Fundamental understanding and modeling of reactive sputtering processes

Berg, Sören; Nyberg, Tomas

doi:10.1016/j.tsf.2004.10.051

Cited by 607 publications

(413 citation statements)

References 18 publications

Supporting

Mentioning

388

Contrasting

Order By: Relevance

“…Typical for these processes is that the formation of the compound material takes place on the surface of the target (referred to as target coverage or poisoning). 80,81 This layer is then sputtered and transported to the substrate to form the compound film. Deposition from a fully covered target (referred to as the compound sputtering mode) allows for growth of stoichiometric compound films, i.e., compound films with sufficient incorporation of the reactive gas atoms.…”

Section: F Reactive Hipimsmentioning

confidence: 99%

“…Deposition from a fully covered target (referred to as the compound sputtering mode) allows for growth of stoichiometric compound films, i.e., compound films with sufficient incorporation of the reactive gas atoms. 80,81 At these conditions, deposition rates lower than those obtained from an elemental (e.g., metallic) target are commonly achieved. 80,81 Growth of stoichiometric compound films with relatively high rates can be facilitated in the intermediate target coverage regime (referred to as transition zone) between the metallic and the compound mode.…”

Section: F Reactive Hipimsmentioning

confidence: 99%

“…80,81 At these conditions, deposition rates lower than those obtained from an elemental (e.g., metallic) target are commonly achieved. 80,81 Growth of stoichiometric compound films with relatively high rates can be facilitated in the intermediate target coverage regime (referred to as transition zone) between the metallic and the compound mode. 80,81 In reactive DCMS, the transition sputtering zone is frequently unstable, and a hysteresis in the process parameters (i.e., target voltage, deposition rate, and reactive gas partial pressure) is often observed.…”

Section: F Reactive Hipimsmentioning

confidence: 99%

“…80,81 Growth of stoichiometric compound films with relatively high rates can be facilitated in the intermediate target coverage regime (referred to as transition zone) between the metallic and the compound mode. 80,81 In reactive DCMS, the transition sputtering zone is frequently unstable, and a hysteresis in the process parameters (i.e., target voltage, deposition rate, and reactive gas partial pressure) is often observed. 80,81 This is particularly pronounced during reactive DCMS of metal oxides.…”

Section: F Reactive Hipimsmentioning

confidence: 99%

“…80,81 In reactive DCMS, the transition sputtering zone is frequently unstable, and a hysteresis in the process parameters (i.e., target voltage, deposition rate, and reactive gas partial pressure) is often observed. 80,81 This is particularly pronounced during reactive DCMS of metal oxides. 82 As a consequence, stoichiometric films can only be obtained in the compound sputtering mode, 80,81 unless a feedback system for controlling the target coverage is used.…”

Section: F Reactive Hipimsmentioning

confidence: 99%

See 4 more Smart Citations

An introduction to thin film processing using high-power impulse magnetron sputtering

2012

View full text Add to dashboard Cite

High-power impulse magnetron sputtering (HiPIMS) is a promising sputtering-based ionized physical vapor deposition technique and is already making its way to industrial applications. The major difference between HiPIMS and conventional magnetron sputtering processes is the mode of operation. In HiPIMS the power is applied to the magnetron (target) in unipolar pulses at a low duty factor (andlt;10%) and low frequency (andlt;10 kHz) leading to peak target power densities of the order of several kilowatts per square centimeter while keeping the average target power density low enough to avoid magnetron overheating and target melting. These conditions result in the generation of a highly dense plasma discharge, where a large fraction of the sputtered material is ionized and thereby providing new and added means for the synthesis of tailor-made thin films. In this review, the features distinguishing HiPIMS from other deposition methods will be addressed in detail along with how they influence the deposition conditions, such as the plasma parameters and the sputtered material, as well as the resulting thin film properties, such as microstructure, phase formation, and chemical composition. General trends will be established in conjunction to industrially relevant material systems to present this emerging technology to the interested reader.Funding Agencies|Swedish Research Council (VR)|623-2009-7348

show abstract

Section: F Reactive Hipimsmentioning

confidence: 99%