Ga2O3 solar-blind position-sensitive detectors

Li, Kaiyong; Yang, Xun; Tian, Yongzhi; Chen, Yancheng; Lin, Chao-Nan; Zhang, Zhenfeng; Xu, Zheng; Zang, Jinhao; Shan, Chongxin

doi:10.1007/s11433-020-1581-4

Cited by 32 publications

(14 citation statements)

References 46 publications

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“…Four‐quadrant position‐sensitive detectors have been developed by Li et al. [ 153 ] comprising four identical MSM photodetector components which show high uniformity, fast response speeds and large signal‐to‐noise ratio, thereby extending the use to real‐time monitoring of solar‐blind beams.…”

Section: Varied Device Geometries—working Principle With Examplesmentioning

confidence: 99%

“…700 °C grown film based PD showed the highest performance with a dark current of 10.6 pA, responsivity of 18.23 A W −1 and a fast response time in milliseconds. Four-quadrant position-sensitive detectors have been developed by Li et al [153] comprising four identical MSM photodetector components which show high uniformity, fast response speeds and large signal-to-noise ratio, thereby extending the use to real-time monitoring of solar-blind beams.…”

Section: Msm Photodetectorsmentioning

confidence: 99%

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A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Kaur

Kumar

2021

Advanced Optical Materials

265

153

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With the use of UV‐C radiation sterilizers on the rise in the wake of the recent pandemic, it has become imperative to have health safety systems in place to curb the ill‐effects on humans. This requires detection systems with suitable spectral response to the “invisible to the naked eye” radiation leaks with utmost sensitivity and swiftness. State of the art deep‐UV photodetectors based on the wide bandgap material gallium oxide have achieved responsivities up to few hundred A W−1 while the minimum response time achieved is few hundred nanoseconds. However, due to the trade‐off between these two key parameters, the ultimate performance of the photodetectors remains inadequate. The focus here is to give a thorough review of the gallium oxide based photodetectors, their recent progress and future prospects. This review highlights the fundamental physics and the key parameters such as dark current, responsivity, and response time with their dependence on the material properties. Exploration of the reasons behind current scenario in the field of gallium oxide is comprehensively and critically analyzed. The key challenges which limit device performance and inhibit the realization of real‐world practical detectors are also described. The lacunae currently plaguing the field is also discussed with possible remedial solutions.

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Section: Varied Device Geometries—working Principle With Examplesmentioning

confidence: 99%

Section: Msm Photodetectorsmentioning

confidence: 99%

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Kaur

Kumar

2021

Advanced Optical Materials

265

153

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“…[ 1,2 ] β‐Ga 2 O 3 have demonstrated excellent performance, such as, large breakdown field (theoretical value ~8 MV cm −1 ), [ 3 ] high transmittance in ultraviolet region (80%) [ 4 ] and large Baliga's figure of merit (FOM) (3444). [ 5 ] These properties indicate that β‐Ga 2 O 3 is a potential material for applications in gas sensors, [ 6 ] solar‐blind ultraviolet photodetectors, [ 7,8 ] Schottky barrier diode (SBD), [ 9 ] metal oxide semiconductor field‐effect transistors (MOSFETs), [ 10,11 ] etc. [ 12 ]…”

Section: Introductionmentioning

confidence: 99%

Investigation of β‐Ga₂O₃ Film Growth Mechanism on c‐Plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Feng

Cheng

et al. 2020

Physica Status Solidi (a)

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Growth mechanism and temperature of monoclinic gallium oxide (β‐Ga2O3) films grown by ozone molecular beam epitaxy (MBE) are investigated herein. Phase‐pure (2true¯01) β‐Ga2O3 films can be grown on c‐plane sapphire substrates when the growth temperature exceeds 500 °C, and the grain size increases with the increase in the growth temperature. Sixfold rotational domains are obtained based on the epitaxial relationships (Ga2O3 < 010>//Al2O3<11true¯00> and Ga2O3 < 102>//Al2O3 < 11true2¯0>). For the film grown at 700 °C, the threefold facets are observed for the first time, which are resulted from the easy‐cleaved (100) plane and rotational domains. In addition, the cathodoluminescence spectra of the β‐Ga2O3 films show that the proportion of ultraviolet emission increases with the increase in the growth temperature, which is attributed to the modulation of defect. Finally, the growth rate can be modulated by the ratio of Ga flux and ozone pressure. A reference is provided for heteroepitaxy of β‐Ga2O3 films and better understanding of the ozone MBE growth mechanism of oxides.

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“…工作在 200-280 nm 深紫外波段的日盲紫外光电探测器因具有背景噪声低、虚警率低、探测灵敏度高、抗辐射能力强等优点，在导弹制导、气象监测、火灾预警和生物医疗等军事和民生领域具有广泛的应用前景，近年来受到国内外研究者的广泛关注 [1][2][3] 日盲光电探测器性能的进一步提升 [4][5] 。此外，较大的带隙值无法覆盖整个日盲波段且带隙难以调控以及大面积材料难以制备等问题，也限制了金刚石日盲紫外光电探测器的应用领域 [6] 。得益于合适的带隙值 (β-Ga 2 O 3 )被认为是日盲光电探测器的最佳天然候选材料 [7] 。到目前为止，基于氧化镓材料的日盲光电探测器已受到了研究者的广泛研究且在探测器性能方面取得了较大的进展 [8][9][10]…”

Section: 引言unclassified

The performance of Al plasmon enhanced β-Ga<sub>2</sub>O<sub>3</sub> solar-blind photodetector

Yu¹,

Li²,

Yao³

et al. 2022

Sci. Sin.-Phys. Mech. Astron.

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The surface plasmon effect based on metal nanoparticles can enhance the local electric field strength and exhibit excellent light trapping capabilities, which can effectively improve the performance of optoel ectronic devices. In this study, combined with the Finite Difference Time Domain (FDTD) method and magnetron sputtering technology, the effects of metallic Al nanoparticles on the photoelectric characteristics of β-Ga 2 O 3 solar-blind photodetectors are studied theoretically and experimentally. The results show that Al nanoparticles with a radius of 30 nm can produce an LSPR effect under 254 nm solar-blind ultraviolet light. Due to the LSPR effect of Al NPs, the spectral responsivity and detectivity of the β-Ga 2 O 3 solar-blind photodetector have been increased by 4.7 times and 6 times, respectively, and the dark current of the device has been reduced to 62.5% of the original value. This study provides a theoretical and experimental basis for the application of Al NPs in the solar-blind band, and provides a new method for further improving the performance of solar-blind photodetectors.

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Ga2O3 solar-blind position-sensitive detectors

Cited by 32 publications

References 46 publications

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Investigation of β‐Ga₂O₃ Film Growth Mechanism on c‐Plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

The performance of Al plasmon enhanced β-Ga<sub>2</sub>O<sub>3</sub> solar-blind photodetector

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Ga2O3 solar-blind position-sensitive detectors

Cited by 32 publications

References 46 publications

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Investigation of β‐Ga2O3 Film Growth Mechanism on c‐Plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

The performance of Al plasmon enhanced &beta;-Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; solar-blind photodetector

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Investigation of β‐Ga₂O₃ Film Growth Mechanism on c‐Plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

The performance of Al plasmon enhanced β-Ga<sub>2</sub>O<sub>3</sub> solar-blind photodetector