Fused vertical couplers

Liu, Bin; Shakouri, Ali; Abraham, P.; Kim, Boo-Gyoun; Jackson, Andrew W.; Bowers, John E.

doi:10.1063/1.121440

Cited by 30 publications

(16 citation statements)

References 8 publications

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“…These dislocations were formed in the GaAs, since they are parallel to either the [110] GaAs or the [1][2][3][4][5][6][7][8][9][10] GaAs direction.…”

mentioning

confidence: 99%

Microstructure of GaAs/GaN interfaces produced by direct wafer fusion

Jasiński¹,

Liliental‐Weber²,

Estrada³

et al. 2002

Applied Physics Letters

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“…These dislocations were formed in the GaAs, since they are parallel to either the [110] GaAs or the [1][2][3][4][5][6][7][8][9][10] GaAs direction.…”

mentioning

confidence: 99%

Microstructure of GaAs/GaN interfaces produced by direct wafer fusion

Jasiński¹,

Liliental‐Weber²,

Estrada³

et al. 2002

Applied Physics Letters

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“…Without these channels, we could see microscopic voids at the fused junction and many of the fabricated waveguides did not show clear eigenmodes. The Fabry-Perot resonance technique was used to measure the optical propagation loss [8][9][10][11]. The optical loss of the unfused waveguide is about 2.4 dB/cm, while the fused structure showed a loss of 3.5 dB/cm at 1.55 µm.…”

Section: Optical Loss At Fused Interfacementioning

confidence: 99%

3D Photonic Integrated Circuits for WDM Applications

Shakouri¹,

Liu²,

Abraham³

et al. 1998

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The wafer fusion technique for realization of compact waveguide switches, filters and 3D photonic integrated circuits is investigated theoretically and experimentally. Calculations based on the beam propagation method show that very short vertical directional couplers with 40-220 µm coupling lengths and high extinction ratios from 20 to 32 dB can be realized. These extinction ratios can be further improved using a slight asymmetry in waveguide structure. The optical loss at the fused interface was investigated by comparison of the transmission loss in InGaAsP-based ridge-loaded waveguide structures with and without a fused layer near the core region. This reveals an excess loss of 1.1 dB/cm at 1.55 µm wavelength due to the fused interface. Fused straight vertical directional couplers have been fabricated and characterized. Waveguides separated by 0.6 µm gap layer exhibit a coupling length of 62 µm and a switching voltage of about 12 volts. Since GaAs and InP have different material dispersion at 1.55 µm wavelength, a combination of InP and GaAs couplers is used to demonstrate an inherent polarization independent and narrowband filter.

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“…The schematic structure of the devices is shown in Fig. 1, which uses the technology reported in [10] and [11]. Two wafers were grown using metal- The n and p samples are then fused together at a temperature of 630 C in a hydrogen atmosphere for 50 min.…”

Section: Push-pull Fused Vertical Coupler Switchmentioning

confidence: 99%

Push-pull fused vertical coupler switch

Liu

Shakouri

Abraham

et al. 1999

IEEE Photon. Technol. Lett.

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Abstract-A single-electrode push-pull fused vertical coupler (FVC) switch using macroscopic crystal inversion symmetry is demonstrated. The anisotropic linear electrooptic effect in a zincblende crystal is used to achieve optical switching under 12-V reverse bias for a 6.9-mm-long FVC whose two guiding layers have different crystal symmetries. No switching is observed for the identical structure in which the two guiding layers have the same crystal symmetry.Index Terms-Electrooptic effects, optical directional couplers, optical switches, water bonding.are very attractive candidates to make optical waveguide switches and narrowband filters because of their very short coupling length and the feasibility of integration with other optoelectronic devices. Generally, switching is achieved by introducing a phase mismatch between two waveguides through the electrooptic effect. In a push-pull operation, the introduction of positive and negative phase shifts in the two waveguides of the coupler reduces the driving voltage and chirping for switching. It is well known that the linear electrooptic effect is anisotropic [4], [5] in zinc-blende crystal structures. When the applied electric field is perpendicular to the (001) surface, it gives a positive index change for the TE-polarized light propagating along [110] direction and a negative index change for the light propagating along the [110] direction. In conventional epitaxial vertical couplers, the upper and lower waveguides have the same crystal orientation [see Fig. 1(b)]. Consequently push-pull operation requires the signs of the electric fields in the upper and lower waveguides to be opposite. This requires presence of a third electrode between waveguides and application of positive and negative biases to the upper and lower waveguides. The fabrication is difficult in conventional vertical couplers. Since the electrooptic effect is anisotropic, if one of the waveguides in the vertical couplers is along the [110] orientation and the other one along the [110] orientation [see Fig. 1(a)], then under an applied bias, the index changes in two waveguides have different signs. This simplifies the electrode fabrication and only requires one electrode for push-pull operation. In this letter, a vertical coupler

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Fused vertical couplers

Abstract: Plasma silicon oxide-silica xerogel based planar optical waveguides A wavelength multiplexer using cascaded three-dimensional vertical couplers

Cited by 30 publications

References 8 publications

Microstructure of GaAs/GaN interfaces produced by direct wafer fusion

Microstructure of GaAs/GaN interfaces produced by direct wafer fusion

3D Photonic Integrated Circuits for WDM Applications

Push-pull fused vertical coupler switch

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