Fundamental oscillators based on diamond transistors

Petržela, Jiří; Vyskocil, P.; Prokopec, Jan

doi:10.1109/radioelek.2010.5478555

Cited by 14 publications

(16 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In comparison to the most common semiconductor materials, such as silicon or gallium nitride, their properties are several times better [1]. Currently, diamond devices are used in high power electronics [2], diamond diodes [3], high-power switches [4] or high-frequency devices, such as transistors [5]. However, the most common use of BDD materials is for electrodes in electrochemistry [6][7][8] or spectroelectrochemistry [9].…”

Section: Introductionmentioning

confidence: 99%

Characterization of Optical and Electrical Properties of Transparent Conductive Boron-Doped Diamond thin Films Grown on Fused Silica

Bogdanowicz¹

2014

Metrology and Measurement Systems

View full text Add to dashboard Cite

A conductive boron-doped diamond (BDD) grown on a fused silica/quartz has been investigated. Diamond thin films were deposited by the microwave plasma enhanced chemical vapor deposition (MW PECVD). The main parameters of the BDD synthesis, i.e. the methane admixture and the substrate temperature were investigated in detail. Preliminary studies of optical properties were performed to qualify an optimal CVD synthesis and film parameters for optical sensing applications. The SEM micro-images showed the homogenous, continuous and polycrystalline surface morphology; the mean grain size was within the range of 100-250 nm. The fabricated conductive boron-doped diamond thin films displayed the resistivity below 500 mOhm cm -1 and the transmittance over 50% in the VIS-NIR wavelength range. The studies of optical constants were performed using the spectroscopic ellipsometry for the wavelength range between 260 and 820 nm. A detailed error analysis of the ellipsometric system and optical modelling estimation has been provided. The refractive index values at the 550 nm wavelength were high and varied between 2.24 and 2.35 depending on the percentage content of methane and the temperature of deposition.

show abstract

Section: Introductionmentioning

confidence: 99%

Characterization of Optical and Electrical Properties of Transparent Conductive Boron-Doped Diamond thin Films Grown on Fused Silica

Bogdanowicz¹

2014

Metrology and Measurement Systems

View full text Add to dashboard Cite

show abstract

“…behaves like ideal oscillator without alternating amplitude. It is sufficient to start with blank 2x2 admittance matrix or, as it is in [11], state matrix description can be used. Determinant of state matrix became characteristic equation and allows to clear linear term.…”

Section: Resultsmentioning

confidence: 99%

Systematic design procedure towards reconfigurable first-order filters

Petržela

Šotner

2014

2014 24th International Conference Radioelektronika

Self Cite

View full text Add to dashboard Cite

The motivation of this paper is to show systematic procedure how to design electronically reconfigurable first-order filtering section without change in network topology. It is verified that for different active elements matrix nodal methods can be directly used without any changes in the calculation algorithm. As a consequence this task does not represent problem and can be marked as educational rather than scientific as it is indicated by many today authors in their publications.

show abstract

“…The method of synthesis of second-order sinusoidal oscillators has been dealt extensively in [5,16] and here we restate the important steps. In general, a second-order oscillator can be characterized by means of the following matrix equation…”

Section: Appendix A: Oscillator Synthesis Via State Variable Methodsmentioning

confidence: 99%

“…Both Type1 and Type2 oscillator circuits are reported and another type of CM QO is also described with its governed tuning laws other than Type1 or Type2. It is worth mentioning here that very recently a catalogue of oscillators has been reported using SVA [16] and resistor-less variants of Type2 oscillators have also been described (Fig. 3e).…”

Section: Introductionmentioning

confidence: 98%

Current-mode variable frequency quadrature sinusoidal oscillators using two CCs and four passive components including grounded capacitors

Lahiri¹

2010

Analog Integr Circ Sig Process

View full text Add to dashboard Cite

This paper reports realizations of current-mode quadrature sinusoidal oscillator using only two multipleoutput current conveyors (first or second generation current conveyor CCI/CCII) and four passive components including two grounded capacitors. Therefore, the circuits employ minimum number of passive components to realize a second-order sinusoidal oscillator. Three types of circuits are reported depending on the condition of oscillation and frequency of oscillation (FO). The circuits have FO controllable by either resistor or capacitor and are suitable to be used as variable frequency oscillator for different applications. All the circuits provide two explicit quadrature current outputs from high output impedance terminals. PSPICE simulation results are included to verify the workability of the proposed circuits.

show abstract

Fundamental oscillators based on diamond transistors

Cited by 14 publications

References 2 publications

Characterization of Optical and Electrical Properties of Transparent Conductive Boron-Doped Diamond thin Films Grown on Fused Silica

Characterization of Optical and Electrical Properties of Transparent Conductive Boron-Doped Diamond thin Films Grown on Fused Silica

Systematic design procedure towards reconfigurable first-order filters

Current-mode variable frequency quadrature sinusoidal oscillators using two CCs and four passive components including grounded capacitors

Contact Info

Product

Resources

About