GaAs/AlAs resonant-tunneling diode for subharmonic mixers

Alkeev, N. V.; Аверин, С. В.; Dorofeev, A. A.; Gladysheva, N. B.; Torgashin, M. Yu.

doi:10.1134/s1063739710050057

Cited by 10 publications

(5 citation statements)

References 22 publications

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“…and The frequency dependence of the RTD impedance at room temperature in the frequency interval 0.1-40 GHz was used in [12] for the estimation of r S : the result is 0.7 Ω for the RTD with an area of 20 × 20 μm 2 . This makes it possible to calculate R d and Note that, at room temperature, R d differs from by less than 1% and differs from by less than 10%.…”

Section: (4)mentioning

confidence: 99%

“…Thus, the creation of the RTDs for the terahertz mixers with a relatively low optimal heterodyne power and a low noise factor is a topical problem. In [12], we created and studied RTDs based on the GaAs/AlAs heterosystem with a narrow (4 nm) quantum well and thin (1.7 nm) barriers. Such RTDs were used as the nonlinear elements of a subharmonic mixer.…”

Section: Introductionmentioning

confidence: 99%

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Shot noise of a high-speed resonance-tunneling diode based on the GaAs/AlAs heterosystem

Alkeev¹,

Аверин²,

Dorofeev³

et al. 2012

J. Commun. Technol. Electron.

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A method for the measurement of the shot noise of semiconductor diodes at low temperatures and frequencies of no less than 100 MHz is proposed. The technique is based on the Y factor method that is mod ified for the measurement in which the device under study is not matched with the measurement circuit. The shot noise of high speed resonance tunneling diodes (RTDs) based on the GaAs/AlAs heterosystem is ana lyzed. It is demonstrated that an increase in the bias voltage leads to an increase in the Fano factor from about 0.5 at low bias to values of greater than unity in the range of the negative differential conductance of the RTD. When the bias voltage further increases, the Fano factor decreases and becomes close to 0.5. At all of the tem peratures and bias voltages, a reliable decrease in the Fano factor to a level of less than 0.5 is not observed. We assume the sequential rather than coherent electron transport for the RTD based on the GaAs/AlAs hetero system.

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Section: (4)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Shot noise of a high-speed resonance-tunneling diode based on the GaAs/AlAs heterosystem

Alkeev¹,

Аверин²,

Dorofeev³

et al. 2012

J. Commun. Technol. Electron.

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“…The RTDs were designed to be used in millimeter-wave subharmonic mixers. The current–voltage characteristics and other parameters of RTDs are presented in [5]. A method for measuring the RTD impedance is described in [19].…”

Section: Experimental Technique and Data Processingmentioning

confidence: 99%

“…These mixers have been widely used in the intensively developing terahertz frequency range as electromagnetic radiation receivers (detectors) [4]. As shown in [5], RTD-based mixers have some advantages over the known mixers of this frequency range. The operation principle of RTDs is described in detail in [6].…”

Section: Introductionmentioning

confidence: 99%

Factors reducing the cut-off frequency of resonant tunneling diodes

Alkeev

Аверин

Dorofeev

et al. 2012

Int. J. Microw. Wireless Technol.

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The impedance dependence of resonant tunneling diodes (RTDs) based on the GaAs/AlAs heterosystem is investigated in the range of 0.1–40 GHz. The analysis shows that the impedance of about 90% of unbiased RTDs is well described by an equivalent circuit (EC) consisting of parallel-connected resistance and capacitance and an additional resistance connected in series with this parallel combination. When a bias voltage is applied to these RTDs, one needs a “quantum” inductance LQ to describe the impedance behavior. We find the value of LQ and calculate the delay time of electrons in the quantum well (QW) of an RTD. The impedance of the rest 10% of the RTDs is well described by an EC that takes into account the recharge of localized electron states at the heterointerfaces of the active layers. Expressions for the cut-off frequencies that take into account the delay of electrons in the QW and the localized electron states at the heterointerfaces are derived. It is shown that the delay of electrons in the QW and localized electron states at the heterointerfaces may significantly reduce the cut-off frequency of RTDs.

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“…Small tunneling time of electrons provides extremely high performance of the diode. Nonlinearity of RTD is conserved up to 10 THz [1,2].…”

Section: Introductionmentioning

confidence: 99%

Estimation of Thermal Destruction of AuGeNi Ohmic Contacts of Resonant Tunneling Diodes on the Basis of Nanoscale AlAs/GaAs Heterostructures

2015

2015 the 5th International Workshop on Computer Science and Engineering-Information Processing and Control Engineering

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In the present work the thermal destruction of AuGeNi ohmic contacts of resonant tunneling diodes using artificial aging was researched. The functional dependence of contact resistance of AuGeNi ohmic contacts of resonant tunneling diodes on time and temperature was put forward. This dependence is valid in case the temperatures are lower than 300 º C, it was determined for two parties of resonant tunneling diodes. Obtained results can be used for reliability prediction of resonant tunneling diodes and radio-electronic devices on its basis.

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GaAs/AlAs resonant-tunneling diode for subharmonic mixers

Cited by 10 publications

References 22 publications

Shot noise of a high-speed resonance-tunneling diode based on the GaAs/AlAs heterosystem

Shot noise of a high-speed resonance-tunneling diode based on the GaAs/AlAs heterosystem

Factors reducing the cut-off frequency of resonant tunneling diodes

Estimation of Thermal Destruction of AuGeNi Ohmic Contacts of Resonant Tunneling Diodes on the Basis of Nanoscale AlAs/GaAs Heterostructures

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