Ga₂O₃ nanowires preparation at atmospheric pressure

Abstract

An attempt has been undertaken to produce gallium oxide nanowires by thermal synthesis from metallic gallium source at atmospheric pressure. Silicon substrates of (1 0 0) and (1 1 1) orientation with and without silicon oxide layers (0.5 µm) were used as support. Evaporated thin gold films were deposited on the top of those silicon carriers as a catalytic agent. After thermal treatment by Rapid Thermal Processing RTP (at various temperatures and times), which was applied to make small Au islands with the diameters of about several tens of nanometers, the substrate surfaces were observed by SEM. The Ga 2 O 3 syntheses were made at various conditions: time, temperature and gas mixture were changed. As a result, monoclinic gallium oxide β-Ga 2 O 3 nanostructures with dominant [1 1 1] and [0 0 2] growth directions were grown. The obtained nanostructures of several tens micrometers length were studied by SEM, PL and X-ray methods.

One-Step Preparation of Si-Doped Ultra-Long β-Ga2O3 Nanowires by Low-Pressure Chemical Vapor Deposition

“…During annealing, the Au film shrinks into small particles, the amorphous Al 2 O 3 film becomes partially crystallized, and the Si element of the substrate penetrates through the Al 2 O 3 film out-diffusion toward the surface. Si/SiO2 100 VLS [32] 2019 Al2O3 ~100 100-500 VS [16] 2019 Si/SiO2 20-100 VLS [33] 2019 Si Si 30-70 70-160 LPCVD [34] 2020 GaAs 10-100 25-40 Oxidation [35] 2020 Si 50-900 HVPG [1] 2020 Al2O3 Si >6 50-200 MOCVD [30] 2021 Al2O3 >100 80-300 VLS [36] 2022 Quartz 30-100 200-1000 Oxidation [37] 2022 Al2O3 Sn >1000 >1000 CVD [38] 2022 Si 7-25 CVD [31] This work Si/Al2O3 Si >300 30-100 LPCVD…”