Fundamental studies of ZnO nanowires with ZnCdO/ZnO multiple quantum wells grown for tunable light emitters

Pietrzyk, M.A.; Wierzbicka, Aleksandra; Zielony, E.; Pieniążek, A.; Szymon, R.; Płaczek‐Popko, E.

doi:10.1016/j.sna.2020.112305

Cited by 8 publications

(6 citation statements)

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“…Unfortunately, CdO has a low solubility of ∼2 at.% at thermodynamic equilibrium in ZnO. 7 Until now, ZnCdO synthesis has been tested by a variety of growth methods, including metal organic vaporphase epitaxy, 8 molecular beam epitaxy (MBE), 9,10 sol−gel method, 11 and reactive radio-frequency magnetron sputtering, 12 confirming the difficulties in obtaining its single phase. 8 Incorporation of Cd into ZnO is very useful for the fabrication of ZnO/Zn 1−x Cd x O heterostructures, which are key elements in ZnO-based light emitters and detectors.…”

Section: ■ Introductionmentioning

confidence: 99%

“…8 Incorporation of Cd into ZnO is very useful for the fabrication of ZnO/Zn 1−x Cd x O heterostructures, which are key elements in ZnO-based light emitters and detectors. 10,11,13 The structural mismatch between the endpoint compounds, wurtzite (WZ)−ZnO and rocksalt (RS)−CdO, gives rise to two separated phase regimes for Cd x Zn 1−x O ternary alloys, each having different optical and electrical properties. 14 WZstructured alloys have a direct optical band gap that can be tuned over the visible range, while high-electron-mobility RS-structured alloys are attractive transparent conductors.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Until now, ZnCdO synthesis has been tested by a variety of growth methods, including metal organic vapor-phase epitaxy, molecular beam epitaxy (MBE), , sol–gel method, and reactive radio-frequency magnetron sputtering, confirming the difficulties in obtaining its single phase . Incorporation of Cd into ZnO is very useful for the fabrication of ZnO/Zn 1– x Cd x O heterostructures, which are key elements in ZnO-based light emitters and detectors. ,, The structural mismatch between the endpoint compounds, wurtzite (WZ)–ZnO and rocksalt (RS)–CdO, gives rise to two separated phase regimes for Cd x Zn 1– x O ternary alloys, each having different optical and electrical properties . WZ-structured alloys have a direct optical band gap that can be tuned over the visible range, while high-electron-mobility RS-structured alloys are attractive transparent conductors .…”

Section: Introductionmentioning

confidence: 99%

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Nanoscale Morphology of Short-Period {CdO/ZnO} Superlattices Grown by MBE

Przeździecka

Wierzbicka

Lysak

et al. 2021

Crystal Growth & Design

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The nanoscale morphology of short-period {CdO/ZnO} n superlattices (SLs) grown by plasma-assisted molecular beam epitaxy on m-oriented sapphire substrates is studied. The SL structures consist of 25 repetitions of subsequently deposited ZnO and CdO layers. X-ray diffraction (XRD) and transmission electron microcopy (TEM) studies confirm the presence of 2D SL structures with the wurtzite phase of ZnO sublayers and the rocksalt structure of CdO sublayers. For thicker ZnO sublayers, the (11̅.3) twinning was observed. The SL periods are calculated based on high-resolution XRD and TEM analyses. By varying the thickness of the CdO and ZnO sublayers, it is possible to control the energy gap in these quasi-alloys. These results suggest the promising potential of their optical properties for light emission and/or applications in the detection of visible to ultra-violet light.

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Section: ■ Introductionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Nanoscale Morphology of Short-Period {CdO/ZnO} Superlattices Grown by MBE

Przeździecka

Wierzbicka

Lysak

et al. 2021

Crystal Growth & Design

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“…Multiple research projects and the discovery of new applications for materials based on ZnO made this semiconductor the focus of important high-technology advances, such as optoelectronic devices, particularly those based on ZnO nanostructured for light emitters [2,3]. ZnO thin film transistors under ultraviolet irradiation [4], broad band photo-absorption architectures from UV-IR [5], gas sensors [6], acoustic wave devices, solar cells, transparent electronic and flat panel displays [7][8][9], and photo-catalytic applications [10] etc.…”

Section: Introductionmentioning

confidence: 99%

ZnOTe Compounds Grown by DC-Magnetron Co-Sputtering

Sánchez

Hernández‐Vélez

2021

Coatings

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ZnOTe compounds were grown by DC magnetron cosputtering from pure Tellurium (Te) and Zinc (Zn) cathodes in O2/Ar atmosphere. The applied power on the Zn target was constant equal to 100 W, while the one applied on the Te target took two values, i.e., 5 W and 10 W. Thus, two sample series were obtained in which the variable parameter was the distance from the Te targets to the substrate. Sample compositions were determined by Rutherford Backscattering Spectroscopy (RBS) experiments. Structural analysis was done using X-Ray diffraction (XRD) spectrometry and the growth of the hexagonal w-ZnO phase was identified in the XRD spectra. RBS results showed high bulk homogeneity of the samples forming ZnOTe alloys, with variable Te molar fraction (MF) ranging from 0.48–0.6% and from 1.9–3.1% for the sample series obtained at 5 W and 10 W, respectively. The results reflect great differences between the two sample series, particularly from the structural and optical point of view. These experiments point to the possibility of Te doping ZnO with the permanence of intrinsic defects, as well as the possibility of the formation of other Te solid phases when its content increases. The results and appreciable variations in the band gap transitions were detected from Photoluminescence (PL) measurements.

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“…Nowadays, ZnO and ZnO-based materials are recognized in a wide spectrum of applications, which makes them unique materials because of the combination of multiple functional properties including electronics and human healthcare. Multiple research projects and the discovery of new applications for materials based on ZnO made this semiconductor the focus of important high-technology advances, such as optoelectronic devices, particularly those based on ZnO nanostructured for light emitters [2,3], ZnO thin-film transistors under ultraviolet irradiation [4], broadband photo-absorption architectures from UV-IR [5], gas sensors [6], acoustic wave devices, solar cells, transparent electronic and flat panel displays [7][8][9], photocatalytic applications [10], etc. However, the large range of industrial uses is strongly dependent on the experimental technique, parameters, preparation, posttreatment of the grown samples, etc.…”

Section: Introductionmentioning

confidence: 99%