GaAs quantum dots grown by droplet etching epitaxy as quantum light sources

Silva, Saimon Filipe Covre da; Undeutsch, Gabriel; Lehner, Barbara; Manna, Santanu; Krieger, Tobias M.; Reindl, Marcus; Schimpf, Christian; Trotta, Rinaldo; Rastelli, Armando

doi:10.1063/5.0057070

Cited by 45 publications

(35 citation statements)

References 98 publications

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“…The FSS is unique to every single QD and depends on its shape and strain environment. The development of a well-controlled low-strain QD growth has allowed the fabrication of highly symmetric GaAs QDs with very low initial FSS of only a few μeV. Similar efforts have been made in the telecom C-band for InAs QDs grown on InP and on a metamorphic buffer layer .…”

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confidence: 99%

Strain-Controlled Quantum Dot Fine Structure for Entangled Photon Generation at 1550 nm

et al. 2021

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Entangled photon generation at 1550 nm in the telecom C-band is of critical importance as it enables the realization of quantum communication protocols over long distance using deployed telecommunication infrastructure. InAs epitaxial quantum dots have recently enabled on-demand generation of entangled photons in this wavelength range. However, time-dependent state evolution, caused by the fine-structure splitting, currently limits the fidelity to a specific entangled state. Here, we show fine-structure suppression for InAs quantum dots using micromachined piezoelectric actuators and demonstrate generation of highly entangled photons at 1550 nm. At the lowest fine-structure setting, we obtain a maximum fidelity of 90.0 ± 2.7% (concurrence of 87.5 ± 3.1%). The concurrence remains high also for moderate (weak) temporal filtering, with values close to 80% (50%), corresponding to 30% (80%) of collected photons, respectively. The presented fine-structure control opens the way for exploiting entangled photons from quantum dots in fiber-based quantum communication protocols.

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confidence: 99%

Strain-Controlled Quantum Dot Fine Structure for Entangled Photon Generation at 1550 nm

et al. 2021

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“…The shaped laser pulse is then directed to the closedcycle cryostat (base temperature 8 K), where the quantum dot sample is mounted on a three-axis piezoelectric stage (ANPx101/ANPz102, Attocube Systems AG). Our sample consists GaAs/AlGaAs quantum dots obtained by the Al-droplet etching method [42,45]. The dots are embedded in the center of a lambda-cavity placed between a bottom (top) distributed Bragg reflector consisting of 9 (2) pairs of λ/4 thick Al 0.95 Ga 0.05 As/Al 0.2 Ga 0.8 As layers.…”

Section: Quantum Dot Measurementsmentioning

confidence: 99%

“…The quantum dots chosen for this experiment are grown by the droplet epitaxy technique [42,45]. This process results in dots grown in random locations on the sample.…”

Section: Supplementary Information a Experimental Detailsmentioning

confidence: 99%

SUPER Scheme in Action: Experimental Demonstration of Red-detuned Excitation of a Quantum Dot

Karli,

Kappe,

Remesh

et al. 2022

Preprint

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The quest for the perfect single-photon source includes finding the optimal protocol for exciting the quantum emitter. Based on a recently proposed, so-called SUPER (swing-up of quantum emitter population) scheme, we demonstrate experimentally that two red-detuned laser pulses, neither of which could yield a significant upper-level population individually, lead to the coherent excitation of a semiconductor quantum dot. We characterize the emitted single photons and show that they have properties comparable to those achieved under resonant excitation schemes.

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“…As a single-photon source, we use GaAs QDs grown by droplet etching epitaxy, 25 which emit in the range of 780-805 nm wavelength. They have excellent emission properties, among them a high single-photon purity, 26 near zero fine structure splitting, 27 and fast radiative decay rates, which makes these QDs appealing single-photon and entangled photon pair sources.…”

Section: Introductionmentioning

confidence: 99%

“…They have excellent emission properties, among them a high single-photon purity, 26 near zero fine structure splitting, 27 and fast radiative decay rates, which makes these QDs appealing single-photon and entangled photon pair sources. 25,28 In this work, we implement active temporal-to-spatial mode demultiplexing of photons from a GaAs QD singlephoton source into four spatial modes. Pulsed resonant excitation of the QD allows us to generate a train of single photons in well defined temporal modes (ideally a single photon per excitation laser pulse).…”

Section: Introductionmentioning

confidence: 99%

Fast and efficient demultiplexing of single photons from a quantum dot with resonantly enhanced electro-optic modulators

Münzberg¹,

Draxl²,

Silva³

et al. 2022

Preprint

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We report on a multi-photon source based on active demultiplexing of single photons emitted from a resonantly excited GaAs quantum dot. Active temporal-to-spatial mode demultipexing is implemented via resonantly enhanced free-space electro-optic modulators, making it possible to route individual photons at high switching rates of 38 MHz. We demonstrate routing into four spatial modes with a high end-to-end efficiency of ≈ 79 % and measure a four-photon coincidence rate of 0.17 Hz mostly limited by the single-photon source brightness and not by the efficiency of the demultiplexer itself. We use the demultiplexer to characterize the pairwise indistinguishability of consecutively emitted photons from the quantum dot with variable delay time.

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GaAs quantum dots grown by droplet etching epitaxy as quantum light sources

Cited by 45 publications

References 98 publications

Strain-Controlled Quantum Dot Fine Structure for Entangled Photon Generation at 1550 nm

Strain-Controlled Quantum Dot Fine Structure for Entangled Photon Generation at 1550 nm

SUPER Scheme in Action: Experimental Demonstration of Red-detuned Excitation of a Quantum Dot

Fast and efficient demultiplexing of single photons from a quantum dot with resonantly enhanced electro-optic modulators

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