2009
DOI: 10.1063/1.3226667
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GaAs/AlAs coupled multilayer cavity structures for terahertz emission devices

Abstract: GaAs/AlAs coupled multilayer cavity structures are proposed as terahertz emission devices. Two cavity modes with an optical frequency difference in the terahertz region can be realized when two cavity layers are coupled by an intermediate distributed Bragg reflector multilayer. Interference between the enhanced light fields of the cavity modes has been demonstrated by the simultaneous injection of two cavity-mode lights using an ultrashort pulse laser. Such coupled multilayer cavity structures are promising fo… Show more

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Cited by 47 publications
(45 citation statements)
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“…The terahertz frequency splitting of the modes of cylindrical structures with both metallic core and cladding is analogous to that which can occur with suitably designed coupled planar cavities in semiconductor structures (see for example Ref. 32) and makes possible the production of radiation with a terahertz beat frequency. However, the waveguide geometry has the great advantage of facilitating flexible spatial control in the delivery of that radiation.…”
Section: Discussionmentioning
confidence: 73%
“…The terahertz frequency splitting of the modes of cylindrical structures with both metallic core and cladding is analogous to that which can occur with suitably designed coupled planar cavities in semiconductor structures (see for example Ref. 32) and makes possible the production of radiation with a terahertz beat frequency. However, the waveguide geometry has the great advantage of facilitating flexible spatial control in the delivery of that radiation.…”
Section: Discussionmentioning
confidence: 73%
“…[6][7][8] The properties of the system, although only a single cavity is involved, are similar to those of a more conventional dual cavity semiconductor structure. 9 We employ a BR designed to allow the transmission of light of wavelength near 1550 nm and TM polarization (magnetic field parallel to the prism surfaces) to give an experimental demonstration of the concept. In principle, such structures could be utilized for a variety of practical uses including filters, sensors, and terahertz frequency generation.…”
Section: G H Cross and S Brand A)mentioning
confidence: 99%
“…The second way for intensive elaboration is refinement of characteristics of traditional solid state electronic devices (EsmaeiliRad et al 2007;Huang et al 2003;Lai et al 2007;Kitada et al 2009;Lei et al 2009;Volocobinskaya et al 2001;Vasil'ev et al 2002). One of the questions of the refinement is increasing of sharpness of p-n junctions and manufacturing the devices as more shallow (Andronov et al 1998;Sisiyany et al 2002).…”
Section: Introductionmentioning
confidence: 99%