g Factors and Spin-Lattice Relaxation of Conduction Electrons

Yafet, Y.

doi:10.1016/s0081-1947(08)60259-3

Cited by 673 publications

(408 citation statements)

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“…The effective g-factor is determined from the effective Zeeman splitting E * Z through g * µ B H = E * Z , 76) so that we obtain the effective g-factor…”

Section: Wolff Hamiltonian Under a Magnetic Fieldmentioning

confidence: 99%

Transport Properties and Diamagnetism of Dirac Electrons in Bismuth

2015

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Bismuth crystal is known for its remarkable properties resulting from particular electronic states, e. g., the Shubnikovde Haas effect and the de Haas-van Alphen effect. Above all, the large diamagnetism of bismuth had been a long-standing puzzle soon after the establishment of quantum mechanics, which had been resolved eventually in 1970 based on the effective Hamiltonian derived by Wolff as due to the interband effects of a magnetic field in the presence of a large spin-orbit interaction. This Hamiltonian is essentially the same as the Dirac Hamiltonian, but with spatial anisotropy and an effective velocity much smaller than the light velocity. This paper reviews recent progress in the theoretical understanding of transport and optical properties, such as the weak-field Hall effect together with the spin Hall effect, and ac conductivity, of a system described by the Wolff Hamiltonian and its isotropic version with a special interest of exploring possible relationship with orbital magnetism. It is shown that there exist a fundamental relationship between spin Hall conductivity and orbital susceptibility in the insulating state on one hand, and the possibility of fully spinpolarized electric current in magneto-optics. Experimental tests of these interesting features have been proposed.

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“…The effective g-factor is determined from the effective Zeeman splitting E * Z through g * µ B H = E * Z , 76) so that we obtain the effective g-factor…”

Section: Wolff Hamiltonian Under a Magnetic Fieldmentioning

confidence: 99%

Transport Properties and Diamagnetism of Dirac Electrons in Bismuth

2015

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“…Instead the spatial extension of the wave function across many unit cells leads to the large g factors through interatomic circulating currents originating from the spin-orbit potential. 2 As a wave packet in a semiconductor crystal can have a substantial extent due to the small effective mass m * , the envelope wave function can sustain large extended circulating currents leading to a large envelope orbital angular momentum. In the absence of spin-orbit coupling these currents vanish and do not contribute to the modification of the g factor at all.…”

Section: Introductionmentioning

confidence: 99%

gfactors and diamagnetic coefficients of electrons, holes, and excitons in InAs/InP quantum dots

et al. 2012

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The electron, hole, and exciton g factors and diamagnetic coefficients have been calculated using envelopefunction theory for cylindrical InAs/InP quantum dots in the presence of a magnetic field parallel to the dot symmetry axis. A clear connection is established between the electron g factor and the amplitude of those valence-state envelope functions that possess nonzero orbital momentum associated with the envelope function. The dependence of the exciton diamagnetic coefficients on the quantum dot height is found to correlate with the energy dependence of the effective mass. Calculated exciton g factor and diamagnetic coefficients, constructed from the values associated with the electron and hole constituents of the exciton, match experimental data well, however including the Coulomb interaction between the electron and hole states improves the agreement. Remote-band contributions to the valence-band electronic structure, included perturbatively, reduce the agreement between theory and experiment.

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“…In this way, we have observed spin lifetimes of approximately 1 ms at 60 K in 350 mm thick transport devices [94]. 1 The temperature dependence of spin lifetime is compared with the T −5/2 power law predicted by Yafet [91] and the more recent (and more complete) theory of Cheng et al [92] giving T −3 in figure 6b. However, the fully 1 In the study of Huang et al [80], a more conservative estimate of the spin lifetime (e.g.…”

Section: Ballistic Hot Electron Injection and Detection Devicesmentioning

confidence: 87%

Introduction to spin-polarized ballistic hot electron injection and detection in silicon

Appelbaum

2011

Phil. Trans. R. Soc. A.

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Ballistic hot electron transport overcomes the well-known problems of conductivity and spin lifetime mismatch that plague spin injection attempts in semiconductors using ferromagnetic ohmic contacts. Through the spin dependence of the mean free path in ferromagnetic thin films, it also provides a means for spin detection after transport. Experimental results using these techniques (consisting of spin precession and spin-valve measurements) with silicon-based devices reveals the exceptionally long spin lifetime and high spin coherence induced by drift-dominated transport in the semiconductor. An appropriate quantitative model that accurately simulates the device characteristics for both undoped and doped spin transport channels is described; it can be used to recover the transit-time distribution from precession measurements and determine the spin current velocity, diffusion constant and spin lifetime, constituting a spin 'HaynesShockley' experiment without time-of-flight techniques. A perspective on the future of these methods is offered as a summary.

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g Factors and Spin-Lattice Relaxation of Conduction Electrons

Cited by 673 publications

References 105 publications

Transport Properties and Diamagnetism of Dirac Electrons in Bismuth

Transport Properties and Diamagnetism of Dirac Electrons in Bismuth

gfactors and diamagnetic coefficients of electrons, holes, and excitons in InAs/InP quantum dots

Introduction to spin-polarized ballistic hot electron injection and detection in silicon

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