Future Direction for a Diffusion Barrier in Future High-Density Volatile and Nonvolatile Memory Devices

Yoon, Dong Soo; Roh, Jae–Sung; Baik, Hong Koo; Lee, Sung Man

doi:10.1080/10408430208500495

Cited by 26 publications

(10 citation statements)

References 110 publications

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“…The increase in the coloration efficiency by adding of TiO 2 nano-rods suggested that TiO 2 may involve in the redox process of the polymer. The conduction band edge (À4.3 eV) 43 of TiO 2 lies between the HOMO (À5.03 eV) and LUMO (À3.26 eV) levels of PDOCPDT. 27 It was known that when the redox potential of the electroactive chromophore lies above the conduction band edge of the TiO 2 .…”

Section: The Function Of the Tio 2 Nano-rods In The Tio 2 /Pdocpdt Namentioning

confidence: 99%

Enhancing the electrochromic characteristics of conjugated polymer with TiO₂ nano‐rods

Jhong

2008

J Polym Sci B Polym Phys

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Organic soluble, oleic acid capped TiO2 nano‐rod was well‐mixed with the electrochromic polymer: Poly‐(4,4‐dioctylcyclopenta[2,1‐b:3,4‐b′]‐dithiophene (PDOCPDT) to form TiO2/PDOCPDT nanocompsoite. TiO2/PDOCPDT film showed high electrochemical stability and its coloration efficiency is 1.5 times of that for pure PDOCPDT. The function of TiO2 nano‐rods can be regarded as a dispersion agent. PDOCPDT chains in TiO2/PDOCPDT may have a less aggregated structure and more open morphology, therefore has higher coloration efficiency. TiO2 may also act as electron transport or temporary electron storage centers, electrons can be transferred reversibly between PDOCPDT and TiO2 nano‐rods. TiO2/PDOCPDT is well‐soluble in CHCl3, large area thin films can be fabricated reproducibly simply by spin coating. © 2008 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 46: 1121–1130, 2008

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Section: The Function Of the Tio 2 Nano-rods In The Tio 2 /Pdocpdt Namentioning

confidence: 99%

Enhancing the electrochromic characteristics of conjugated polymer with TiO₂ nano‐rods

Jhong

2008

J Polym Sci B Polym Phys

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“…[1] Its nonvolatile oxide, RuO 2 , is conductive, which is particularly attractive for preparations and applications in oxygen-containing environments. In addition, Ru appears to be a promising Cu diffusion barrier material for future very large-scale integrated circuits for which Cu is used as interconnects.…”

Section: Introductionmentioning

confidence: 99%

UHV Surface Chemistry of bis(ethylcyclopentadienyl)ruthenium, (C₂H₅C₅H₄)₂Ru on an Oxide Substrate

Luo¹,

Wang²,

White³

2004

Chemical Vapor Deposition

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The interactions of an organometallic precursor to Ru thin films, bis(ethylcyclopentadienyl)ruthenium, (C 2 H 5 C 5 H 4 ) 2 Ru, with an amorphous Al 2 O 3 substrate were probed using tools of ultra-high vacuum surface science. The precursor adsorbs and desorbs with no decomposition on Al 2 O 3 that is bare, or covered with patches of O-saturated Ru. In the absence of pre-existing Ru sites, there was no reaction up to 950 K with or without co-dosed O 2 at pressures up to 10 ±6 torr. Film-forming reactions do occur under UHV dosing conditions when Ru sites and chemisorbed oxygen are both present. The distribution of chemical states of surface oxygen changes with temperature and influences reaction kinetics and film growth.

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“…Fabrication of the new generation storage nodes with three-dimensional structures requires conformal films, [4,5] thus making CVD and ALD [6,7] the most promising techniques for ruthenium deposition for the memory applications. Recently, ruthenium has also been studied as a barrier and seed layer for copper electrodeposition, and ALD is proposed to be the most suitable method for deposition of the ruthenium barriers into the high aspect ratio interconnects.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Ruthenium Thin Films from Ru(thd)₃ and Oxygen

Aaltonen¹,

Ritala

Arstila

et al. 2004

Chemical Vapor Deposition

149

156

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Ruthenium thin films were grown by atomic layer deposition (ALD) from tris(2,2,6,6-tetramethyl-3,5-heptanedionato)-ruthenium [Ru(thd) 3 ] and oxygen, at temperatures between 325 C and 450 C. All the films were polycrystalline metallic ruthenium as analyzed by X-ray diffraction (XRD). Impurity contents of the films (< 2.9 at.-% H, < 1.9 at.-% C, and < 5.5 at.-% O) were nearly independent of the Ru(thd) 3 pulse time as analyzed by time of flight elastic recoil detection analysis (TOF-ERDA). The films had resistivities below 20 lX cm and they adhered well to a thin Al 2 O 3 film on glass. Growth rates of 0.36 per cycle were obtained at a deposition temperature of 350 C. The gaseous reaction by-products were analyzed in situ by quadrupole mass spectrometry (QMS).

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Future Direction for a Diffusion Barrier in Future High-Density Volatile and Nonvolatile Memory Devices

Cited by 26 publications

References 110 publications

Enhancing the electrochromic characteristics of conjugated polymer with TiO₂ nano‐rods

Enhancing the electrochromic characteristics of conjugated polymer with TiO₂ nano‐rods

UHV Surface Chemistry of bis(ethylcyclopentadienyl)ruthenium, (C₂H₅C₅H₄)₂Ru on an Oxide Substrate

Atomic Layer Deposition of Ruthenium Thin Films from Ru(thd)₃ and Oxygen

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Future Direction for a Diffusion Barrier in Future High-Density Volatile and Nonvolatile Memory Devices

Cited by 26 publications

References 110 publications

Enhancing the electrochromic characteristics of conjugated polymer with TiO2 nano‐rods

Enhancing the electrochromic characteristics of conjugated polymer with TiO2 nano‐rods

UHV Surface Chemistry of bis(ethylcyclopentadienyl)ruthenium, (C2H5C5H4)2Ru on an Oxide Substrate

Atomic Layer Deposition of Ruthenium Thin Films from Ru(thd)3 and Oxygen

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Product

Resources

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Enhancing the electrochromic characteristics of conjugated polymer with TiO₂ nano‐rods

Enhancing the electrochromic characteristics of conjugated polymer with TiO₂ nano‐rods

UHV Surface Chemistry of bis(ethylcyclopentadienyl)ruthenium, (C₂H₅C₅H₄)₂Ru on an Oxide Substrate

Atomic Layer Deposition of Ruthenium Thin Films from Ru(thd)₃ and Oxygen