Furnace and laser methods of bonding metals to ceramics: phenomenological investigation

Curicuta, V; Poulain, D.; Alexander, Dennis R.; Angelis, R.J. De; Gasser, S. M.; Kolawa, E.

doi:10.1016/s0921-5107(99)00587-5

Cited by 6 publications

(5 citation statements)

References 15 publications

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“…The resulting joints normally reach mechanical strengths between 50 and 200 MPa at temperatures in excess of 1000 °C (depending on the base materials). On the downside, grain growth and residual stress development may also occur [17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

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Review Article: recent advances in metal-ceramic brazing

2003

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Metal-ceramic joining has slowly but steadily become an important manufacturing step. The evolution of joining processes has allowed ceramics to be used in combination with metals in a number of hybrid devices from traditional light bulbs and seals to improved cutting tools and modern monitoring and measuring electronic devices. New joining methods and newer approaches to conventional methods have been developed aiming at joints characterized by improved reliability, and interfaces capable of withstanding high-temperature resistance with minimum residual stresses. A summary of recent improvements on alternative approaches to ceramic-metal joining as well as new developments on brazing are presented herein. The present review also focuses on recent advances towards brazing metallized ceramics and the selection of filler alloys, since in a scenario that includes joining by laser and direct bonding with liquid transient phases, brazing continues to be by far the most widely used approach to joining as a result of its low-cost and possibility to join intricate geometries for large-scale production. Finally, methods to evaluate the mechanical strength and residual thermal stresses are presented in addition to alternative approaches to minimize residual stresses and, consequently, improve joint reliability.

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Section: Introductionmentioning

confidence: 99%

“…Novel ceramic/metal joining techniques are in constant development. Diffusion bonding with the formation of transient liquid phases and direct joining of metals to ceramics using laser are some of the most recent advances [18,26] Table I -Organic adhesives used in ceramic/metal joining [16].…”

Section: Introductionmentioning

confidence: 99%

Review Article: recent advances in metal-ceramic brazing

2003

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“…One proposed process to improve weak adhesion force between Cu film and ceramics substrate is the use of copper-oxide eutectic bonding as applied for manufacture of copper-bonded alumina. [24][25][26][27][28][29][30] It is commonly carried out as follows: oxidized and/or pure copper deposited on Al 2 O 3 is heated just above the copper-oxygen eutectic temperature in slightly oxidizing or inert atmospheres. This process can induce the reliable bonding through physical and chemical interactions of Cu film with alumina substrate, explained by following reasons; ͑1͒ eutectic copper-oxide can form a liquid skin around the copper film.…”

Section: Resultsmentioning

confidence: 99%

“…In addition, copper aluminate such as CuAlO 2 and CuAl 2 O 4 , which is formed at the interface by reaction of eutectic copper-oxide with alumina, could be lead to reliable bonding through chemical interaction. 27,30 In the present work, we consider that wettability of CuO particles on an AlN substrate is not so important, because the temperature is far below the melting point of CuO. Therefore, reliable bonding can be mainly achieved by chemical interaction in the intermediate layer at the interface between Cu particles and substrate.…”

Section: Resultsmentioning

confidence: 99%

Fabrication of Copper Film on Aluminum Nitride by Novel Electroless Plating

Yanagimoto

Akamatsu

Deki

et al. 2003

J. Electrochem. Soc.

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A detailed study aimed at investigating the interfacial structure of Cu films deposited on high purity aluminum nitride ͑AlN͒ substrate, which controls the adhesive strength of the deposited Cu film, is described. In this system, the Cu films are deposited by uniform coating of nanosized Cu 2 O particles onto the substrate, oxidation of Cu 2 O to CuO by heat-treatment in air, and subsequent reduction to metallic Cu followed by electroless Cu plating. Effect of the treatment condition on the structure of composite layer formed on the AlN substrate was investigated by means of X-ray diffraction, scanning electron microscopy, and transmission electron microscopy, which show that the interfacial structure depends significantly on the annealing conditions. Upon heattreatment above 800°C in air, an CuAl 2 O 4 and/or ␣-Al 2 O 3 phase is formed on the AlN surface. The adhesive strength of the deposited Cu film increased with increasing the annealing temperature, and maximum strength observed is ca. 4 kg per 2ϫ2 mm 2 ͑kg/4 mm 2 ͒, much greater than that obtained by conventional electroless plating process. The formation of an interfacial oxide layer is suggested to be responsible for high adhesive strength through chemical interaction. The use of Cu 2 O particles as deposition seeds having chemical bonding with AlN substrate can be crucial in this methodology, which has important implications for practical manufacture of Cu-based electronic devices fabricated on AlN substrate.Nanosized metal ͑oxide͒ particles have been of considerable interest because they can exhibit much higher catalytic reactivity than those of bulk materials. 1-4 The characteristics of the particles can be attributed to the increased ratio of surface to bulk atoms, providing enhancement of surface properties. Recently, metallization of insulating and/or dielectric materials with reasonable structural features has become central to developments in microelectronics technology, the most of these are conventionally performed by electroless plating, which utilizes Pd particles as catalyst for initiation of metal deposition because of its high catalytic activity. 5-12 Since the electroless plating method has advantages such as large-scale production, simplicity of process, and applicability to large and/or nonflat substrates in comparison with dry and screen printing processes, it is often carried out for manufacture of electronic devices, mainly fabrication of circuit line on insulating substrate. The use of nanosized particles is significantly crucial with respect to not only their catalytic activity but also uniform deposition of metal film, i.e., uniform dispersion of large amount of Pd particles adsorbed on insulator is possible. Pd particles are often deposited directly on insulators by means of sensitizing and subsequent activation processes. Metal films are then deposited on the treated insulator in electroless plating bath.The process of device fabrication requires high reliability in terms of adhesive strength of the metal films with substrate. It...

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“…Novel approaches as well as fine-tuned well established techniques have been reported, especially aiming at reducing costs for large batches and improving the reliability of joined components, thus fulfilling the requirements for a growing number of applications from industrial and electronic components to biomaterials [1][2][3][4][5]. Recent reports have undoubtedly pointed out to the strict relationship between market improvement of structural ceramics and the technological advances on metal-ceramic, ceramic-ceramic and metal-composite ceramic joining [6][7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%