2013
DOI: 10.1016/j.nima.2013.05.048
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Future trends of 3D silicon sensors

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Cited by 7 publications
(6 citation statements)
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“…The so called "3D" concept has been developed and experimented in silicon detectors [1,2], for which this solution allows also the employment of correspondingly lower depleting voltages, due to the decreased distance between the polarizing electrodes.…”
Section: Introductionmentioning
confidence: 99%
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“…The so called "3D" concept has been developed and experimented in silicon detectors [1,2], for which this solution allows also the employment of correspondingly lower depleting voltages, due to the decreased distance between the polarizing electrodes.…”
Section: Introductionmentioning
confidence: 99%
“…
3D detectors, whose electrodes extend perpendicularly to the sensor surface, represent one of the solution proposed for the challenges of radiation-harsh environments in high energy physics [1][2][3][4]. We report on the fabrication and characterization of prototypes of 3D diamond detector, which add to the 3D architecture the advantages of diamond as a sensor for tracking purposes.
…”
mentioning
confidence: 99%
“…To achieve saturated drift in a thicker sensor will also require a large bias voltage above 10 kV, potentially causing other problems for steady operation. Columnar or 3D deeply entrenched electrode configuration [28], replacing the existing planar electrode configuration, has recently shown promising results [29,30]. It may also be possible that distributed charge collection may be able to separate photoelectrically absorbed and Compton scattered X-rays.…”
Section: Spc Mode: Physics and Performance Considerationsmentioning
confidence: 99%
“…For Ge, about 17 sensor layers with a thickness around 60 µm each. An alternative to the multilayer 3D detector architecture could be a single thick layer with deeply buried electrodes as mentioned above [28][29][30]. The distances in-between the closest positive and negative electrodes would be less than 200 µm in GaAs, and less than 60 µm in Ge.…”
Section: The Weak Spc Modementioning
confidence: 99%
“…Standard planar devices realized with n-in-p technology show a manageable loss in charge collection efficiency ("only" a factor 5 at the highest fluences) and provide a viable solution, also because of the higher collection speed of electrons compared to holes [11]. Alternative, very attractive, solutions are explored by abandoning the planar paradigm with 3D silicon sensors, where through-silicon doped columns provide lateral collection electrodes that improve both speed and efficiency in charge collection, resulting in an increased radiation tolerance [12].…”
Section: Pos(eps-hep 2013)147mentioning
confidence: 99%