Future perspective and scaling down roadmap for RF CMOS

Morifuji, E.; Momose, H.S.; Ohguro, T.; Yoshitomi, T.; Kimijima, H.; Matsuoka, F.; Kinugawa, M.; Katsumata, Y.

doi:10.1109/vlsic.1999.797271

Cited by 34 publications

(22 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…IMD of a MOSFET is primarily resulted from the nonlinearity of transconductance and output conductance in the saturation region [1][2][3]. When gate length [4] is shortened in order to obtain better power gain and cutoff frequency, linearity performance of MOSFETs will decrease [5]. In addition, linearity performance of a MOSFET can also be dependent on the device gate width [5].…”

Section: Introductionmentioning

confidence: 99%

“…When gate length [4] is shortened in order to obtain better power gain and cutoff frequency, linearity performance of MOSFETs will decrease [5]. In addition, linearity performance of a MOSFET can also be dependent on the device gate width [5]. Therefore, the device geometry is an important parameter for the RF characteristic analysis of the MOSFETs [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

“…In addition, linearity performance of a MOSFET can also be dependent on the device gate width [5]. Therefore, the device geometry is an important parameter for the RF characteristic analysis of the MOSFETs [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Investigation of geometry dependence on MOSFET linearity in the impact ionization region using Volterra series

Lee

Lin

2015

Microelectronics Reliability

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Investigation of geometry dependence on MOSFET linearity in the impact ionization region using Volterra series

Lee

Lin

2015

Microelectronics Reliability

View full text Add to dashboard Cite

“…The continuous advancement of CMOS technology has attracted tremendous interest in the field of wireless communication via the integration of high performance digital circuits and RF CMOS components on a single chip [1]- [4]. Attributed to the aggressive CMOS device scaling, the gate delay has been pushed below 14ps at 130nm logic technology node and will be approaching 10ps at 90nm node.…”

Section: Introductionmentioning

confidence: 99%

“…The focus comes from the need to deliver a reasonable amount of RF power for wireless communication. The RF noise and associated gain are critically important for front-end low noise amplifier (LNA), which sets the ultimate minimum noise floor for the whole communication system It turns out a difficult practice to get optimized RF power and noise performance than fT and gate delay due to strong and complicated interaction with the unavoided parasitic effects [2]- [4]. In this work, we have examined the mentioned important RF device characteristics OfG(nmax, fmax, NFmin, PIdB, and PAE and will demonstrate the excellent performance of 23/19dB GQax at 2.4/5.8Ghz, 80 GHz fmax, 2.2 dB noise at 10 GHz, lOdBm PIdB, and 55% PAE at 2.4 GHz under IV bias, all realized simultaneously by the 80nm n-MOSFETs at 0.13tm node.…”

Section: Introductionmentioning

confidence: 99%

0.13 ?m Low Voltage Logic Based RF CMOS Technology with 115GHz fT and 80GHz fMAX

Guo¹,

Huang²,

Chan³

et al. 2003

33rd European Microwave Conference, 2003

View full text Add to dashboard Cite

Superior RF CMOS of 115GHz fT and 80GHz fmax has been realized by 0.13,m low voltage logic based RF CMOS technology by aggressive device scaling and optimized layout. NFf,B of 2.2dB at 10GHz is achieved even without deep N-well and ground-shielded signal pad. P1dB of near lOdBm can fit bluetooth requirement and 55% PAE at 2.4 GHz address the good potential of sub-lOOnm CMOS for low voltage RF power applications

show abstract

A fully electronically controllable Schmitt trigger and duty cycle‐modulated waveform generator

Kumar

Chaturvedi

Maheshwari

2017

Circuit Theory & Apps

View full text Add to dashboard Cite

The paper introduces a new Schmitt trigger consisting of only one multiple-output current inverting differential input transconductance amplifier with no passive element. The proposed circuit is simple and usable up to 100 MHz with the advantage of electronically controlled threshold levels and amplitude of the output. The circuit is also little sensitive to temperature and benefits from low power dissipation (0.5 mW). The amplitude of the output current is tunable electronically from 5 nA to 500 μA, which is a wide tunable range. The effects of transistors mismatch on proposed Schmitt trigger have also been explored. The utility of the proposed circuit is further justified through its application as a triangular/square wave generator, with a maximum frequency of 75 MHz. Duty cycle modulation through electronic means is also shown for the generator circuit, where duty cycle results for 80, 20, and 95% have been included, by varying external control current. The cadence VIRTUOSO simulation results by using generic process design kit 90-nm technology are shown to confirm the proposed theory. The proposed circuits are also verified through experimental results by using commercial integrated circuits: AD844 and LM13700. All the simulated and experimental results promise potential applications of the proposed circuits in instrumentation and communication systems. Figure 9. Monte Carlo sampling results showing the transient responses of V in , V z , and I out at 5 MHz for 150 runs when instance of mismatch is defined for (a) transistors M 5 and M 6 , (b) transistors M 20 and M 21 , and (c) transistors M 5 , M 6 , M 20 , and M 21 . [Colour figure can be viewed at wileyonlinelibrary.com] 2168 A. KUMAR, B. CHATURVEDI AND S. MAHESHWARI Figure 23. Experimentally observed square and triangular waveforms for (a) 80% duty cycle (b) 20% duty cycle (c) 95% duty cycle. [Colour figure can be viewed at wileyonlinelibrary.com] 2178A. KUMAR, B. CHATURVEDI AND S. MAHESHWARI Dostal T. Simply adjustable triangular and square wave generator employing controlled gain current and differential voltage amplifier. In 23th Conference Radioelektronika 2013; 109-114. 33. Chien HC. A current-/voltage-controlled four-slope operation square-/triangular-wave generator and a dual-mode pulse width modulation signal generator employing current-feedback operational amplifiers. Microelectronics Journal 2014; 45(6):634-647. 34. Chaturvedi B, Maheshwari S. Third-order quadrature oscillator circuit with current and voltage outputs.

show abstract

Future perspective and scaling down roadmap for RF CMOS

Cited by 34 publications

References 0 publications

Investigation of geometry dependence on MOSFET linearity in the impact ionization region using Volterra series

Investigation of geometry dependence on MOSFET linearity in the impact ionization region using Volterra series

0.13 ?m Low Voltage Logic Based RF CMOS Technology with 115GHz fT and 80GHz fMAX

A fully electronically controllable Schmitt trigger and duty cycle‐modulated waveform generator

Contact Info

Product

Resources

About