Ga-modified As2Se3–Te glasses for active applications in IR photonics

Numerical and experimental investigation of mid-infrared laser action in resonantly pumped Pr3+ doped chalcogenide fibre

“…These characteristics make chalcogenide glasses an attractive host material for rare-earth ions (Seddon et al 2010;Tao et al 2015). Recent publications show that there is a particularly large interest in mid-infrared fluorescence from the ( 3 F 2 , 3 H 6 ) → 3 H 5 (3.7-4.2 μm), and 3 H 5 → 3 H 4 (4.3-5.0 μm) transitions of Pr 3+ doped selenide glass Sójka et al 2014;Karaksina et al 2016a, b;Shpotyuk et al 2015;Chahal et al 2016;Shaw et al 2001). This is because Pr 3+ ions in chalcogenide glass have a high pump absorption cross-section, and also because Pr 3+ can be pumped with commercially available laser diodes.…”

Nanoscale Inhomogeneities Mapping in Ga-Modified Arsenic Selenide Glasses

“…In respect to our previous research on melt-quenched alloys in Ga x (As 0.40 Se 0.60 ) 100−x system [8, 12, 14], the phase decomposition processes accompanied by Ga 2 Se 3 crystallization occur at 4 at.% of Ga. Thus, glasses with no more than 3 at.% of Ga were suggested to be successfully used for further RE doping [8].…”

“…In the last decades, it was shown that due to purposeful rare-earth (RE) doping, these glasses could be also employed for a number of very important active device applications [3, 4]. In this case, the mid-IR light can be initiated by emission of excited RE ions (such as Pr 3+ , Er 3+ , Dy 3+ , Tb 3+ ) on different wavelengths, thus creating the remote sources of light [5–8]. From purely implementation point, it is important to achieve a high enough concentration of RE ions in ChG. One of best solutions relies on introducing Ga (or In) into ChG matrix, permitting dissolution of higher ratio of RE dopants [8–13].…”

“…In this case, the mid-IR light can be initiated by emission of excited RE ions (such as Pr 3+ , Er 3+ , Dy 3+ , Tb 3+ ) on different wavelengths, thus creating the remote sources of light [5–8]. From purely implementation point, it is important to achieve a high enough concentration of RE ions in ChG. One of best solutions relies on introducing Ga (or In) into ChG matrix, permitting dissolution of higher ratio of RE dopants [8–13]. However, the Ga additions may essentially restrict glass-forming ability in many ChG systems [8, 11, 13–15] provoking parasitic devitrification processes at a nanoscale through phase separation, crystallite nucleation, growth, and extraction (uncontrolled spontaneous crystallization).…”

“…From purely implementation point, it is important to achieve a high enough concentration of RE ions in ChG. One of best solutions relies on introducing Ga (or In) into ChG matrix, permitting dissolution of higher ratio of RE dopants [8–13]. However, the Ga additions may essentially restrict glass-forming ability in many ChG systems [8, 11, 13–15] provoking parasitic devitrification processes at a nanoscale through phase separation, crystallite nucleation, growth, and extraction (uncontrolled spontaneous crystallization). Thus, it was shown, that in case of glassy As 2 Se 3 it is not possible to introduce more than 3 at.% of Ga without such intrinsic structural decomposition, which essentially influences the ChG functionality [8, 12, 14].…”