Charge Collection Efficiency, which is an integral parameter, is used in order to determine the total amount of collected charge.…”

Section: Numerical Modelmentioning

confidence: 99%

GaAs X-ray detector characterization through a 3D finite element model

Rízzí¹,

Maurantonio²,

Castagnolo³

2006

J Comput Electron

View full text Add to dashboard Cite

In this paper the characterization of a GaAs X-ray pixel detector is presented. The performance is obtained experimentally by a detector using a Schottky diode on a semiinsulating, Vertical Gradient Freeze, (100) oriented single crystal GaAs substrate. Moreover, a new 3D Model based on the Finite Element Method is shown which takes into account the carrier trapping and emission phenomena. The model analyzes the single event upset for a photon hitting the pixel surface in any direction. The main advantage of the model used is its ability to determine the influence of both the position of the impact point and of the slope of the particle trajectory with respect to the pixel surface on the detector performance. The numerical simulations obtained confirm the experimental values and permit the indirect evaluation of the charge collection efficiency through a preliminary determination of the real trap distribution and transport parameters depending on the electric field.

show abstract

“…Moreover the detectors have proved able to withstand radiation levels up to 50 Mrad gamma rays and 7 × 10 14 neutrons per cm 2 , without severe degradation of their performance [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Influence of electron traps on charge-collection efficiency in GaAs radiation detectors

Nava

Canali

Castaldini

et al. 1994

Nuclear Instruments and Methods in Physics Research Section A:

View full text Add to dashboard Cite

This paper deals with the interpretation of the charge-collection efficiency for minimum ionizing particles in terms of electron traps in semi-insulating liquid encapsulated Czochralski gallium arsenide detectors fabricated with thicknesses of 80 µm, 200 µm, and 300 µm. The results, obtained within the context of the RD-8 project, show that low values of chargecollection efficiency cannot be ascribed primarily to the presence of high concentrations of EL2 defects. Possible ways of increasing the charge-collection efficiency are briefly addressed.

show abstract

GaAs solid state detectors for particle physics

Cited by 41 publications

References 4 publications

Radiation-induced damage in GaAs particle detectors

Radiation-induced damage in GaAs particle detectors

GaAs X-ray detector characterization through a 3D finite element model

Influence of electron traps on charge-collection efficiency in GaAs radiation detectors

Contact Info

Product

Resources

About