2020 27th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) 2020
DOI: 10.23919/am-fpd49417.2020.9224491
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Ga-Sn-O Thin Film Synapse for Neuromorphic Device

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“…A voltage is applied to the bottom electrode and scanned to either + 3.5 V or − 3.5 V multiple times, and the electric current is measured. The characteristic uniformity of general AOS devices has been also investigated [21][22][23] .…”
Section: Methodsmentioning
confidence: 99%
“…A voltage is applied to the bottom electrode and scanned to either + 3.5 V or − 3.5 V multiple times, and the electric current is measured. The characteristic uniformity of general AOS devices has been also investigated [21][22][23] .…”
Section: Methodsmentioning
confidence: 99%