Ga co‐doping in Cz‐grown silicon ingots to overcome limitations of B and P compensated silicon feedstock for PV applications

Forster, Maxime; Fourmond, Erwann; Einhaus, Roland; Lauvray, H.; Kraiem, J.; Lemiti, M.

doi:10.1002/pssc.201000330

Cited by 39 publications

(16 citation statements)

References 11 publications

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“…This finding was more recently contradicted by a study of the BOrelated light-induced degradation of compensated Si solar cells, of which the severity was found to depend on the total B concentration [6]. With Ga co-doping offering an efficient tool for compensation engineering [7][8][9], it becomes important to clarify whether compensation can effectively be employed to mitigate the impact of the BO defect and thus improve the final performance of UMG-Si solar cells.…”

Section: Introductionmentioning

confidence: 66%

Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells

Forster¹,

Wagner

Degoulange³

et al. 2014

Solar Energy Materials and Solar Cells

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Abstract:This paper deals with the impact of dopant compensation on the degradation of carrier lifetime and solar cells performance due to the boron-oxygen defect. The boron-oxygen defect density evaluated by lifetime measurements before and after degradation is systematically found proportional to the total boron concentration, showing that compensation cannot reduce light-induced degradation. This result is confirmed by a comparison of upgraded-metallurgical grade silicon solar cells having identical boron, oxygen and carbon but different compensation levels and in which the degradation is found more severe when the compensation is stronger.

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Section: Introductionmentioning

confidence: 66%

Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells

Forster¹,

Wagner

Degoulange³

et al. 2014

Solar Energy Materials and Solar Cells

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“…In any case, the implications of this result for solar cells are positive. For example, it shows that the addition of Ga during crystallization of UMG-Si, used to control the Si doping uniformity, 17 does not lead, as would be expected by Voronkov and Falster's model, to a stronger degradation. Finally, the measured linear dependence of R gen on p 0 2 supports a model for the defect formation based on the activation of a latent defect, rather than due to the diffusion and trapping of O 2i .…”

mentioning

confidence: 83%

Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron

Forster

Fourmond

Rougieux

et al. 2012

Applied Physics Letters

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We study the boron-oxygen defect in Si co-doped with gallium and boron with the hole density 10 times higher than the boron concentration. Instead of the linear dependence of the defect density on the hole density observed in boron and phosphorus compensated silicon, we find a proportionality to the boron concentration. This indicates the participation of substitutional, rather than interstitial, boron in the defect complex. The measured defect formation rate constant is proportional to the hole density squared, which gives credit to latent defect models against defect reactions limited by the diffusion and trapping of oxygen dimers by boron atoms.

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“…Compensation doping has been found to be an efficient way to control ingot resistivity when using solar-grade silicon feedstocks [21]- [23]. Carrier recombination, which is being driven by the net doping rather than the sum of the dopant concentrations, can be improved by compensation [24].…”

Section: Measuring the Influence Of Compensationmentioning

confidence: 99%

A Contactless Method for Determining the Carrier Mobility Sum in Silicon Wafers

Rougieux

Zheng

Thiboust

et al. 2012

IEEE J. Photovoltaics

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Abstract-In this paper, we present a new method to determine the simultaneous injection and temperature dependence of the sum of the majority and minority carrier mobilities in silicon wafers. The technique is based on combining transient and quasi-steadystate photoconductance measurements. It does not require a full device structure or contacting but only adequate surface passivation. The mobility dependence on both carrier injection level and temperature, as measured on several test samples, is discussed and compared with well-known mobility models. The potential of this method to measure the impact of dopant concentration, compensation ratio, injection level, and temperature on the mobility is demonstrated.

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Ga co‐doping in Cz‐grown silicon ingots to overcome limitations of B and P compensated silicon feedstock for PV applications

Abstract: The first crystallographically characterized phosphonium yldiide 2 was obtained in a simple reaction by addition of n‐butyllithium to the stable phosphanyl(silyl)carbene 1. R=cHex2N.

Cited by 39 publications

References 11 publications

Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells

Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells

Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron

A Contactless Method for Determining the Carrier Mobility Sum in Silicon Wafers

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