Fundamentals of Silicon Carbide Technology

Promise and Challenges of High-Voltage SiC Bipolar Power Devices

“…The increase of the unipolar on-resistance at elevated temperature is ascribed to the decrease of electron mobility due to enhanced phonon scattering. The temperature dependence of the unipolar on-resistance shown in Figure 13a is consistent with the temperature dependence of electron mobility in lightly-doped n-type SiC [4]. consistent with a report on 4.5 kV SiC pin diodes formed by implantation [42].…”

“…The promise of SiC power devices stems from its superior physical properties and rapid progress in growth and device technologies [1][2][3][4][5]. SiC (4H polytype) unipolar devices such as metal-oxide-semiconductor field effect transistors (MOSFETs) and Schottky barrier diodes (SBDs) with blocking voltages of 600-1700 V have been commercialized, demonstrating substantial reduction of power loss in various power conversion systems.…”

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

“…4H-SiC 9.7 [90] 980 [90] 3.1 [213] 370 [90] In general, for UWBG materials to have impact on these applications, vertical device structures [90,214,215] similar to those utilized today for Si and SiC will need to be developed. While lateral UWBG devices such as HEMTs or MESFETs may be quite useful for high-frequency switching applications (and preliminary devices of this type have been realized in the AlGaN [157] and (AlGa) 2 O 3 [216] systems), lateral devices will likely be less useful for very high-voltage (defined somewhat arbitrarily as >5 kV) applications.…”

Comprehensive Study on Band-Gap Variations insp3-Bonded Semiconductors: Roles of Electronic States Floating in Internal Space

“…Valence bands consist of sp 3 -bonding orbitals and conduction bands sp 3 -antibonding. However, it is reported that the stacking sequence affects electronic properties considerably in silicon carbide (SiC) [2,3]. SiC is indeed a manifestation of the polytypes: Dozens of polytypes of SiC are observed.…”