GaAs Growth Using an MBE System Connected with a 100 kV UHV Maskless Ion Implanter

Takamori, Akira; Miyauchi, Eizo; Arimoto, Hiroshi; Bamba, Yasuo; Hashimoto, Hisao

doi:10.1143/jjap.23.l599

Cited by 48 publications

(6 citation statements)

References 8 publications

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“…Minimization of contamination can be realized by using a focused ion beam ͑FIB͒ and MBE combined system and performing these steps in clear ultrahigh vacuum ͑UHV͒ ambient. [4][5][6] Use of FIB makes it possible to form patterned doped layers without postpatterning steps, and the use of low-energy beams is promising to minimize ion irradiation damage. Multiple implantation at low and high energy may enable one to form a doped multilayer structure.…”

Section: Introductionmentioning

confidence: 99%

Carrier distribution profiles in Si-doped layers in GaAs formed by focused ion beam implantation and successive overlayer growth

Hada

Goto

Yanagisawa

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Characterization of Si-doped layer in GaAs fabricated by a focused ion beam/molecular beam epitaxy combined system J.Selectively doped layers buried in GaAs were formed by low ͑50 and 200 eV͒ and high ͑30 keV͒ energy focused Si ion implantation and successive overlayer growth using a focused ion beam/ molecular beam epitaxy ͑MBE͒ combined system to investigate the possibility to form patterned ␦-doped layers. Carrier distribution profiles were measured by means of a capacitance-voltage profiling technique at room temperature. It was found for the low-energy implantation that the width of the depth profiles of the carrier distribution decreased with increasing sheet carrier density and was roughly in agreement with a theoretical estimation obtained by solving the Poisson equation. The width was decreased when the sheet carrier density increased by annealing. This indicates that the width is determined by a sheet carrier density and not by Si dopant profiles, and that narrower carrier profiles can be formed by optimizing annealing parameters, although the widths were 2-5 times wider than those observed for the MBE-grown ␦-doped GaAs. The same doping efficiency as for the low-energy implantation was achieved but the distribution width was close to that of the dopant distribution.

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Section: Introductionmentioning

confidence: 99%

Carrier distribution profiles in Si-doped layers in GaAs formed by focused ion beam implantation and successive overlayer growth

Hada

Goto

Yanagisawa

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…In the past, this two-dimensional restriction was partially lifted by regrowth techniques as initially described by Takamori et al 1 In this work an epilayer was transferred under ultrahigh vacuum ͑UHV͒ conditions from the molecular beam epitaxy ͑MBE͒ growth chamber to a scanning FIB column where dopant was implanted at high energy into the semiconductor crystal. The wafer was subsequently returned to the MBE chamber for the growth of additional compositional structure.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of in situ Ohmic contacts patterned in three dimensions using a focused ion beam during molecular beam epitaxial growth

Sazio¹

1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Focused ion beam patterned Hall bars and Ohmic columns embedded in molecular-beam-epitaxial-grown GaAs/AlGaAsDiffuse reflectance spectroscopy for in situ process monitoring and control during molecular beam epitaxy growth of InGaAs/AlGaAs pseudomorphic high electron mobility transistors Independently contacted electron-hole gas heterostructures fabricated with focused ion beam doping during molecular beam epitaxial growth Focused ion beam doping during molecular beam epitaxial ͑MBE͒ growth is a novel technique that allows the in situ fabrication of unique three-dimensional semiconductor structures with doping profiles unobtainable using standard planar lithography. Conventional MBE growth uses a thermal Si effusion cell as the dopant source during two-dimensional layer growth of III-V semiconductor material. In the technique described here, a scanning Si focused ion beam ͑FIB͒ has been added onto the growth chamber to introduce the dopant atoms selectively in a maskless lithographic process. As the FIB is rastered in the xy plane under computer control during crystal growth in the z direction, it is possible to generate specific three-dimensional dopant patterns embedded within the semiconductor. Furthermore, the patterned semiconductor crystal requires no post growth anneal as the dopant ions are decelerated by a retarding electric field on the sample. The dopant is thus deposited on the epilayer surface rather than impinging at high energy, minimizing crystal damage. In this article, we report the successful fabrication and electrical measurements of highly doped GaAs/AlGaAs structures, directly written by focused ion MBE ͑FIMBE͒. The scanning Si FIB has been used to form both lateral and vertical, low resistance Ohmic contacts to two-dimensional electron gases at low temperatures. Lateral patterning was initially exploited to form extended contacts to an electrostatically induced electron gas. This was achieved by FIMBE using both selective modulation doping ͑forming two-dimensional electron gas sheet contacts to the induced gas͒ and selective n ϩ doping directly in the quantum well. Field-effect transistor action and Shubnikov de Haas oscillations were observed, thus demonstrating that the conventionally difficult constraint of self-alignment in undoped GaAs/AlGaAs field-effect transistor structures can be eliminated. Vertical patterning was used to form degenerately doped n ϩ columns embedded within a conventional high electron mobility transistor structure. The resulting I -V characteristics, recorded at room temperature and at 1.5 K in the presence of a 5 T magnetic field, will be discussed. The ability to introduce specific doping within a structure opens the possibility of forming three-dimensional integrated conducting pathways which would not be possible by any other means.

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“…Three-dimensional ͑3D͒ nanostructures are required for realization of these devices. A focused ion beam ͑FIB͒/molecular beam epitaxy ͑MBE͒ combined system [1][2][3][4][5][6][7][8][9][10] is one of the promising tools because 3D nanostructures are defined in situ in clean ultra-high-vacuum ambient by heterolayer growth by MBE and by selective doping by FIB without using any lithographic techniques. Sazio et al 8 performed in situ doping in GaAs epilayers and fabrication of two-dimensional electron gas layers in GaAs/AlGaAs heterostructures using 100 eV Si FIB implantation and performed MBE growth.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Si-doped layer in GaAs fabricated by a focused ion beam/molecular beam epitaxy combined system

Yanagisawa¹

1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Effect of the regrowth temperature of the cap layer grown successively on a Si focused ion beam (FIB) implanted GaAs surface on the dopant activation was investigated using a FIB/molecular beam epitaxy combined system. Indication of the reevaporation of the implanted Si was observed at high regrowth temperature and the fabrication process was improved by using low regrowth temperature. A high doping efficiency was obtained for the ion dose at about 1×1013 cm−2. Present results indicate the importance of controlling the regrowth condition to obtain high doping efficiency.

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GaAs Growth Using an MBE System Connected with a 100 kV UHV Maskless Ion Implanter

Cited by 48 publications

References 8 publications

Carrier distribution profiles in Si-doped layers in GaAs formed by focused ion beam implantation and successive overlayer growth

Carrier distribution profiles in Si-doped layers in GaAs formed by focused ion beam implantation and successive overlayer growth

Fabrication of in situ Ohmic contacts patterned in three dimensions using a focused ion beam during molecular beam epitaxial growth

Characterization of Si-doped layer in GaAs fabricated by a focused ion beam/molecular beam epitaxy combined system

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