Further studies on the modified two-terminal geometry for CdZnTe detectors

Parnham, K.; Szeles, Csaba; Prettyman, T. H.; Smith, Maynard E.; Stahle, C. M.; Parker, Bradford H.; Wang, Ligin L.

doi:10.1016/s0168-9002(00)00878-0

Cited by 7 publications

(3 citation statements)

References 7 publications

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“…It is seen that the (µτ) e values are quite high with small deviation, but the (µτ) h values are higher near the wafer edge and lower at the wafer center. Lower (µτ) h values at the wafer center mean significant peak tailing, which decrease the peak-to-valley ratios [22]. We consider non-uniform (µτ) h values to be the reason for the non-uniform peak-to-valley ratios that are shown in Figure 6c.…”

Section: Radiation Responsementioning

confidence: 99%

Growth of Single-Crystal Cd0.9Zn0.1Te Ingots Using Pressure Controlled Bridgman Method

Yang

Wang

Wang³

et al. 2020

Crystals

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We report growth of single-crystal Cd0.9Zn0.1Te ingots while using the pressure-controlled Bridgman method. The Cd pressure was controlled during growth to suppress its evaporation from the melt and reduce the size of Te inclusions in the as-grown crystals. The accelerated crucible rotation technique (ACRT) was used to suppress constitutional supercooling. The fast accelerating and slow decelerating rotation speeds were optimized. Two-inch Cd0.9Zn0.1Te single-crystal ingots without grain boundaries or twins were grown reproducibly. Glow discharge mass spectrometry results indicate the effective segregation coefficients of Zn and In dopants are 1.24 and 0.18, respectively. The full width half maximum (FWHM) of X-ray rocking curve was approximately 22.5 ″, and the IR transmittance was approximately 61%, indicating high crystallinity. The mean size of the Te inclusions was approximately 13.4 μm. Single-crystal wafers were cut into 5 × 5 × 2 mm3 slices and then used to fabricate gamma ray detectors. The energy resolution and peak-to-valley ratio maps were constructed while using 59.5 keV gamma ray measurements, which proved the high uniformity of detection performance.

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Section: Radiation Responsementioning

confidence: 99%

Growth of Single-Crystal Cd0.9Zn0.1Te Ingots Using Pressure Controlled Bridgman Method

Yang

Wang

Wang³

et al. 2020

Crystals

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“…However, for the typical planar detector design, the CZT detector should possess high values of both (mt) e and (mt) h , and in certain cases, holes are probably responsible for good spectroscopic performance at high energy. 10 Thirdly, carrier recombination at the surface of the CZT detector can affect the lifetimes and energy resolution. In a previous paper, 11 we showed that the room-temperature surface-recombination velocities of CZT crystal grown using the high-pressure Bridgman method depend on electron generation rate and choice of the surface treatments.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Cd1−xZnxTe crystals grown from a modified vertical bridgman technique

Cui

Groza

Wright

et al. 2006

Journal of Elec Materi

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Cd 1ÿ x Zn x Te (CZT) crystals grown from a modified vertical Bridgman technique were characterized by means of an optical polarized transmission technique using the Pockels effect, low-temperature direct current (DC) photoconductivity technique, low-temperature photoluminescence (PL) spectroscopy, room-temperature PL mapping technique, and detector performance measurements. Electric field mapping indicates that an approximation of a uniform electric field distribution approximation is generally satisfied for CZT detectors operated at room temperature under typical working conditions. A nonuniform electric field distribution is observed under intense infrared (IR) light illumination, and a model is proposed based on charge generation of defects, trapping, and space-charge effects. The largest hole mobility-lifetime product (mt) h of the CZT detector measured by DC photoconductivity is 7.0 3 10 ÿ 4 cm 2 /V. The detector treated with 2% bromine in methanol chemical etch has a relatively small surface recombination velocity at room temperature, which was obtained from DC photocurrent and detector performance tests, as measured by irradiation of 5.5-MeV a particles and 59.6-keV g-rays, respectively. We have clearly shown the equivalence of charge collection efficiency results measured by both DC photocurrent and a particle response. Lowtemperature DC photocurrent measurements show that surface recombination velocity increases significantly with decreasing temperature from 300 K to 250 K. The effective electron mobility-lifetime product-combination effects of bulk and surface of CZT crystal-increases with increment of temperature. Room-temperature PL mapping measurements indicate uniformity of zinc concentration within CZT crystals. Low-temperature PL spectroscopy shows that the dominant emission peaks are excitons, which are bound to either shallow neutral donors (D 0 , X) or neutral acceptors (A 0 , X), depending on the temperature, concentration of donors and acceptors, and the incident light intensity. It was found that the luminescence of (D 0 , X) depends linearly on the incident laser intensity, while (A 0 , X) has a nonlinear dependence.

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“…Particular electrode geometries are especially important. They could function as electron‐only devices (Luke, 1995; Parnham et al , 2001; Zhong et al , 1996) and devices that exploit “small pixel effect” (Eskin et al , 1999). Size of the collecting electrode can be adjusted for optimal performance for a particular μτ (mobility‐lifetime) product (Amman and Luke, 1997).…”

Section: Introductionmentioning

confidence: 99%

Thin films of (TeO₂)_1−x(In₂O₃)_x as gamma radiation sensors

Arshak

Korostynska

2003

Sensor Review

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Thin films of tellurium dioxide (TeO2) and indium oxide (In2O3) mixtures were investigated for γ‐radiation dosimetry purpose. Samples were fabricated using thermal vacuum evaporation technique. The electrical properties of mixed oxides thin films [(TeO2)1−x(In2O3)x, where x=0 and 10 per cent by weight] and their changes under the influence of γ‐radiation were investigated. Samples with contacts having a planar structure showed increase in the values of current with the increase in radiation dose up to a certain dose level. Thin films in the form of pn‐junctions were fabricated with (TeO2)1−x(In2O3)x as p‐type material and sulphur as n‐type material. These pn‐junctions exhibited Zener diode behaviour. The current‐voltage characteristics for as‐deposited and γ‐irradiated samples were recorded. The level of response for all the fabricated devices was found to be highly dependent on the composition of the exposed material.

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Further studies on the modified two-terminal geometry for CdZnTe detectors

Cited by 7 publications

References 7 publications

Growth of Single-Crystal Cd0.9Zn0.1Te Ingots Using Pressure Controlled Bridgman Method

Growth of Single-Crystal Cd0.9Zn0.1Te Ingots Using Pressure Controlled Bridgman Method

Characterization of Cd1−xZnxTe crystals grown from a modified vertical bridgman technique

Thin films of (TeO₂)_1−x(In₂O₃)_x as gamma radiation sensors

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Further studies on the modified two-terminal geometry for CdZnTe detectors

Cited by 7 publications

References 7 publications

Growth of Single-Crystal Cd0.9Zn0.1Te Ingots Using Pressure Controlled Bridgman Method

Growth of Single-Crystal Cd0.9Zn0.1Te Ingots Using Pressure Controlled Bridgman Method

Characterization of Cd1−xZnxTe crystals grown from a modified vertical bridgman technique

Thin films of (TeO2)1−x(In2O3)x as gamma radiation sensors

Contact Info

Product

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About

Thin films of (TeO₂)_1−x(In₂O₃)_x as gamma radiation sensors