Further experimental investigations on some ferromagnetic oxidic compounds of manganese with perovskite structure

Volger, J.

doi:10.1016/s0031-8914(54)80015-2

Cited by 188 publications

(81 citation statements)

References 11 publications

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“…Strongly correlated electron systems have been attracting great attention from the condensedmatter physics community due to their many exotic electronic and magnetic properties, such as high critical temperature (high-T c ) superconductivity, colossal magnetoresistance (MR), and electronic nematic states [1][2][3]. Samarium hexaboride (SmB 6 ) is well known as a strongly correlated electron system, in which the 4f-electrons hybridize with the conduction 5d-electrons and form a narrow Kondo energy gap, E g ≈ 15 meV [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Crossover of Magnetoresistance from Fourfold to Twofold Symmetry in SmB₆ Single Crystal, a Topological Kondo Insulator

Yue

Wang

et al. 2015

J. Phys. Soc. Jpn.

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Topological Kondo insulators have been attracting great attention from the condensed-matter physics community due to their fascinating topological and strongly correlated properties. Here, we report angledependent c-axis magnetoresistance (MR) oscillations in a Kondo insulator, SmB 6 single crystal, in a magnetic field of up to 13 T rotated in the ab-plane. Four-fold symmetric MR oscillations are first observed above 8 K, which result from the four-fold (C 4 ) degeneracy of the bulk Fermi surface of SmB 6 . With decreasing temperature down to 2.3 K, the C 4 symmetry of the MR oscillations gradually weakens and C 2 symmetry appears. This demonstrates a crossover from three-dimensional bulk states to two-dimensional surface states and implies the possible emergence of topological nematic states. Our experimental observations shed new light on the metallic surface states and nematic states in the Kondo insulator SmB 6 .

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Section: Introductionmentioning

confidence: 99%

Crossover of Magnetoresistance from Fourfold to Twofold Symmetry in SmB₆ Single Crystal, a Topological Kondo Insulator

Yue

Wang

et al. 2015

J. Phys. Soc. Jpn.

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“…In a class of doped manganites [2] which exhibit the colossal magnetoresistance (CMR) effect [3]-the extremely large drop in resistivity induced by application of a magnetic field near the Curie temperature (T C ), the FM metallic state has been suggested theoretically [4] and experimentally [5] as a possible halfmetallic state.…”

Section: Introductionmentioning

confidence: 99%

Magnons in ferromagnetic metallic manganites

Zhang¹,

Ye²,

Sha³

et al. 2007

J. Phys.: Condens. Matter

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Ferromagnetic (FM) manganites, a group of likely half-metallic oxides, are of special interest not only because they are a testing ground for the classical double-exchange interaction mechanism for the 'colossal' magnetoresistance, but also because they exhibit an extraordinary arena of emergent phenomena. These emergent phenomena are related to the complexity associated with strong interplay between charge, spin, orbital, and lattice. In this review, we focus on the use of inelastic neutron scattering to study the spin dynamics, mainly the magnon excitations in this class of FM metallic materials. In particular, we discuss the unusual magnon softening and damping near the Brillouin zone boundary in relatively narrow-band compounds with strong Jahn-Teller lattice distortion and charge-orbital correlations. The anomalous behaviours of magnons in these compounds indicate the likelihood of cooperative excitations involving spin and lattice as well as orbital degrees of freedom.

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“…On the other hand, substituting part of the La 3+ ions in the LaMnO 3 host lattice by tetravalent cations such as Ce 4+ , Te 4+ , or Sb 4+ leads to a nominal electron-doping, connected with a mixed Mn 2+ /Mn 3+ valence, the latter being supposed to be equivalent to the mixed 3+/4+ case with respect to the double-exchange mechanism [12]. Here, the cerium-doped LaMnO 3 , typically in the form of epitaxial La 0.7 Ce 0.3 MnO 3 (LCeMO) thin films [13], plays the role of a model compound for studying electrondoped lanthanum manganites. However, as shown by a growing body of experimental data, as-prepared LCeMO films tend to oxygen excess and thus an effective hole-doping (see e.g.…”

Section: Introductionmentioning

confidence: 99%

“…In the early years, fundamental issues such as the explanation of the relation between electrical transport and magnetic order in bulk crystals were in the focus [3,4,5]. Later, especially with the decisive progress in thin film preparation [6], a number of further intriguing issues were under debate, e.g., questions related to the functionalization of heterostructures and interfaces, electronic phase separation [7], or the response to light excitation [8].…”

Section: Introductionmentioning

confidence: 99%

Quantifying the electrical transport characteristics of electron-doped La0.7Ce0.3MnO3 thin films through hopping energies, Mn valence, and carrier localization length

Thiessen

Beyreuther

Werner³

et al. 2015

Journal of Physics and Chemistry of Solids

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Abstract. Presently, cerium-doped LaMnO 3 is vividly discussed as an electron-doped counterpart prototype to the wellestablished hole-doped mixed-valence manganites. Here, La 0.7 Ce 0.3 MnO 3 thin films of different thicknesses, degrees of CeO 2 phase segregation, and oxygen deficiency, grown on SrTiO 3 single crystal substrates, are compared with respect to their resistancevs.-temperature (R vs. T) behavior from 300 K down to 90 K. While the variation of the film thickness (and thus the degree of epitaxial strain) in the range between 10 nm and 100 nm has only a weak impact on the electrical transport, the degree of oxygen deficiency as well as the existence of CeO 2 clusters can completely change the type of hopping mechanism. This is shown by fitting the respective R-T curves with three different transport models (adiabatic polaron hopping, Mott variable-range hopping, Efros-Shklovskii variable-range hopping), which are commonly used for the mixed-valence manganites. Several characteristic transport parameters, such as the hopping energies, the carrier localization lengths, as well as the Mn valences are derived from the fitting procedures.

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Further experimental investigations on some ferromagnetic oxidic compounds of manganese with perovskite structure

Cited by 188 publications

References 11 publications

Crossover of Magnetoresistance from Fourfold to Twofold Symmetry in SmB₆ Single Crystal, a Topological Kondo Insulator

Crossover of Magnetoresistance from Fourfold to Twofold Symmetry in SmB₆ Single Crystal, a Topological Kondo Insulator

Magnons in ferromagnetic metallic manganites

Quantifying the electrical transport characteristics of electron-doped La0.7Ce0.3MnO3 thin films through hopping energies, Mn valence, and carrier localization length

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Further experimental investigations on some ferromagnetic oxidic compounds of manganese with perovskite structure

Cited by 188 publications

References 11 publications

Crossover of Magnetoresistance from Fourfold to Twofold Symmetry in SmB6 Single Crystal, a Topological Kondo Insulator

Crossover of Magnetoresistance from Fourfold to Twofold Symmetry in SmB6 Single Crystal, a Topological Kondo Insulator

Magnons in ferromagnetic metallic manganites

Quantifying the electrical transport characteristics of electron-doped La0.7Ce0.3MnO3 thin films through hopping energies, Mn valence, and carrier localization length

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Crossover of Magnetoresistance from Fourfold to Twofold Symmetry in SmB₆ Single Crystal, a Topological Kondo Insulator

Crossover of Magnetoresistance from Fourfold to Twofold Symmetry in SmB₆ Single Crystal, a Topological Kondo Insulator