Ga&amp;lt;inf&amp;gt;1-x&amp;lt;/inf&amp;gt;Al&amp;lt;inf&amp;gt;x&amp;lt;/inf&amp;gt;Sb avalanche photodiodes: Resonant impact ionization with very high ratio of ionization coefficients

Hildebrand, O.; Kuebart, W.; Benz, K.W.; Pilkuhn, M. H.

doi:10.1109/jqe.1981.1071068

Cited by 145 publications

(30 citation statements)

References 21 publications

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“…22 At this alloy composition, the equality between the material's bandgap (E g ) and spin-orbit splitting (∆) induces a large, desirable asymmetry between the electron and hole ionization coefficients, an effect which has also been previously investigated in the GaAlSb material system. 23 Because the HgCdTe alloy composition at which optimal low-noise avalanche multiplication occurs, x = 0.73, is different from that at which efficient optical absorption of 1.55 µm radiation occurs, x = 0.6, a separate absorption and multiplication-APD (SAM-APD) architecture must be adopted. When ohmic contact layers are added, the range of x-values within a single HgCdTe SAM-APD device structure can be as wide as x = 0.2-0.8, a considerably broader range than typically encountered during the growth of conventional passive MWIR and LWIR devices.…”

Section: Mbe Growth Of Hgcdte Avalanche Photodiodesmentioning

confidence: 99%

Advances in HgCdTe-based infrared detector materials: the role of molecular-beam epitaxy

Lyon

Rajavel

Roth

et al. 2001

Materials for Infrared Detectors

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Since its initial synthesis and investigation more than 40 years ago, the HgCdTe alloy semiconductor system has evolved into one of the primary infrared detector materials for high-performance infrared focal-plane arrays (FPA) designed to operate in the 3-5 µm and 8-12 µm spectral ranges of importance for thermal imaging systems. Over the course of the past decade, significant advances have been made in the development of thin-film epitaxial growth techniques, such as molecular-beam epitaxy (MBE), which have enabled the synthesis of IR detector device structures with complex doping and composition profiles. The central role played by in situ sensors for monitoring and control of the MBE growth process are reviewed. The development of MBE HgCdTe growth technology is discussed in three particular device applications: avalanche photodiodes for 1.55 µm photodetection, megapixel FPAs on Si substrates, and multispectral IR detectors.

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Section: Mbe Growth Of Hgcdte Avalanche Photodiodesmentioning

confidence: 99%

Advances in HgCdTe-based infrared detector materials: the role of molecular-beam epitaxy

Lyon

Rajavel

Roth

et al. 2001

Materials for Infrared Detectors

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“…The GaSb lattice parameter is matched with various ternary and quaternary III-V compounds covering bandgaps from 0.3 eV to 1.58 eV 1 . Consequently, GaSb-based binary and ternary alloys are important candidates for applications in laser diodes with low threshold currents, photodetectors with high quantum efficiencies, high-frequency devices, superlattices with tailored optical characteristics, high efficiency thermophotovoltaic (TPV) devices and booster cells in tandem solar sell arrangements [2][3][4][5][6][7] . These applications have stimulated interest in GaSb for basic research as well as device fabrication.…”

Section: Introductionmentioning

confidence: 99%

Ohmic contacts to n-type GaSb grown on GaAs by the interfacial misfit dislocation technique

et al. 2013

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Low resistance ohmic contacts have been successfully fabricated on n-GaSb layers grown by MBE on semi-insulating (SI) GaAs substrates using the Interfacial Misfit Dislocation (IMF) technique. Although intended for photovoltaic applications, the results are applicable to many antimonide-based devices. The IMF technique enables the growth of epitaxial GaSb layers on semi-insulating GaAs substrates resulting in vertical current confinement not possible on unintentionally doped ~ 1e17 cm -3 p-doped bulk GaSb. Results for low resistance ohmic contacts using NiGeAu, PdGeAu, GeAuNi and GeAuPd metallizations for various temperatures are reported. Specific transfer resistances down to 0.12 Ω-mm and specific contact resistances of < 2e-6 Ω-cm 2 have been observed.

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“…The narrow energy gap of InGaAsSb is useful for long-wavelength photo devices [4] [5]. The high value of the ratio of the hole and electron ionization coefficients makes AlGaSb be a good material for an avalanche photodiode [6] [7]. After all, GaSb is important to product many kinds of devices as a basic material.…”

Section: Introductionmentioning

confidence: 99%

The effect of annealing temperature on electrical properties of Au/n-GaSb Schottky contacts

Liu

Wei

Fang

et al. 2012

2012 International Conference on Optoelectronics and Microelectronics

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Au film (200nm) is deposited on Te doped n-GaSb grown to form metal/ semiconductor contacts, and these contacts are quickly annealed at 200 ℃-400 ℃ in the ambient gas of N 2 . It is found that these contacts show rectifying Schottky behavior by I-V measurement. The characteristic of the contact is improved when annealed under the appropriate temperature. It leaded to increase the barrier height and reduce both the ideality factor and the leakage current.

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Ga<inf>1-x</inf>Al<inf>x</inf>Sb avalanche photodiodes: Resonant impact ionization with very high ratio of ionization coefficients

Cited by 145 publications

References 21 publications

Advances in HgCdTe-based infrared detector materials: the role of molecular-beam epitaxy

Advances in HgCdTe-based infrared detector materials: the role of molecular-beam epitaxy

Ohmic contacts to n-type GaSb grown on GaAs by the interfacial misfit dislocation technique

The effect of annealing temperature on electrical properties of Au/n-GaSb Schottky contacts

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