(GaAs/InAs)–GaAsSb digital alloy type-II superlattice for extended short-wavelength infrared detection
Takashi Kato,
Makoto Murata,
Sundararajan Balasekaran
et al.
Abstract:GaInAs–GaAsSb type-II superlattices (T2SLs) on an InP substrate are promising candidates for an optical absorption layer in the extended short-wavelength region (2–3 μm), offering more flexibility in designing a cutoff wavelength compared to strained GaInAs bulk material. However, T2SL-based photodetectors inherently suffer from lower quantum efficiency (QE) due to the reduced overlap of the wavefunctions of the conduction and valence bands in the optical matrix element of the T2SL. To improve QE, a (GaAs/InAs… Show more
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