Ga-Rich Limit of Surface Reconstructions on GaAs(001): Atomic Structure of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo stretchy="false">(</mml:mo><mml:mn>4</mml:mn><mml:mo>×</mml:mo><mml:mn>6</mml:mn><mml:mo stretchy="false">)</mml:mo></mml:math>Phase

Ohtake, Akihiro; Kocán, Pavel; Seino, K.; Schmidt, Wolf Gero; Koguchi, Nobuyuki

doi:10.1103/physrevlett.93.266101

Cited by 57 publications

(44 citation statements)

References 29 publications

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“…As T is decreased, a transition to the less Ga-rich (6×6) is observed at around 525 °C which is separated by a region of phase coexistence. This is in good agreement with the observations of others who observe these phases at high and low temperatures, respectively, during annealing [1,5,9,11]. We note that the relative intensities of the (6×6) LEED spots without droplets are very different from the (6×6)D phase observed with droplets present.…”

supporting

confidence: 81%

“…On decreasing T below 540 °C, the dominant mixture is a combination of c(8×2) and (4×6). This is surprising since it is believed the ultra-rich Ga (4×6) phase can only be obtained following deposition of Ga [1,11,15]. Eventually, below 530 °C, a new unforeseen c(2×12) phase appears as shown in panel 2(c), coexisting with (4×6).…”

mentioning

confidence: 87%

“…For the temperature range of interest, the droplet contains less than 0.3 % As and so l Ga  is well approximated by that of pure liquid Ga which can be evaluated from thermodynamic data [28]. There has been considerable interest in seeking the most extreme Ga-rich phase of GaAs (001) [1,4,5,11]. (4×6) is presently regarded as the most Ga-rich phase [1,11].…”

Section: To Obtain D Gamentioning

confidence: 99%

“…There has been considerable interest in seeking the most extreme Ga-rich phase of GaAs (001) [1,4,5,11]. (4×6) is presently regarded as the most Ga-rich phase [1,11]. However, our capability to control chemical potential via T in the presence of a droplet reservoir and establish equilibrium within an ultra-rich Ga phase space has produced an unexpected c(2×12) phase which is seen to coexist with (4×6) below 530 °C.…”

Section: To Obtain D Gamentioning

confidence: 99%

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Novel GaAs surface phases via direct control of chemical potential

Zheng

Tersoff²,

Tang

et al. 2016

Phys. Rev. B

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supporting

confidence: 81%

mentioning

confidence: 87%

Section: To Obtain D Gamentioning

confidence: 99%

Section: To Obtain D Gamentioning

confidence: 99%

See 2 more Smart Citations

Novel GaAs surface phases via direct control of chemical potential

Zheng

Tersoff²,

Tang

et al. 2016

Phys. Rev. B

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“…GaAs(001) surfaces have been studied extensively over the last decades and provide a large number of well-understood surface reconstructions with different stoichiometries. [10][11][12][13][14] As a consequence, the GaAs(001) surface reconstructions vary particularly in terms of the occupation of their respective surface dangling bonds and thus the number of electrophilic and/or nucleophilic surface sites. The different GaAs(001) surface reconstructions, therefore, form an ideal model system to study the influence of electrophilic and/or nucleophilic surface sites on the adsorption mechanism of organic molecules.…”

Section: Introductionmentioning

confidence: 99%

Electrophilic surface sites as precondition for the chemisorption of pyrrole on GaAs(001) surfaces

Bruhn

Fimland

Vogt

2015

The Journal of Chemical Physics

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Originally published as:Bruhn, T., Fimland, B.-O., Vogt, P. (2015): Electrophilic surface sites as precondition for the chemisorption of pyrrole on GaAs (001) We report how the presence of electrophilic surface sites influences the adsorption mechanism of pyrrole on GaAs(001) surfaces. For this purpose, we have investigated the adsorption behavior of pyrrole on different GaAs(001) reconstructions with different stoichiometries and thus different surface chemistries. The interfaces were characterized by x-ray photoelectron spectroscopy, scanning tunneling microscopy, and by reflectance anisotropy spectroscopy in a spectral range between 1.5 and 5 eV. On the As-rich c(4 × 4) reconstruction that exhibits only nucleophilic surface sites, pyrrole was found to physisorb on the surface without any significant modification of the structural and electronic properties of the surface. On the Ga-rich GaAs(001)-(4 × 2)/(6 × 6) reconstructions which exhibit nucleophilic as well as electrophilic surface sites, pyrrole was found to form stable covalent bonds mainly to the electrophilic (charge deficient) Ga atoms of the surface. These results clearly demonstrate that the existence of electrophilic surface sites is a crucial precondition for the chemisorption of pyrrole on GaAs(001) surfaces. C 2015 AIP Publishing LLC. [http://dx

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Semiconductor‐insulator Interfaces, High κ Dielectrics on (In)GaAs

Lin

Chang

et al. 2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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Recent development of high κ dielectric oxides on (In) GaAs is reviewed in the fields of electronic structure and electric performance; this includes studies of (In) GaAs surfaces with various surface reconstructions, different orientations, and Indium contents, and of high κ/(In) GaAs interfaces. The oxide deposition was carried out using atomic‐layer deposition ( ALD ) and molecular beam epitaxy ( MBE ) via ex‐situ or in‐situ methods. For the former approach, the semiconductor surfaces prior to the oxide deposition were obtained via chemical, arsenic‐cap or annealing treatments. For the latter, the high k's were deposited on pristine freshly MBE ‐grown (In) GaAs surfaces without any treatments. Surface being treated or not clearly determines the quality of the oxide interface which delivers different interfacial electronic structure and electric performance. Without exception, the ex‐situ treated samples show remnant native oxides, which are never found in the in‐situ samples. The electronic structure has been investigated using photoemission measurements, in which the photon energy was provided by X ‐ray and synchrotron radiation. The discussion on high κ/(In) GaAs interfaces has been further extended to the electrical characterization including extraction of interfacial trap densities ( D it 's). Especially, the distinct electrical characteristics of the In 0.2 Ga 0.8 As metal‐oxide‐semiconductor capacitors ( MOSCAPs ) using MBE ‐ Ga 2 O 3 ( Gd 2 O 3 ) and ALD ‐ Al 2 O 3 as the gate are elucidated. Finally, a summary and bench‐marking of the recent advances on enhancement mode III ‐ V (In) GaAs MOSFETs is given, which reveals the great potential of inversion‐channel (In) GaAs MOSFETs for ultimate complementary MOS ( CMOS ) applications.

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Ga-Rich Limit of Surface Reconstructions on GaAs(001): Atomic Structure of the(4×6)Phase

Cited by 57 publications

References 29 publications

Novel GaAs surface phases via direct control of chemical potential

Novel GaAs surface phases via direct control of chemical potential

Electrophilic surface sites as precondition for the chemisorption of pyrrole on GaAs(001) surfaces

Semiconductor‐insulator Interfaces, High κ Dielectrics on (In)GaAs

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