2011
DOI: 10.1147/jrd.2011.2158762
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Ga droplet surface dynamics during Langmuir evaporation of GaAs

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Cited by 13 publications
(7 citation statements)
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“…Ga droplets were created by annealing above the planar surface congruent evaporation temperature at 670 C and were imaged using MEM. [13][14][15][16] Droplet motion was observed 14,15 and movies of coalescence events were recorded. The sample was then quenched to room temperature and droplets were imaged ex situ by atomic force microscopy (AFM) in non-contact mode.…”
mentioning
confidence: 99%
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“…Ga droplets were created by annealing above the planar surface congruent evaporation temperature at 670 C and were imaged using MEM. [13][14][15][16] Droplet motion was observed 14,15 and movies of coalescence events were recorded. The sample was then quenched to room temperature and droplets were imaged ex situ by atomic force microscopy (AFM) in non-contact mode.…”
mentioning
confidence: 99%
“…The droplets appear as uniform dark discs somewhat larger than the actual droplet, surrounded by a concentric bright halo. 14,15 In panel (a), droplet 1 translates across the substrate and coalesces with droplet 2. The coalescence event is rapid, occurring in less than a movie frame (0.1 s) giving a minimum contact line velocity of 18 lms…”
mentioning
confidence: 99%
“…Gallium‐based alloys can be found in a liquid form at both room and elevated temperatures. At high temperatures (>600 °C), researchers have controlled the motion of liquid gallium arsenide via chemical decomposition of the alloy, controlling the direction of motion via surface crystallinity of the substrate . Other high‐temperature gallium alloys have been controlled and directed by surface roughness .…”
Section: Contact Angles Of Galinstan Droplets On Various Substrates mentioning
confidence: 99%
“…Considerable attention has been paid to the dynamics of metallic droplets on surfaces since then. This includes the motion of Ga droplets on GaAs under incongruent evaporation conditions [2,3], thermomigration of PtSi droplets on stepped Si(111) and Si(100) [4][5][6], AuSi-and AuGe-droplets on various Si and Ge substrates [7,8], AuGe on Ge(110) [9], and, recently, electromigration of AuGe [10]. The surface studies were motivated by interest in possibilities for bottom-up fabrication of nanostructures, catalysis of standing up [11] and lying down nanowires [12,13] on surfaces, and, last but not least, genuine interest in the complex physics of the motion of metallic droplets on surfaces.…”
Section: Introductionmentioning
confidence: 99%