GaAs/AlGaAs distributed feedback transverse junction stripe laser grown by molecular beam epitaxy

We have fabricated InGaAs/AlGaAs strained-layer distributed-feedback grating-surface-emitting lasers with a buried grating structure. The device consists of a pumped distributed-feedback section terminated on both sides by unpumped distributed Bragg reflector sections. cw operation in a stable single longitudinal mode is achieved up to six times threshold. The threshold current density is ∼600 A/cm2. The far-field beam divergence is predominantly single lobed and diffraction limited. The spectral linewidth is 1.0 MHz at an output power of 8 mW.

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cw surface-emitting grating-coupled GaAs/AlGaAs distributed feedback laser with very narrow beam divergence

Mitsunaga

Kameya

Kojima

et al. 1987

Applied Physics Letters

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GaAs/AlGaAs distributed feedback transverse junction stripe laser grown by molecular beam epitaxy

Abstract: GaAs/AlGaAs transverse junction stripe lasers with a distributed feedback structure were fabricated. The cw threshold current was 27 mA at 20 °C. The laser operated in a pure single longitudinal mode at the wavelength of 867 nm.

Cited by 5 publications

References 10 publications

Semiconductor lasers for planar integrated optoelectronics

Semiconductor lasers for planar integrated optoelectronics

Demonstration of InGaAs/AlGaAs strained-layer distributed-feedback grating-surface-emitting lasers with a buried second-order grating structure

cw surface-emitting grating-coupled GaAs/AlGaAs distributed feedback laser with very narrow beam divergence

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