Ga segregation in Czochralski-Si crystal growth with B codoping

Solute segregation in a lid driven cavity: Effect of the flow on the boundary layer thickness and solute segregation

“…[1][2][3]. In crucible of large dimensions, convection often dominates solute transport, due to the generally low values of the Fickian diffusion coefficients.…”

Ga segregation during Czochralski-Si crystal growth with Ge codoping

“…For comparison, the calculated Ga/B-codoped impurity pair formation probability is shown in Fig. 3(b) [3]. The simple probability calculation indicates that a sharply increases near 10 20 cm À 3 .…”

“…This result was different from that of Ga/B-codoped growth. With Ga/B codoping, k Ga eff increased from 0.008 to 0.011 when C B L0 exceeded 1 Â 10 19 cm À 3 [3]. To understand this difference, we investigated the segregation behavior based on a thermodynamic analysis of the segregation coefficients for codoped impurities [3].…”

“…In our previous study [3], we developed a new model of k 0 for codoped impurities by taking into account the effect of neighboring codoped impurities in the Si lattice. Here, we consider the configuration of Ga, Ge, and Ga-Ge pairs in the Si lattice.…”

“…We previously presented a method of adding another impurity element, in addition to Ga, into a Si crystal to increase the segregation coefficient of Ga. For example, we reported an increase in the segregation coefficient of Ga in Ga/B-codoped CZ-Si crystal growth when B was doped at more than 10 19 cm À 3 into the Si melt [3]. However, although the segregation coefficient of Ga increased, the minority carrier lifetime was very low at such a high B doping concentration, presenting a serious problem for solar cell application.…”