1983
DOI: 10.1103/physrevb.27.2285
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Further characterization of theE1center in crystalline SiO2

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Cited by 237 publications
(121 citation statements)
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“…The in tensity of E' centers increased between 170°C and 280°C, then decreased above 300°C and was annealed out at 440°C. This temperature behavior of E' centers is consistent with previous studies (Jani et al, 1983;Miki and Ikeya, 1981).…”
Section: Resultssupporting
confidence: 81%
“…The in tensity of E' centers increased between 170°C and 280°C, then decreased above 300°C and was annealed out at 440°C. This temperature behavior of E' centers is consistent with previous studies (Jani et al, 1983;Miki and Ikeya, 1981).…”
Section: Resultssupporting
confidence: 81%
“…2) shows an increase of thé signal intensity from 100 to 250°C and a rapid decrcase after 250°C. This curvc confirms thé results obtained by Jani et al (1983) and reccntly by Toyoda and Ikeya (1991a) for thé samc center. The latter authors showed.…”
Section: Annealing Studiessupporting
confidence: 80%
“…The experimental value of A iso for an ordinary EЈ center is 412 G, 33 but theoretical studies using a pseudopotential method similar to the one employed here predicted a value of 468 G, 6 close to the results found in the present work for Si 1 000 in the T II and T III states. Therefore it seems likely that the Si 1 000 A iso parameter is similar to the ordinary EЈ center value in states T II , T III but has a smaller value in the T IV structure.…”
Section: B Epr Parameterssupporting
confidence: 76%