2008
DOI: 10.1364/ol.33.001908
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GaAs photonic crystal cavity with ultrahigh Q: microwatt nonlinearity at 155 μm

Abstract: We haves realized and measured a GaAs nanocavity in a slab photonic crystal based on the design by Kuramochi et al. [Appl. Phys. Lett. 88, 041112 (2006)]. We measure a quality factor Q=700,000, which proves that ultrahigh Q nanocavities are also feasible in GaAs. We show that owing to larger two-photon absorption in GaAs nonlinearities appear at the microwatt level and will be more functional in gallium arsenide than in silicon nanocavities.

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Cited by 102 publications
(66 citation statements)
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“…Waveguide-coupled devices would therefore require much higher bare cavity Q to ensure that the light remains on the chip. A number of works have reported a bare cavity Q in GaAs photonic crystal cavities exceeding 250,000 43,44 , which could potentially enable both efficient on-chip coupling and high cooperativity. Employing regulated quantum dot growth techniques 45,46 in conjunction with local frequency tuning 47 could further open up the possibility to integrate multiple switches on a single semiconductor chip.…”
Section: Discussionmentioning
confidence: 99%
“…Waveguide-coupled devices would therefore require much higher bare cavity Q to ensure that the light remains on the chip. A number of works have reported a bare cavity Q in GaAs photonic crystal cavities exceeding 250,000 43,44 , which could potentially enable both efficient on-chip coupling and high cooperativity. Employing regulated quantum dot growth techniques 45,46 in conjunction with local frequency tuning 47 could further open up the possibility to integrate multiple switches on a single semiconductor chip.…”
Section: Discussionmentioning
confidence: 99%
“…Neglecting the effects of pure dephasing for the moment being, we take Q a = 2Q b = 7 × 10 5 , and hence κ a = κ b /4 1 µeV at 1.5 µm. Such values have been experimentally demonstrated for fundamental photonic crystal cavity modes at 1.55 µm in state-of-art nanostructured cavities made of III-V materials 48 , and we have assumed that second-harmonic modes will have a Q-factor that is at least a factor of 2 smaller than the fundamental mode 49 . In summary, it should be noted that the scheme proposed here relies on the simultaneous realization of three main conditions for the nanostructured cavity: high Qfactor of fundamental mode, small mode volume, and double resonance.…”
Section: Nonlinear Couplingmentioning
confidence: 96%
“…Coupling of the field mode to radiation modes above the light line causes decay of the field within the cavity; this coupling is minimized by moving two of the holes [46], resulting in a large . These large a e -cavities were first demonstrated for silicon membranes, but recent experiments on InP [51] and GaAs [52] cavities, show that the fabrication quality with these III-V materials is becoming comparable with silicon. Figure 5 (online color at: www.lpr-journal.org) Schematic diagram of single photon source based on a monolithic cavity; the green dot refers to the quantum dot, and the photon is emitted vertically via the leaky cavity mode.…”
Section: Single Photon Emission Within a Pc Cavitymentioning
confidence: 99%