GaAs/AlAs superlattice as a proposed new reference material for sputter depth profiling

Auger electron spectroscopy depth profiling of a GaAs/AlAs superlattice sample was performed with Ar + ions of 100-500 eV using a compact floating-type low-energy ion gun. The practical etching rate of >1.5 nm min At the sputtering energy of 100 eV, remarkable improvement of the depth resolution at the leading edge (1z l = 1.3 nm) has been observed but this is followed by considerable deterioration at the trailing edge (1z t = 2.7 nm). Dynamic Monte-Carlo simulation for sputtering energies of 150-300 eV was performed for comparison. Although the Monte-Carlo simulation overestimates the depth resolutions by ∼0.6 nm larger than the relevant experimental values, it describes the energy dependence of the depth resolution with considerable success.

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“…15 The energy dependence of the depth resolution obtained is shown in Fig. 3 with the extrapolation line of Eqn.…”

Section: Resultsmentioning

confidence: 99%

High‐resolution Auger depth profiling by sub‐keV ion sputtering

Inoue

Shimizu

Lee

et al. 2005

Surface & Interface Analysis

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“…Especially, the dependence of the depth resolution on the primary energy of low-energy ions is one of the most important factors. However, most of the studies were reported for a primary energy of above 500 eV, 16,17 and systematic investigation in the low-energy region of below 500 eV is very limited.…”

Section: Introductionmentioning

confidence: 94%

Dependence of depth resolution on primary energy of low‐energy Ar⁺ Ions (100–1000 eV) in AES sputter depth profiling of GaAs/AlAs superlattice

Bungo

Nagatomi

Takai

2006

Surface & Interface Analysis

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The dependence of the depth resolution on the primary energy of low-energy Ar + ions in Auger electron spectroscopy (AES) sputter depth profiling of an ISO reference material GaAs/AlAs superlattice was investigated for the ion incidence angle of 50°from the sample surface normal. The depth resolution was found to improve as the square root of the primary energy of the ions as the primary energy decreased from 1000 to 200 eV. In contrast, a deterioration of the depth resolution was observed at 100 eV, which was induced by the difference in the etching rates between GaAs and AlAs and preferential sputtering. Further investigation of AES sputter depth profiling under irradiation of 100-eV Ar + ions at the incident angle of 70°revealed that the difference in the etching rate and preferential sputtering could be suppressed by changing the incident angle from 50°to 70°, leading to a depth resolution of ∼1.3 nm with 100 eV. The present results confirmed that glancing incidence is effective in achieving higher depth resolution from the point of view of the reduction of not only atomic mixing but also the difference in the etching rates and preferential sputtering. Careful attention is required for optimizing conditions of low-energy ion irradiation in sputter depth profiling using the GaAs/AlAs reference material.

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“…7 The projection range of implanted ions with low energy is smaller than that with high energy. 8 These results suggest that ion bombardment of low energy may cause the lesser the damage to the materials.…”

Section: Introductionmentioning

confidence: 98%

Alteration of Ti 2p XPS spectrum for titanium oxide by low‐energy Ar ion bombardment

Hashimoto

Tanaka

2002

Surface & Interface Analysis

189

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GaAs/AlAs superlattice as a proposed new reference material for sputter depth profiling

Cited by 29 publications

References 19 publications

High‐resolution Auger depth profiling by sub‐keV ion sputtering

High‐resolution Auger depth profiling by sub‐keV ion sputtering

Dependence of depth resolution on primary energy of low‐energy Ar⁺ Ions (100–1000 eV) in AES sputter depth profiling of GaAs/AlAs superlattice

Alteration of Ti 2p XPS spectrum for titanium oxide by low‐energy Ar ion bombardment

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GaAs/AlAs superlattice as a proposed new reference material for sputter depth profiling

Cited by 29 publications

References 19 publications

High‐resolution Auger depth profiling by sub‐keV ion sputtering

High‐resolution Auger depth profiling by sub‐keV ion sputtering

Dependence of depth resolution on primary energy of low‐energy Ar+ Ions (100–1000 eV) in AES sputter depth profiling of GaAs/AlAs superlattice

Alteration of Ti 2p XPS spectrum for titanium oxide by low‐energy Ar ion bombardment

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Dependence of depth resolution on primary energy of low‐energy Ar⁺ Ions (100–1000 eV) in AES sputter depth profiling of GaAs/AlAs superlattice