GaAs E/D MESFET 1-kbit static RAM fabricated on silicon substrate

EPITAXY AND DEVICE APPLICATIONS OF GaAs ON Si

“…Figure 7(b) s h o w s t h e a c c e s s t i m e measurement waveforms. The measured access time of this SRAM ranged from6 to 14 ns, which is comparable to 3.5 toFigure 6. 1 K SRAM chip fabicated 12 ns observed for bulk GaAs in a GaAs on Si wafer.…”

“…However, it appears that this aspect of the warpage is not a serious problem. For a 3 u r n thick GaAs layer grown on a 600 um thick 2" Si substrate, the resulting warpage of less than 15 um is acceptable for submicron lithography [6]. The film cracking may be a serious problem, particulary for structures requiring thick layers, such as the laser diodes.…”

“…Among them the demonstration of a CMOS-LED IC [5] is particularly important for optical interconnection applications, which may solve the 1/0 problems associated with Si VLSI chip-to-chip communications. In a different application, the demonstration of functional 1 Kbit static RAMS (SRAMs) has been highly regarded in the GaAs IC area [6]. In this case the advantage of GaAs on Si materials is, the availability of large diameter Si wafers.…”

“…During the last few years many GaAs or AlGaAs discrete devices have been demonstrated using GaAs on Si layers [I-41. Also LED-CMOS monolithic integration [5] and large scale integrated (LSI) GaAs circuit fabrication [6] have been achieved. These results are encouraging for the promotion of GaAs on Si wafer engineering.…”

Crystallinity and Schottky diode characteristics of GaAs grown on Si by metalorganic chemical vapor deposition

“…The nonlinearities in the curves under large forward bias are caused by series resistance. The area of Schottky diode is 7.85X 10 -J cm 2 • (IrO) is proportional to V;·8, which suggests that the reverse current is caused by the generation current due to the recombination centers_ The generation current density (J gen ) due to the recombination centers in the depletion region is given by (3) where Te = liN/, Here 7e is the effective lifetime and Nt is the trap density. Similar temperature dependencies of 1-V characteristics are observed in the GaAs/Si grown by the two-step growth technique and by using the SLSs/GaP intermediate layer.…”