G-Centre Formation and Behavior in a Silicon on Insulator Platform by Carbon Ion Implantation and Proton Irradiation

Abstract

The interest in the G-centre is driven by reports that it can lase in silicon. To further this, the transfer of this technology from bulk silicon to a silicon-on-insulator (SOI) platform is an essential requirement to progress to lasing and optical amplification on silicon. We report on the efficient generation of the lasing G-centre in SOI substrates by proton irradiation of carbon ion implants. Following carbon implantation samples were annealed and then proton irradiated to form the G-centre and characterized by photoluminescence measurements. The temperature dependence of the emission and the behaviour of the G-centre with post proton annealing were investigated and results are compared with identical implants in control samples of bulk silicon. Overall, we find that the optically active G-centre can be up to 300% brighter and has better survivability over a wider process window in SOI than in bulk silicon.

Optimization of photonic crystal structure by FDTD method to improve the light extraction efficiency in silicon

“…The min value is deducted from the maximum value and the previous result is divided by the latter. Mathematically, the normalized equation is represented as (5);…”

“…[3] Various approaches have been attempted to try circumventing the bandgap limitation and transforming silicon as an optically active material. Among the successful and promising methods of emitting light from silicon are point defect centres, [4] , [5] incorporation of quantum confined structures [6] , [7] and introduction of rare earth element such as Erbium. Although impressive, these approaches have some shortcomings that hinder their use in telecommunications.…”