Fundamental relationship between the Herring and Cantrell-Butcher formulas for the phonon-drag thermopower of two-dimensional electron and hole gases

Tsaousidou, M.; Butcher, P N; Triberis, G. P.

doi:10.1103/physrevb.64.165304

Cited by 36 publications

(39 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…(2) whereÃ(q) includes the deformation potential and the piezoelectric contributions 39 , and ψ n (z) is the wavefunction of the 2D-confined electrons, whose Fouriertransform F n governs the coupling of 3D phonons with the electrons confined along z within a slice of thickness t. In the t → ∞ limit F n →δ qz,0 i.e. only zero-wavelength phonons can couple with electrons, and the coupling amplitude goes back to the 3D case, where q is fully determined by the crystal momentum conservation k'=k+q; in case of infinite confinement (t=0), on the other hand, all q z up to the Debye wavelength do contribute to the coupling, and F n =1.…”

Section: Phonon-drag Modelingmentioning

confidence: 99%

“…To shed light into the phonon-drag mechanism at the fundamental level, we used the theory first developed by Bailyn 53 and then adapted to 2DES systems by Cantrell and Butcher [39][40][41][54][55][56] , based on the Boltzmann Transport Equation (BTE) 57 for coupled electrons and phonons. To make calculation affordable, we describe the 2DES electronic structure by an anisotropic effective mass modeling (previously used for a series of oxides 33,[58][59][60][61] ) and the acoustic phonon frequencies by a simple linear dispersion.…”

Section: Phonon-drag Modelingmentioning

confidence: 99%

See 1 more Smart Citation

Large phonon-drag enhancement induced by narrow quantum confinement at theLaAlO3/SrTiO3interface

et al. 2016

View full text Add to dashboard Cite

The thermoelectric power of the two-dimensional electron system (2DES) at the LaAlO3/SrTiO3 interface is explored below room temperature, in comparison with that of Nb-doped SrTiO3 single crystals. For the interface we find a region below T =50 K where thermopower is dominated by phonon-drag, whose amplitude is hugely amplified with respect to the corresponding bulk value, reaching values ∼mV/K and above. The phonon-drag enhancement at the interface is traced back to the tight carrier confinement of the 2DES, and represents a sharp signature of strong electronacoustic phonon coupling at the interface.

show abstract

Section: Phonon-drag Modelingmentioning

confidence: 99%

Section: Phonon-drag Modelingmentioning

confidence: 99%

Large phonon-drag enhancement induced by narrow quantum confinement at theLaAlO3/SrTiO3interface

et al. 2016

View full text Add to dashboard Cite

show abstract

“…The form of the function H i (q, q z ) depends on the crystal symmetry [4]. For zincblende (ZB) symmetry, H l (q, q z ) = (12/35)h 14 2 and H t (q, q z ) = (16/35)h 14…”

Section: Analytical Detailsmentioning

confidence: 99%

Phonon drag thermopower in an AlGaN/GaN heterostructure

Kubakaddi¹

2003

Physica Status Solidi (b)

View full text Add to dashboard Cite

The theoretical thermopower of a two-dimensional electron gas (2DEG) is studied in a clean AlGaN/GaN heterostructure of zincblende (ZB) and wurtzite (WZ) symmetry over the temperature range 0.1-10 K. The phonon drag thermopower (S g ) due to 2DEG coupling with 3D longitudinal and transverse acoustic phonons is calculated for high-density electrons. It is found that, in both ZB and WZ symmetries, the S g due to piezoelectrically coupled transverse acoustic phonons is dominant over the S g due to longitudinal acoustic phonons via piezoelectric and deformation potential coupling over the entire temperature range. This dominance is attributed to the pronounced piezoelectricity of nitrides and the smaller velocity of transverse acoustic phonons. It is shown that the total S g ~ T n with n = 3.8 at temperatures T < 2.0 K and is close to n = 4 in the Bloch-Gruneisen limit. Diffusion thermopower (S d ) is also presented and is found to be significant for T below 0.4 K. The calculations are compared with the results for GaAs/GaAlAs heterostructures.

show abstract

“…In conventional 2DEG, in the BG regime, S g and phonon limited mobility μ p are known to be related by Herring's formula: S g μ p ~T -1 , first given for bulk semiconductors [9,94,103,104]. Since in 2D graphene μ p ~ T -4 [50], Eq.…”

Section: Phonon-drag Thermopower In Slgmentioning

confidence: 99%