GaAs photocathodes for low light level imaging

André, J.P.; Guittard, P.; Hallais, J.; Piaget, C.

doi:10.1016/0022-0248(81)90293-1

Cited by 54 publications

(15 citation statements)

References 20 publications

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“…Negative-electron-affinity (NEA) gallium arsenide (GaAs) photocathodes have high quantum efficiency, good long-wavelength response, and high spin polarization. Thus, these photocathodes have several important applications, including night vision image intensifiers, photo-multiplier tubes, polarized electron sources for next-generation electron accelerators, and electron beam lithography [1][2][3][4][5]. The quantum efficiency, electron spin polarization, stability, and reflectivity of GaAs film photocathodes have been widely investigated [6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Theoretical analysis and modeling of photoemission characteristics of GaAs nanowire array photocathodes

Zou

Deng

et al. 2015

Mater. Res. Express

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Gallium arsenide (GaAs) nanowire array (NWA) photocathodes have unique electrical and optical properties. Based on studies about photon absorption, band structure, and electron transport properties of GaAs nanowire, a photoemission model for GaAs NWA photocathodes is established. According to the model, we simulate and analyze the photocurrent, spectral response, and absorption properties of ordered GaAs NWA photocathodes. The results present a very interesting phenomenon; the photocurrent and spectral response peak at incident angles of 20°and 30°, respectively. These special properties of NWA cathodes differentiate them from their thin film counterparts. We also analyze the effects of nanowire length and diameter on the photocurrent of NWA cathodes, and find the optimum height of the nanowires is 10 μm. This study shows that NWAs exhibit higher absorbance and excellent charge transport. Thus, GaAs NWA photocathodes are excellent candidates for electron sources.

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Section: Introductionmentioning

confidence: 99%

Theoretical analysis and modeling of photoemission characteristics of GaAs nanowire array photocathodes

Zou

Deng

et al. 2015

Mater. Res. Express

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“…So for a constant doping concentration, uniformity of diffusion length can be estimated using photoluminescence intensity according to equation (4). increases with the rise of content of aluminum.…”

Section: Theory Calculationmentioning

confidence: 99%

“…Room temperature photoluminescence is used to estimate the minority carrier electron diffusion length. It can be show that the integral photoluminescence intensity is proportion to the diffusion length of minority carriers [4] . The results of the room temperature …”

Section: Introductionmentioning

confidence: 99%

Calculation of integral photoluminescence for the GaAs photocathode bonding assembly

Chi¹,

Jiao²,

Cheng³

et al. 2013

SPIE Proceedings

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The ideal status of the GaAs photocathode bonding assembly is as fellows: the GaAs photocathode should not have additional stress; the crystal lattice should keep integrity after deposited Si 3 N 4 reflection reducing coating and bonging process that GaAs epitaxial material on a glass window. In order to estimating the bonding quality of the GaAs photocathode bonding assembly, integral photoluminescence intensity was calculated on the ideal bonding condition. Assuming the energy of incident light was absorbed by GaAs active layer except reflection, according to the optical character of the GaAs photocathode bonding assembly, the value was calculated. This value could be the standard to assess the quality of the GaAs photocathode bonding assembly and improve the bonding technology that the GaAs epitaxial material is bonded to a glass window.

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“…They have several important applications, including night vision image intensifiers, photo-multiplier tubes, polarized electron sources for next-generation electron accelerators, and electron beam lithography, due to their high quantum efficiency, good long-wavelength response, and high spin polarization [1][2][3][4][5]. The quantum efficiency, electron spin polarization, stability, electron energy, and angular distribution of AlGaAs/GaAs photocathodes have been widely investigated [5][6][7][8]; however, the resolution characteristics of photocathodes are rarely reported.…”

Section: Introductionmentioning

confidence: 99%

Resolution characteristics of graded doping and graded composition transmission-mode AlGaAs/GaAs photocathodes

et al. 2015

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The resolution model of a graded doping and graded composition transmission-mode AlGaAs/GaAs photocathode is solved numerically from the two-dimensional continuity equations. According to the model, we calculate the theoretical modulation transfer function (MTF) of different graded doping and graded composition structures. The simulation results show that both graded composition and graded doping structures can increase the resolution of the photocathode. The exponentially doping and linear composition photocathode has the maximum resolution among the possible graded doping and graded composition photocathodes. The resolution improvement is attributed to the built-in electric field induced by a graded composition or graded doping structure. The simulation results also show that the MTFs of AlGaAs/GaAs cathodes increase as the AlGaAs layer thickness decreases, or the incident light wavelength increases.

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GaAs photocathodes for low light level imaging

Cited by 54 publications

References 20 publications

Theoretical analysis and modeling of photoemission characteristics of GaAs nanowire array photocathodes

Theoretical analysis and modeling of photoemission characteristics of GaAs nanowire array photocathodes

Calculation of integral photoluminescence for the GaAs photocathode bonding assembly

Resolution characteristics of graded doping and graded composition transmission-mode AlGaAs/GaAs photocathodes

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