Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature

Suzuki, Safumi; Asada, Masahiro; Teranishi, Atsushi; Sugiyama, Hiroki; Yokoyama, Haruki

doi:10.1063/1.3525834

Cited by 268 publications

(183 citation statements)

References 10 publications

Supporting

Mentioning

176

Contrasting

Unclassified

Order By: Relevance

“…The active tuning of terahertz transmission demonstrated in this work suggests that graphene-based structures are attractive for terahertz modulators and electrically reconfigurable filters and attenuators. Free from lattice-matching often required in epitaxial semiconductor heterostructures, these graphene modulators may be easily integrated with existing solid-state continuous wave (CW) terahertz sources such as quantum cascade lasers 31 and resonant tunnelling diode oscillators 32 , and with terahertz detectors such as Schottky diodes 33 and backward diodes 34 , or future graphenebased terahertz emitters and detectors [3][4][5] . The possibilities of facile integration make graphene modulators promising as singlechip solutions for compact and cost-effective transceivers in the terahertz band.…”

mentioning

confidence: 99%

Broadband graphene terahertz modulators enabled by intraband transitions

et al. 2012

View full text Add to dashboard Cite

Terahertz technology promises myriad applications including imaging, spectroscopy and communications. However, one major bottleneck at present for advancing this field is the lack of efficient devices to manipulate the terahertz electromagnetic waves. Here we demonstrate that exceptionally efficient broadband modulation of terahertz waves at room temperature can be realized using graphene with extremely low intrinsic signal attenuation. We experimentally achieved more than 2.5 times superior modulation than prior broadband intensity modulators, which is also the first demonstrated graphene-based device enabled solely by intraband transitions. The unique advantages of graphene in comparison to conventional semiconductors are the ease of integration and the extraordinary transport properties of holes, which are as good as those of electrons owing to the symmetric conical band structure of graphene. Given recent progress in graphene-based terahertz emitters and detectors, graphene may offer some interesting solutions for terahertz technologies.

show abstract

mentioning

confidence: 99%

Broadband graphene terahertz modulators enabled by intraband transitions

et al. 2012

View full text Add to dashboard Cite

show abstract

“…[3][4][5] Several types of continuous-wave THz emitters have also been studied and developed using semiconductor technologies. For example, quantum cascade lasers (QCLs), [6][7][8] resonant tunneling diodes (RTDs), 9,10) and photomixers 11,12) have been reported so far. Recently, intracavity difference-frequency generation (DFG) in dual-wavelength mid-infrared QCLs has been demonstrated as a THz source.…”

Section: Introductionmentioning

confidence: 99%

Room-temperature two-color lasing by current injection into a GaAs/AlGaAs coupled multilayer cavity fabricated by wafer bonding

Kitada

Minami

et al. 2018

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Room-temperature two-color lasing was demonstrated by current injection into a GaAs/AlGaAs coupled multilayer cavity for terahertz emitting devices utilizing its difference-frequency generation (DFG) inside the structure. We prepared two epitaxial wafers with (001) and (113)B orientations and they were directly bonded to form the coupled multilayer cavity. The (001) side cavity contains two types of InGaAs multiple quantum wells to realize optical gain for two-color lasing while a single GaAs layer of the (113)B side cavity is a nonlinear medium for efficient DFG. Lasing behavior was clearly observed for two modes under pulsed current conditions at room temperature. We found that the intensity relation between two-color lasings was dependent on the pulse duration because of the different temporal profiles of emission intensity. Simultaneous twocolor lasing in the device was also confirmed by measuring the sum-frequency generation signal using a beta barium borate crystal.

show abstract

“…Recently, RTD oscillators working in the THz-regime have been experimentally realized at room temperature by coupling RTDs with external circuit elements such as slot-antennas [8][9][10][11] . However, these experimental systems have low output power, typically in the micro-watt range [8][9][10][11] , because the oscillations are induced by exchanging energy with external circuit elements 12 .…”

Section: Introductionmentioning

confidence: 99%

Coulomb-driven terahertz-frequency intrinsic current oscillations in a double-barrier tunneling structure

Jonasson

Knežević

2014

Phys. Rev. B

View full text Add to dashboard Cite

We investigate time-dependent, room-temperature quantum electronic transport in GaAs/AlGaAs double-barrier tunneling structures (DBTSs). The open-boundary Wigner-Boltzmann transport equation is solved by the stochastic ensemble Monte Carlo technique, coupled with Poisson's equation and including electron scattering with phonons and ionized dopants. We observe well-resolved and persistent THz-frequency current density oscillations in uniformly-doped, dc-biased DBTSs at room temperature. We show that the origin of these intrinsic current oscillations is not consistent with previously proposed models, which predicted an oscillation frequency given by the average energy difference between the quasi-bound states localized in the emitter and main quantum wells. Instead, the current oscillations are driven by the long-range Coulomb interactions, with the oscillation frequency determined by the ratio of the charges stored in the emitter and main quantum wells. We discuss the tunability of the frequency by varying the doping density and profile.

show abstract

Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature

Cited by 268 publications

References 10 publications

Broadband graphene terahertz modulators enabled by intraband transitions

Broadband graphene terahertz modulators enabled by intraband transitions

Room-temperature two-color lasing by current injection into a GaAs/AlGaAs coupled multilayer cavity fabricated by wafer bonding

Coulomb-driven terahertz-frequency intrinsic current oscillations in a double-barrier tunneling structure

Contact Info

Product

Resources

About