GaAs-Based Nanoneedle Light Emitting Diode and Avalanche Photodiode Monolithically Integrated on a Silicon Substrate

Chuang, Linus C.; Sedgwick, Forrest G.; Chen, Roger; Ko, Wai Son; Moewe, M.; Ng, Kar Wei; Tran, Thai-Truong D.; Chang-Hasnain, Connie J.

doi:10.1021/nl102988w

Cited by 99 publications

(98 citation statements)

References 36 publications

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“…Here we demonstrate, for the first time, highspeed operation of low-bias voltage nanoresonator APDs 22 . Figure 3e shows a smoothed S 21 response curve for the same device whose multiplication data is displayed in Fig.…”

Section: Resultsmentioning

confidence: 87%

“…3b, individual InGaAs nanoresonators can also function as photodetectors. Whereas our previous publication featured ensemble detectors with B30-50 nanoneedles 22 , our current detector uses only a single nanoresonator. This dramatically reduces device footprints from 40,000 to B1 mm 2 , paving the way towards ultra-dense photonic integration.…”

Section: Resultsmentioning

confidence: 99%

“…Meanwhile, PIC applications will likely necessitate electrically controllable optoelectronic devices. A few demonstrations of nanowire optoelectronics exist, but either single nanowires were removed from their native substrates [18][19][20] or nanowire ensembles were used 21,22 . Both scenarios make mass device integration extremely demanding.…”

mentioning

confidence: 99%

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Nanophotonic integrated circuits from nanoresonators grown on silicon

Chen

et al. 2014

Nat Commun

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Harnessing light with photonic circuits promises to catalyse powerful new technologies much like electronic circuits have in the past. Analogous to Moore's law, complexity and functionality of photonic integrated circuits depend on device size and performance scale. Semiconductor nanostructures offer an attractive approach to miniaturize photonics. However, shrinking photonics has come at great cost to performance, and assembling such devices into functional photonic circuits has remained an unfulfilled feat. Here we demonstrate an on-chip optical link constructed from InGaAs nanoresonators grown directly on a silicon substrate. Using nanoresonators, we show a complete toolkit of circuit elements including light emitters, photodetectors and a photovoltaic power supply. Devices operate with gigahertz bandwidths while consuming subpicojoule energy per bit, vastly eclipsing performance of prior nanostructure-based optoelectronics. Additionally, electrically driven stimulated emission from an as-grown nanostructure is presented for the first time. These results reveal a roadmap towards future ultradense nanophotonic integrated circuits.

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Section: Resultsmentioning

confidence: 87%

Section: Resultsmentioning

confidence: 99%

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Nanophotonic integrated circuits from nanoresonators grown on silicon

Chen

et al. 2014

Nat Commun

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“…Nonetheless, such low-power signals can be detected using advanced photodetector technologies. For example, various nanoscale avalanche photodiodes have been demonstrated in different material systems that can effectively detect low-level (even sub-pW) signals 9,20,21 . Another promising strategy for improving the responsivity of near-infrared photodetectors is via plasmonic concentration of light with resonant antennas or metallic structures 22,23 .…”

Section: Discussionmentioning

confidence: 99%

Ultrafast direct modulation of a single-mode photonic crystal nanocavity light-emitting diode

et al. 2011

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Low-power and electrically controlled optical sources are vital for next generation optical interconnect systems to meet strict energy demands. Current optical transmitters consisting of high-threshold lasers plus external modulators consume far too much power to be competitive with future electrical interconnects. Here we demonstrate a directly modulated photonic crystal nanocavity light-emitting diode (LED) with 10 GHz modulation speed and less than 1 fJ per bit energy of operation, which is orders of magnitude lower than previous solutions. The device is electrically controlled and operates at room temperature, while the high modulation speed results from the fast relaxation of the quantum dots used as the active material. By virtue of possessing a small mode volume, our LED is intrinsically single mode and, therefore, useful for communicating information over a single narrowband channel. The demonstrated device is a major step forward in providing practical low-power and integrable sources for on-chip photonics.

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“…Articles with topics on optical properties of NWs comprise a good portion in all the NW-related papers published in the recent decade, showing clear increasing trend in the number of papers on NW optics or photonics; they presently comprise almost three-fourth of the NW-related articles. Variety of NWs with a broad range of compositions have been used in diverse optoelectronic applications such as photodetectors , phototransistors [39][40][41][42][43][44], waveguides [45][46][47][48][49][50][51][52], solar cells [53][54][55][56][57][58][59][60][61][62][63], LEDs [64][65][66][67][68][69][70][71], and lasers [72][73][74][75][76][77][78][79]. In each of these applications, NWs have shown much better figures of merit compared to the thin film of the same material.…”

Section: Introductionmentioning

confidence: 99%

Nanowire Optoelectronics

Wang

Nabet

2015

Nanophotonics

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Semiconductor nanowires have been used in a variety of passive and active optoelectronic devices including waveguides, photodetectors, solar cells, light-emitting diodes (LEDs), lasers, sensors, and optical antennas. We review the optical properties of these nanowires in terms of absorption, guiding, and radiation of light, which may be termed light management. Analysis of the interaction of light with long cylindrical/hexagonal structures with subwavelength diameters identifies radial resonant modes, such as Leaky Mode Resonances, or Whispering Gallery modes. The two-dimensional treatment should incorporate axial variations in "volumetric modes," which have so far been presented in terms of Fabry-Perot (FP), and helical resonance modes. We report on finite-difference timedomain (FDTD) simulations with the aim of identifying the dependence of these modes on geometry (length, width), tapering, shape (cylindrical, hexagonal), core-shell versus core-only, and dielectric cores with semiconductor shells. This demonstrates how nanowires (NWs) form excellent optical cavities without the need for top and bottom mirrors. However, optically equivalent structures such as hexagonal and cylindrical wires can have very different optoelectronic properties meaning that light management alone does not sufficiently describe the observed enhancement in upward (absorption) and downward transitions (emission) of light in NWs; rather, the electronic transition rates should be considered. We discuss this "rate management" scheme showing its strong dimensional dependence, making a case for photonic integrated circuits (PICs) that can take advantage of the confluence of the desirable optical and electronic properties of these nanostructures.

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GaAs-Based Nanoneedle Light Emitting Diode and Avalanche Photodiode Monolithically Integrated on a Silicon Substrate

Cited by 99 publications

References 36 publications

Nanophotonic integrated circuits from nanoresonators grown on silicon

Nanophotonic integrated circuits from nanoresonators grown on silicon

Ultrafast direct modulation of a single-mode photonic crystal nanocavity light-emitting diode

Nanowire Optoelectronics

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