Fundamental Study of InP-Based Open-Gate Field-Effect Transistors for Application to Liquid-Phase Chemical Sensors

Yoshizawa, Naoki; Sato, Taketomo; Hashizume, Tamotsu

doi:10.1143/jjap.48.091102

Cited by 4 publications

(2 citation statements)

References 18 publications

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“…We have recently reported that InP-based ionsensitive field effect transistors showed a stable operation of a liquid-phase pH sensor in diluted HCl, H 3 PO 4 , and NaOH electrolytes in a pH range from 3.0 to 12.0. 34 This covers the optimum pH range for various enzymatic reactions, such as lipase ͑pH 4.0-5.0͒, amylase ͑pH 6.7-7.0͒, and trypsin ͑pH 7.8-8.7͒. 35 From our present results described here, we consider that InP porous electrodes functionalized by electrodeposition have considerable potential for practical application to various amperometric biochemical sensors.…”

Section: Resultsmentioning

confidence: 78%

Electrochemical Functionalization of InP Porous Nanostructures with a GOD Membrane for Amperometric Glucose Sensors

Sato

Mizohata

Hashizume

2010

J. Electrochem. Soc.

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The electrochemical functionalization of n-type InP porous nanostructures and their feasibility for biochemical sensor applications were investigated. The porous structures have extremely large surface areas, i.e., over 10 m 2 /cm 3 , and superior electrical properties with conductive semiconductor substrates. As a first attempt at electrochemical functionalization, we successfully deposited a glucose oxidase ͑GOD͒ membrane onto an InP surface under an applied anodic bias of 1.2 V. With the addition of glucose, the response currents on the porous electrodes increased compared to those on planar InP electrodes due to their enlarged surface area. The sensitivity curves of the porous electrodes we used showed good linearity between the response currents and concentrations in a range from 0 to 5 mM.

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Section: Resultsmentioning

confidence: 78%

Electrochemical Functionalization of InP Porous Nanostructures with a GOD Membrane for Amperometric Glucose Sensors

Sato

Mizohata

Hashizume

2010

J. Electrochem. Soc.

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“…Several research groups working with ISE or ISM-FET have demonstrated sensors with near ideal Nernstian response and researched on techniques to improve the sensitivity to reach the ideal Nernst slope. [22][23][24][25][26][27] Most of them rely on the site binding theory which states that increasing the surface porosity or roughness of ISM, whereby increasing the number of available sites for heavy metal ion binding, will enhance the sensitivity. However, the maximum allowed sensitivity is still limited by the ideal Nernst response.…”

Section: Sensing Characteristics Of Hg-ishemtmentioning

confidence: 99%

Beyond the Limit of Ideal Nernst Sensitivity: Ultra-High Sensitivity of Heavy Metal Ion Detection with Ion-Selective High Electron Mobility Transistors

Chen

Hseih

Sarangadharan

et al. 2018

ECS J. Solid State Sci. Technol.

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Exposure to heavy metal ions poses grave danger to public health and reliable and affordable water quality monitoring system that can rapidly screen for heavy metal ion contamination is necessary. In this research, we have developed a unique sensing methodology to detect heavy metal ions such as Pb 2+ and Hg 2+ in water sources, using ion-selective high electron mobility transistor sensor (ISHEMT). A detailed investigation of the sensing and selectivity characteristics of ISHEMT is carried out and a theoretical model is proposed for the illustration of the enhanced sensitivity and selectivity. The high field modulated ISHEMT sensor displays very high sensitivity, much beyond the ideal Nernstian slope, offering very low detection limit (10 −10 M for Pb 2+ and 10 −11 M for Hg 2+ ). The sensing characteristics are not affected by the presence of interfering ions and the selective sensor response has been validated using fixed interference and separate solution methods. These sensor characteristics are superior than the traditional ISE or ISFET sensors, and at par with laboratory standard technologies like ICP-MS. The miniaturized, inexpensive and user-friendly sensor technology can provide consumers with an affordable and convenient means of securing safe and contamination free water and food consumption.

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High-field modulated ion-selective field-effect-transistor (FET) sensors with sensitivity higher than the ideal Nernst sensitivity

Chen¹,

Sarangadharan²,

Sukesan³

et al. 2018

Sci Rep

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Lead ion selective membrane (Pb-ISM) coated AlGaN/GaN high electron mobility transistors (HEMT) was used to demonstrate a whole new methodology for ion-selective FET sensors, which can create ultra-high sensitivity (−36 mV/log [Pb2+]) surpassing the limit of ideal sensitivity (−29.58 mV/log [Pb2+]) in a typical Nernst equation for lead ion. The largely improved sensitivity has tremendously reduced the detection limit (10−10 M) for several orders of magnitude of lead ion concentration compared to typical ion-selective electrode (ISE) (10−7 M). The high sensitivity was obtained by creating a strong filed between the gate electrode and the HEMT channel. Systematical investigation was done by measuring different design of the sensor and gate bias, indicating ultra-high sensitivity and ultra-low detection limit obtained only in sufficiently strong field. Theoretical study in the sensitivity consistently agrees with the experimental finding and predicts the maximum and minimum sensitivity. The detection limit of our sensor is comparable to that of Inductively-Coupled-Plasma Mass Spectrum (ICP-MS), which also has detection limit near 10−10 M.

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Fundamental Study of InP-Based Open-Gate Field-Effect Transistors for Application to Liquid-Phase Chemical Sensors

Cited by 4 publications

References 18 publications

Electrochemical Functionalization of InP Porous Nanostructures with a GOD Membrane for Amperometric Glucose Sensors

Electrochemical Functionalization of InP Porous Nanostructures with a GOD Membrane for Amperometric Glucose Sensors

Beyond the Limit of Ideal Nernst Sensitivity: Ultra-High Sensitivity of Heavy Metal Ion Detection with Ion-Selective High Electron Mobility Transistors

High-field modulated ion-selective field-effect-transistor (FET) sensors with sensitivity higher than the ideal Nernst sensitivity

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