2022
DOI: 10.1063/5.0097804
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Fundamentals and applications of mixed-dimensional heterostructures

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Cited by 5 publications
(3 citation statements)
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“…To harness light-matter interaction in 2D material transition metal dichalcogenides (TMDCs) 6 , 7 they’re combined with NPs via different approaches including drop-casting 8 , dip-coating 9 , 10 , atomic layer deposition 11 , 12 , self-assembled layer 13 , 14 , and spontaneous redox reaction 15 . Yielding with mixed-dimensional heterostructures 16 , hybrid materials 17 , and heterojunctions 18 that have been effectively employed for various applications ranging from hydrogen evolution reaction (HER) to light-emitting diodes and sensors 19 25 . For example, molybdenum disulfide (MoS 2 ) with deposited Au@Ag co-shell nanorattles attenuated overpotential and reduced Tafel slope for the HER due to plasmonic hot electron photocatalysis tuned by laser power and wavelength 26 .…”
Section: Introductionmentioning
confidence: 99%
“…To harness light-matter interaction in 2D material transition metal dichalcogenides (TMDCs) 6 , 7 they’re combined with NPs via different approaches including drop-casting 8 , dip-coating 9 , 10 , atomic layer deposition 11 , 12 , self-assembled layer 13 , 14 , and spontaneous redox reaction 15 . Yielding with mixed-dimensional heterostructures 16 , hybrid materials 17 , and heterojunctions 18 that have been effectively employed for various applications ranging from hydrogen evolution reaction (HER) to light-emitting diodes and sensors 19 25 . For example, molybdenum disulfide (MoS 2 ) with deposited Au@Ag co-shell nanorattles attenuated overpotential and reduced Tafel slope for the HER due to plasmonic hot electron photocatalysis tuned by laser power and wavelength 26 .…”
Section: Introductionmentioning
confidence: 99%
“…[3] For continued miniaturization, various innovations in materials and device designs, such as emerging nanomaterials, fin field-effect transistors, and gate-all-around field-effect transistors, are being actively researched. [4][5][6][7][8][9][10] Similar to the development trend in traditional electronics, downsizing individual nodes in artificial neural networks (ANNs), which are designed to mimic the cortical neural network of the human brain, is imperative for the progress of advanced artificial intelligence hardware. [11,12] This is because a densely packed neural network can substantially amplify the learning, recognition, and prediction capabilities of a system.…”
Section: Introductionmentioning
confidence: 99%
“…[ 3 ] For continued miniaturization, various innovations in materials and device designs, such as emerging nanomaterials, fin field‐effect transistors, and gate‐all‐around field‐effect transistors, are being actively researched. [ 4–10 ]…”
Section: Introductionmentioning
confidence: 99%