1962 International Electron Devices Meeting 1962
DOI: 10.1109/iedm.1962.187342
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GaAs Infrared source

Abstract: A d i f f u d junction GaAs diode has been developed for use as a fast, higheefficlency, infrared source. The diode is forward biased with the light being generated by the recombination of minority carriers in the semiconductor bulk. The device is a P+-N structure with a spaced contact covering a minor portion of the N-type face of the wafer through which the radiation is emitted. less than band gap (E gap = 1.43ev at 300' K) and a broad peak at &outThe infrared radiation is characterized by a sharply defined … Show more

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Cited by 3 publications
(1 citation statement)
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“…soon as Fairchild Optoelectronics instigated manufacturing the low-cost LED devices [10]. In 1976, Thomas P. Pearsall invented a new semiconductor LED materials to be used in fiber optics and telecommunication systems with tremendously bright and high efficiency [11]. In 1979, first blue LED using gallium nitride (GaN) was designed by Shuji Nakamura of Nichia Corporation.…”
mentioning
confidence: 99%
“…soon as Fairchild Optoelectronics instigated manufacturing the low-cost LED devices [10]. In 1976, Thomas P. Pearsall invented a new semiconductor LED materials to be used in fiber optics and telecommunication systems with tremendously bright and high efficiency [11]. In 1979, first blue LED using gallium nitride (GaN) was designed by Shuji Nakamura of Nichia Corporation.…”
mentioning
confidence: 99%